Jun-Cheng Ko

Person

Taichung, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned contact process implementing bias compensation etch en...
- Patent number 6,861,362
- Issue date Mar 1, 2005
- Lam Research Corporation
- Jun-Cheng Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure using taper contact etching and polycide step
- Patent number 6,211,557
- Issue date Apr 3, 2001
- Vanguard International Semiconductor Corporation
- Jun-Cheng Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
UV resist curing as an indirect means to increase SiN corner select...
- Patent number 6,069,077
- Issue date May 30, 2000
- Vanguard International Semiconductor Corporation
- Daniel Hao-Tien Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact process using taper contact etching and polycide step
- Patent number 5,915,198
- Issue date Jun 22, 1999
- Vanguard International Semiconductor Corporation
- Jun-Cheng Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized dry etching procedure, using an oxygen containing ambient...
- Patent number 5,854,135
- Issue date Dec 29, 1998
- Vanguard International Semiconductor Corporation
- Jun-Cheng Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step plasma etch method for forming self aligned contact
- Patent number 5,817,579
- Issue date Oct 6, 1998
- Vanguard International Semiconductor Corporation
- Jun-Cheng Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming single sin layer as passivation film
- Patent number 5,788,767
- Issue date Aug 4, 1998
- Vanguard International Semiconductor Corporation
- Jun-Cheng Ko
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-aligned contact process implementing bias compensation etch en...
- Publication number 20050130334
- Publication date Jun 16, 2005
- LAM RESEARCH CORPORATION
- Jun-Cheng Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned contact process implementing bias compensation etch en...
- Publication number 20030000923
- Publication date Jan 2, 2003
- Jun-Cheng Ko
- H01 - BASIC ELECTRIC ELEMENTS

Jun-Cheng Ko

Person

Patents Grantslast 30 patents

Self-aligned contact process implementing bias compensation etch en...

Contact structure using taper contact etching and polycide step

UV resist curing as an indirect means to increase SiN corner select...

Contact process using taper contact etching and polycide step

Optimized dry etching procedure, using an oxygen containing ambient...

Two step plasma etch method for forming self aligned contact

Method for forming single sin layer as passivation film

Patents Applicationslast 30 patents

Self-aligned contact process implementing bias compensation etch en...

Self-aligned contact process implementing bias compensation etch en...