Jun-Nan Nian

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,080,751
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Han Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling electrochemical deposition to avoid defects...
- Patent number 11,603,602
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Electrochemical plating system and method of using
- Patent number 11,598,016
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Electrochemical plating system and method of using
- Patent number 11,230,784
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
N-work function metal with crystal structure
- Patent number 11,133,395
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling electrochemical deposition to avoid defects...
- Patent number 11,015,260
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method of electroplating metal into recessed feature and electropla...
- Patent number 10,879,629
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Formation of copper layer structure with self anneal strain improve...
- Patent number 10,840,184
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method of electroplating metal into recessed feature and electropla...
- Patent number 10,749,278
- Issue date Aug 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
N-work function metal with crystal structure
- Patent number 10,269,918
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of copper layer structure with self anneal strain improve...
- Patent number 9,870,995
- Issue date Jan 16, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jun-Nan Nian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-work function metal with crystal structure
- Patent number 9,698,019
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor cross-talk reduction system and method
- Patent number 8,759,928
- Issue date Jun 24, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chieh Chang
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device and method of formation
- Patent number 8,642,439
- Issue date Feb 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan Nian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HfO2/SiO2-Si interface improvement for CMOS image sensor
- Patent number 8,610,230
- Issue date Dec 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan Nian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of formation
- Patent number 8,435,893
- Issue date May 7, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan Nian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR ELECTROCHEMICAL PLATING APPARATUS AND METHOD
- Publication number 20240392463
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan Nian
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
METHOD AND APPARATUS FOR COPPER PLATING IN SEMICONDUCTOR DEVICES
- Publication number 20240387379
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan NIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240371919
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Han LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE INCLUDING A BUFFER LAYER AND METHODS OF FORMATION
- Publication number 20240355870
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan NIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR MONITORING CHEMICAL MECHANICAL POLISHING
- Publication number 20240051085
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan NIAN
- B24 - GRINDING POLISHING
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230402320
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- JUN-NAN NIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230369386
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Han LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE STRUCTURES AND METHODS OF FABRICATION THEREOF
- Publication number 20230215802
- Publication date Jul 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan NIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...
- Publication number 20230207381
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan NIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROCHEMICAL PLATING SYSTEM AND METHOD OF USING
- Publication number 20220042197
- Publication date Feb 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD FOR CONTROLLING ELECTROCHEMICAL DEPOSITION TO AVOID DEFECTS...
- Publication number 20210238765
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-Nan NIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROCHEMICAL PLATING SYSTEM AND METHOD OF USING
- Publication number 20200173051
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD FOR CONTROLLING ELECTROCHEMICAL DEPOSITION TO AVOID DEFECTS...
- Publication number 20200176310
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-Nan Nian
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
N-work Function Metal with Crystal Structure
- Publication number 20190252512
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ELECTROPLATING METAL INTO RECESSED FEATURE AND ELECTROPLA...
- Publication number 20190109389
- Publication date Apr 11, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Jun-Nan NIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF COPPER LAYER STRUCTURE WITH SELF ANNEAL STRAIN IMPROVE...
- Publication number 20180138128
- Publication date May 17, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-Nan NIAN
- B32 - LAYERED PRODUCTS
Information Patent Application
N-Work Function Metal with Crystal Structure
- Publication number 20170301768
- Publication date Oct 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ELECTROPLATING METAL INTO RECESSED FEATURE AND ELECTROPLA...
- Publication number 20170204529
- Publication date Jul 20, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-Nan NIAN
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
FORMATION OF COPPER LAYER STRUCTURE WITH SELF ANNEAL STRAIN IMPROVE...
- Publication number 20160372421
- Publication date Dec 22, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-Nan NIAN
- B32 - LAYERED PRODUCTS
Information Patent Application
N-WORK FUNCTION METAL WITH CRYSTAL STRUCTURE
- Publication number 20150262822
- Publication date Sep 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Formation
- Publication number 20130264615
- Publication date Oct 10, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan Nian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Image Sensor Cross-Talk Reduction System and Method
- Publication number 20130264668
- Publication date Oct 10, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chieh Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Formation
- Publication number 20130126950
- Publication date May 23, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Nan Nian
- H01 - BASIC ELECTRIC ELEMENTS

Jun-Nan Nian

Person

Patents Grantslast 30 patents

Semiconductor device structure and methods of forming the same

Method for controlling electrochemical deposition to avoid defects...

Electrochemical plating system and method of using

Electrochemical plating system and method of using

N-work function metal with crystal structure

Method for controlling electrochemical deposition to avoid defects...

Method of electroplating metal into recessed feature and electropla...

Formation of copper layer structure with self anneal strain improve...

Method of electroplating metal into recessed feature and electropla...

N-work function metal with crystal structure

Formation of copper layer structure with self anneal strain improve...

N-work function metal with crystal structure

Image sensor cross-talk reduction system and method

Semiconductor device and method of formation

HfO2/SiO2-Si interface improvement for CMOS image sensor

Semiconductor device and method of formation

Patents Applicationslast 30 patents

SEMICONDUCTOR ELECTROCHEMICAL PLATING APPARATUS AND METHOD

METHOD AND APPARATUS FOR COPPER PLATING IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

CAPACITOR STRUCTURE INCLUDING A BUFFER LAYER AND METHODS OF FORMATION

APPARATUS AND METHOD FOR MONITORING CHEMICAL MECHANICAL POLISHING

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

CONDUCTIVE STRUCTURES AND METHODS OF FABRICATION THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEV...

ELECTROCHEMICAL PLATING SYSTEM AND METHOD OF USING

METHOD FOR CONTROLLING ELECTROCHEMICAL DEPOSITION TO AVOID DEFECTS...

ELECTROCHEMICAL PLATING SYSTEM AND METHOD OF USING

METHOD FOR CONTROLLING ELECTROCHEMICAL DEPOSITION TO AVOID DEFECTS...

N-work Function Metal with Crystal Structure

METHOD OF ELECTROPLATING METAL INTO RECESSED FEATURE AND ELECTROPLA...

FORMATION OF COPPER LAYER STRUCTURE WITH SELF ANNEAL STRAIN IMPROVE...

N-Work Function Metal with Crystal Structure

METHOD OF ELECTROPLATING METAL INTO RECESSED FEATURE AND ELECTROPLA...

FORMATION OF COPPER LAYER STRUCTURE WITH SELF ANNEAL STRAIN IMPROVE...

N-WORK FUNCTION METAL WITH CRYSTAL STRUCTURE

Semiconductor Device and Method of Formation

Image Sensor Cross-Talk Reduction System and Method

Semiconductor Device and Method of Formation