Jun Hu

Person

San Bruno, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of manufacture of termination for vertical trench shielded...
- Patent number 11,482,601
- Issue date Oct 25, 2022
- Vishay SIliconix, LLC
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination designs for super junction device
- Patent number 11,222,962
- Issue date Jan 11, 2022
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate trench IGBT with buried floating P-type shield
- Patent number 10,998,264
- Issue date May 4, 2021
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for vertical trench shielded devices
- Patent number 10,950,699
- Issue date Mar 16, 2021
- Vishay SIliconix, LLC
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT MOSFET with adjustable CRSS and CISS
- Patent number 10,923,588
- Issue date Feb 16, 2021
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top structure of super junction MOSFETs and methods of fabrication
- Patent number 10,896,959
- Issue date Jan 19, 2021
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate trench IGBT with buried floating P-type shield
- Patent number 10,804,355
- Issue date Oct 13, 2020
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of trench MOSFET devices
- Patent number 10,622,445
- Issue date Apr 14, 2020
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate trench IGBT with buried floating P-type shield
- Patent number 10,199,455
- Issue date Feb 5, 2019
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT MOSFET with adjustable CRSS and CISS
- Patent number 10,038,089
- Issue date Jul 31, 2018
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO., Ltd
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 9,865,678
- Issue date Jan 9, 2018
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench-gate IGBT structure
- Patent number 9,711,631
- Issue date Jul 18, 2017
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate trench IGBT with buried floating P-type shield
- Patent number 9,666,666
- Issue date May 30, 2017
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Injection control in semiconductor power devices
- Patent number 9,620,630
- Issue date Apr 11, 2017
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge reservoir IGBT top structure
- Patent number 9,502,547
- Issue date Nov 22, 2016
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 9,450,083
- Issue date Sep 20, 2016
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Injection control in semiconductor power devices
- Patent number 9,318,587
- Issue date Apr 19, 2016
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench-gate IGBT structure
- Patent number 9,293,559
- Issue date Mar 22, 2016
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 9,129,822
- Issue date Sep 8, 2015
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge reservoir IGBT top structure
- Patent number 9,123,770
- Issue date Sep 1, 2015
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate trench IGBT with buried floating P-type shield
- Patent number 9,048,282
- Issue date Jun 2, 2015
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low capacitance transient voltage suppressor (TVS) with reduced cla...
- Patent number 9,000,481
- Issue date Apr 7, 2015
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage fast recovery trench diode
- Patent number 8,907,414
- Issue date Dec 9, 2014
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode scheme for improved device switching behavior
- Patent number 8,896,131
- Issue date Nov 25, 2014
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Low capacitance transient voltage suppressor (TVS) with reduced cla...
- Patent number 8,822,300
- Issue date Sep 2, 2014
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 8,785,279
- Issue date Jul 22, 2014
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage fast recovery trench diode
- Patent number 8,710,585
- Issue date Apr 29, 2014
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low capacitance transient voltage suppressor (TVS) with reduced cla...
- Patent number 8,698,196
- Issue date Apr 15, 2014
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried field ring field effect transistor (BUF-FET) integrated with...
- Patent number 8,575,685
- Issue date Nov 5, 2013
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TERMINATION STRUCTURE
- Publication number 20240030339
- Publication date Jan 25, 2024
- Siliconix Incorporated
- AYMAN SHIBIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURE OF TERMINATION FOR VERTICAL TRENCH SHIELDED...
- Publication number 20210210607
- Publication date Jul 8, 2021
- Siliconix Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION FOR VERTICAL TRENCH SHIELDED DEVICES
- Publication number 20210043741
- Publication date Feb 11, 2021
- Siliconix Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD
- Publication number 20210020567
- Publication date Jan 21, 2021
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP STRUCTURE OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH IMPR...
- Publication number 20190334019
- Publication date Oct 31, 2019
- Hunteck Semiconductor (Shanghai) Co.,Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Top Structure of Super Junction MOSFETS and Methods of Fabrication
- Publication number 20190221644
- Publication date Jul 18, 2019
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION DESIGNS FOR SEMICONDUCTOR POWER DEVICES
- Publication number 20190206986
- Publication date Jul 4, 2019
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD
- Publication number 20190157384
- Publication date May 23, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF TRENCH MOSFET DEVICES
- Publication number 20190067469
- Publication date Feb 28, 2019
- Hunteck Semiconductor (Shanghai) Co.,Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SGT MOSFET WITH ADJUSTABLE CRSS AND CISS
- Publication number 20190027596
- Publication date Jan 24, 2019
- Hunteck Semiconductor (Shanghai) Co.,Ltd.
- Jun HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION DESIGNS FOR SUPER JUNCTION DEVICE
- Publication number 20170338301
- Publication date Nov 23, 2017
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD
- Publication number 20170271441
- Publication date Sep 21, 2017
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SGT MOSFET WITH ADJUSTABLE CRSS AND CISS
- Publication number 20170162689
- Publication date Jun 8, 2017
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
- Publication number 20160351659
- Publication date Dec 1, 2016
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD
- Publication number 20160336394
- Publication date Nov 17, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL TRENCH-GATE IGBT STRUCTURE
- Publication number 20160268404
- Publication date Sep 15, 2016
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INJECTION CONTROL IN SEMICONDUCTOR POWER DEVICES
- Publication number 20160197169
- Publication date Jul 7, 2016
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
- Publication number 20150372129
- Publication date Dec 24, 2015
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE RESERVOIR IGBT TOP STRUCTURE
- Publication number 20150357450
- Publication date Dec 10, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INJECTION CONTROL IN SEMICONDUCTOR POWER DEVICES
- Publication number 20150349101
- Publication date Dec 3, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE RESERVOIR IGBT TOP STRUCTURE
- Publication number 20150137175
- Publication date May 21, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL TRENCH-GATE IGBT STRUCTURE
- Publication number 20150035003
- Publication date Feb 5, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLA...
- Publication number 20140363946
- Publication date Dec 11, 2014
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
- Publication number 20140319604
- Publication date Oct 30, 2014
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD
- Publication number 20140264433
- Publication date Sep 18, 2014
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FAST RECOVERY TRENCH DIODE
- Publication number 20140239436
- Publication date Aug 28, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLA...
- Publication number 20140134825
- Publication date May 15, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
- Publication number 20140027841
- Publication date Jan 30, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried field ring field effect transistor (BUF-FET) integrated with...
- Publication number 20130049102
- Publication date Feb 28, 2013
- Alpha and Omega Semiconductor, Inc.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLA...
- Publication number 20130001694
- Publication date Jan 3, 2013
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods of manufacture of termination for vertical trench shielded...

Edge termination designs for super junction device

Dual-gate trench IGBT with buried floating P-type shield

Termination for vertical trench shielded devices

SGT MOSFET with adjustable CRSS and CISS

Top structure of super junction MOSFETs and methods of fabrication

Dual-gate trench IGBT with buried floating P-type shield

Epitaxial structure of trench MOSFET devices

Dual-gate trench IGBT with buried floating P-type shield

SGT MOSFET with adjustable CRSS and CISS

High voltage field balance metal oxide field effect transistor (FBM)

Dual trench-gate IGBT structure

Dual-gate trench IGBT with buried floating P-type shield

Injection control in semiconductor power devices

Charge reservoir IGBT top structure

High voltage field balance metal oxide field effect transistor (FBM)

Injection control in semiconductor power devices

Dual trench-gate IGBT structure

High voltage field balance metal oxide field effect transistor (FBM)

Charge reservoir IGBT top structure

Dual-gate trench IGBT with buried floating P-type shield

Low capacitance transient voltage suppressor (TVS) with reduced cla...

High voltage fast recovery trench diode

Cascode scheme for improved device switching behavior

Low capacitance transient voltage suppressor (TVS) with reduced cla...

High voltage field balance metal oxide field effect transistor (FBM)

High voltage fast recovery trench diode

Low capacitance transient voltage suppressor (TVS) with reduced cla...

Buried field ring field effect transistor (BUF-FET) integrated with...

Patents Applicationslast 30 patents

TERMINATION STRUCTURE

METHODS OF MANUFACTURE OF TERMINATION FOR VERTICAL TRENCH SHIELDED...

TERMINATION FOR VERTICAL TRENCH SHIELDED DEVICES

NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD

TOP STRUCTURE OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH IMPR...

Top Structure of Super Junction MOSFETS and Methods of Fabrication

EDGE TERMINATION DESIGNS FOR SEMICONDUCTOR POWER DEVICES

NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD

EPITAXIAL STRUCTURE OF TRENCH MOSFET DEVICES

SGT MOSFET WITH ADJUSTABLE CRSS AND CISS

EDGE TERMINATION DESIGNS FOR SUPER JUNCTION DEVICE

DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD

SGT MOSFET WITH ADJUSTABLE CRSS AND CISS

HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD

DUAL TRENCH-GATE IGBT STRUCTURE

INJECTION CONTROL IN SEMICONDUCTOR POWER DEVICES

HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

CHARGE RESERVOIR IGBT TOP STRUCTURE

INJECTION CONTROL IN SEMICONDUCTOR POWER DEVICES

CHARGE RESERVOIR IGBT TOP STRUCTURE

DUAL TRENCH-GATE IGBT STRUCTURE

LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLA...

HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD

HIGH VOLTAGE FAST RECOVERY TRENCH DIODE

LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLA...

HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

Buried field ring field effect transistor (BUF-FET) integrated with...

LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED CLA...