Jun Wan

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Smart early detection of wordline-memory hole defects with wordline...
- Patent number 12,198,769
- Issue date Jan 14, 2025
- SanDisk Technologies LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
3D NAND memory with fast corrective read
- Patent number 12,148,480
- Issue date Nov 19, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable programming voltage step size control during programming o...
- Patent number 12,125,537
- Issue date Oct 22, 2024
- SanDisk Technologies LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for reading memory cells in a memory device during a mul...
- Patent number 12,057,169
- Issue date Aug 6, 2024
- SanDisk Technologies LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-pass programming operation sequence in a memory device
- Patent number 12,046,279
- Issue date Jul 23, 2024
- SanDisk Technologies LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to optimize first read versus second read margin by switchin...
- Patent number 12,046,297
- Issue date Jul 23, 2024
- SanDisk Technologies LLC
- Peng Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with data refresh based on data states of adjac...
- Patent number 11,972,812
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic sense node voltage to compensate for variances when sensing...
- Patent number 11,626,160
- Issue date Apr 11, 2023
- SanDisk Technologies LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced verify scheme during programming based on spacing between v...
- Patent number 11,328,780
- Issue date May 10, 2022
- SanDisk Technologies LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid erase mode for high data retention in memory device
- Patent number 11,127,467
- Issue date Sep 21, 2021
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Command sequence for hybrid erase mode for high data retention in m...
- Patent number 11,120,880
- Issue date Sep 14, 2021
- Western Digital Technologies, Inc.
- Ming Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Mitigating grown bad blocks
- Patent number 10,978,160
- Issue date Apr 13, 2021
- SanDisk Technologies LLC
- Jianzhi Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
System and method for refreshing data in a memory device
- Patent number 10,353,598
- Issue date Jul 16, 2019
- SanDisk Technologies LLC
- Jianmin Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
First read countermeasures in memory
- Patent number 10,229,744
- Issue date Mar 12, 2019
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge storage region in non-volatile memory
- Patent number 10,115,737
- Issue date Oct 30, 2018
- SanDisk Technologies LLC
- Hoon Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
First read countermeasures in memory
- Patent number 10,026,486
- Issue date Jul 17, 2018
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive temperature and memory parameter throttling
- Patent number 10,007,311
- Issue date Jun 26, 2018
- SanDisk Technologies LLC
- Deepak Raghu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Charge storage region in non-volatile memory
- Patent number 9,899,410
- Issue date Feb 20, 2018
- SanDisk Technologies LLC
- Hoon Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On chip dynamic read level scan and error detection for nonvolatile...
- Patent number 9,710,325
- Issue date Jul 18, 2017
- SanDisk Technologies LLC
- Wenzhou Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Open block source bias adjustment for an incompletely programmed bl...
- Patent number 9,564,233
- Issue date Feb 7, 2017
- SanDisk Technologies LLC
- Hoon Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Verification process for non-volatile storage
- Patent number RE46264
- Issue date Jan 3, 2017
- SanDisk Technologies LLC
- Gerrit Jan Hemink
Information Patent Grant
Memory cells using multi-pass programming
- Patent number 9,530,504
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Bo Lei
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for lower page writes
- Patent number 9,355,713
- Issue date May 31, 2016
- SanDisk Technologies Inc.
- Jianmin Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line coupling for deep program-verify, erase-verify and read
- Patent number 9,047,970
- Issue date Jun 2, 2015
- SanDisk Technologies Inc.
- Jun Wan
- G11 - INFORMATION STORAGE
Information Patent Grant
On chip dynamic read level scan and error detection for nonvolatile...
- Patent number 9,036,417
- Issue date May 19, 2015
- SanDisk Technologies Inc.
- Wenzhou Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Built in on-chip data scrambler for non-volatile memory
- Patent number RE45515
- Issue date May 12, 2015
- SanDisk Technologies Inc.
- Jun Wan
- 711 - Electrical computers and digital processing systems: memory
Information Patent Grant
Non-volatile storage with read process that reduces disturb
- Patent number 8,937,835
- Issue date Jan 20, 2015
- SanDisk Technologies Inc.
- Bo Lei
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for lower page writes
- Patent number 8,902,652
- Issue date Dec 2, 2014
- SanDisk Technologies Inc.
- Jianmin Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Block and page level bad bit line and bits screening methods for pr...
- Patent number 8,880,964
- Issue date Nov 4, 2014
- SanDisk Technologies Inc.
- Jun Wan
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory and method with improved data scrambling
- Patent number 8,843,693
- Issue date Sep 23, 2014
- SanDisk Technologies, Inc
- Jonathan Hsu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE
- Publication number 20250014654
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Patrick R. Khayat
- G11 - INFORMATION STORAGE
Information Patent Application
RELIABILITY IMPROVEMENTS USING MEMORY DIE BINNING
- Publication number 20250004647
- Publication date Jan 2, 2025
- Micron Technology, Inc.
- Ying Yu Tai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WORD LINE BASED PROGRAM VOLTAGE ADJUSTMENT
- Publication number 20240420784
- Publication date Dec 19, 2024
- Micron Technology, Inc.
- Murong Lang
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE SENSOR MANAGEMENT DURING ERROR HANDLING OPERATIONS IN A...
- Publication number 20240385926
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Steven Michael Kientz
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAM VERIFY COMPENSATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK
- Publication number 20240185931
- Publication date Jun 6, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME
- Publication number 20240177781
- Publication date May 30, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
FILTERING METRICS ASSOCIATED WITH MEMORY
- Publication number 20240069788
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Dung Viet NGUYEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
3D NAND MEMORY WITH FAST CORRECTIVE READ
- Publication number 20240062832
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD TO OPTIMIZE FIRST READ VERSUS SECOND READ MARGIN BY SWITCHIN...
- Publication number 20230386580
- Publication date Nov 30, 2023
- SANDISK TECHNOLOGIES LLC
- Peng Wang
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR READING MEMORY CELLS IN A MEMORY DEVICE DURING A MUL...
- Publication number 20230377655
- Publication date Nov 23, 2023
- SANDISK TECHNOLOGIES LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-PASS PROGRAMMING OPERATION SEQUENCE IN A MEMORY DEVICE
- Publication number 20230377643
- Publication date Nov 23, 2023
- SANDISK TECHNOLOGIES LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
SMART EARLY DETECTION OF WORDLINE-MEMORY HOLE DEFECTS WITH WORDLINE...
- Publication number 20230368850
- Publication date Nov 16, 2023
- SANDISK TECHNOLOGIES LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH DATA REFRESH
- Publication number 20230187000
- Publication date Jun 15, 2023
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE PROGRAMMING VOLTAGE STEP SIZE CONTROL DURING PROGRAMMING O...
- Publication number 20230124371
- Publication date Apr 20, 2023
- SANDISK TECHNOLOGIES LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC SENSE NODE VOLTAGE TO COMPENSATE FOR VARIANCES WHEN SENSING...
- Publication number 20220246208
- Publication date Aug 4, 2022
- SANDISK TECHNOLOGIES LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mitigating Grown Bad Blocks
- Publication number 20200211652
- Publication date Jul 2, 2020
- SANDISK TECHNOLOGIES LLC
- Jianzhi Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIRST READ COUNTERMEASURES IN MEMORY
- Publication number 20180254090
- Publication date Sep 6, 2018
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE STORAGE REGION IN NON-VOLATILE MEMORY
- Publication number 20180166463
- Publication date Jun 14, 2018
- SanDisk Technologies LLC
- Hoon Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADAPTIVE TEMPERATURE AND MEMORY PARAMETER THROTTLING
- Publication number 20180046231
- Publication date Feb 15, 2018
- SanDisk Technologies LLC
- Deepak Raghu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEM AND METHOD FOR REFRESHING DATA IN A MEMORY DEVICE
- Publication number 20160098216
- Publication date Apr 7, 2016
- SanDisk Technologies, Inc.
- Jianmin Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CELLS USING MULTI-PASS PROGRAMMING
- Publication number 20150371703
- Publication date Dec 24, 2015
- SANDISK TECHNOLOGIES INC.
- Bo Lei
- G11 - INFORMATION STORAGE
Information Patent Application
Systems and Methods for Lower Page Writes
- Publication number 20150332759
- Publication date Nov 19, 2015
- SANDISK TECHNOLOGIES INC.
- Jianmin Huang
- G11 - INFORMATION STORAGE
Information Patent Application
ON CHIP DYNAMIC READ LEVEL SCAN AND ERROR DETECTION FOR NONVOLATILE...
- Publication number 20150212883
- Publication date Jul 30, 2015
- SANDISK TECHNOLOGIES INC.
- Wenzhou Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WORD LINE COUPLING FOR DEEP PROGRAM-VERIFY, ERASE-VERIFY AND READ
- Publication number 20150117114
- Publication date Apr 30, 2015
- SANDISK TECHNOLOGIES INC.
- Jun Wan
- G11 - INFORMATION STORAGE
Information Patent Application
Block And Page Level Bad Bit Line And Bits Screening Methods For Pr...
- Publication number 20140082437
- Publication date Mar 20, 2014
- SANDISK TECHNOLOGIES INC.
- Jun Wan
- G11 - INFORMATION STORAGE
Information Patent Application
ON CHIP DYNAMIC READ LEVEL SCAN AND ERROR DETECTION FOR NONVOLATILE...
- Publication number 20140063940
- Publication date Mar 6, 2014
- SANDISK TECHNOLOGIES INC.
- Wenzhou Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
AGGREGATING DATA LATCHES FOR PROGRAM LEVEL DETERMINATION
- Publication number 20140043897
- Publication date Feb 13, 2014
- Feng Pan
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE WITH READ PROCESS THAT REDUCES DISTURB
- Publication number 20130242661
- Publication date Sep 19, 2013
- SANDISK TECHNOLOGIES INC.
- Bo Lei
- G11 - INFORMATION STORAGE
Information Patent Application
Wordline-to-Wordline Stress Configuration
- Publication number 20130170301
- Publication date Jul 4, 2013
- Mrinal Kochar
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Memory And Method With Improved Data Scrambling
- Publication number 20120297111
- Publication date Nov 22, 2012
- Jonathan Hsu
- G06 - COMPUTING CALCULATING COUNTING

Person

Patents Grantslast 30 patents

Smart early detection of wordline-memory hole defects with wordline...

3D NAND memory with fast corrective read

Variable programming voltage step size control during programming o...

Techniques for reading memory cells in a memory device during a mul...

Multi-pass programming operation sequence in a memory device

Method to optimize first read versus second read margin by switchin...

Non-volatile memory with data refresh based on data states of adjac...

Dynamic sense node voltage to compensate for variances when sensing...

Reduced verify scheme during programming based on spacing between v...

Hybrid erase mode for high data retention in memory device

Command sequence for hybrid erase mode for high data retention in m...

Mitigating grown bad blocks

System and method for refreshing data in a memory device

First read countermeasures in memory

Charge storage region in non-volatile memory

First read countermeasures in memory

Adaptive temperature and memory parameter throttling

Charge storage region in non-volatile memory

On chip dynamic read level scan and error detection for nonvolatile...

Open block source bias adjustment for an incompletely programmed bl...

Verification process for non-volatile storage

Memory cells using multi-pass programming

Systems and methods for lower page writes

Word line coupling for deep program-verify, erase-verify and read

On chip dynamic read level scan and error detection for nonvolatile...

Built in on-chip data scrambler for non-volatile memory

Non-volatile storage with read process that reduces disturb

Systems and methods for lower page writes

Block and page level bad bit line and bits screening methods for pr...

Non-volatile memory and method with improved data scrambling

Patents Applicationslast 30 patents

ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE

RELIABILITY IMPROVEMENTS USING MEMORY DIE BINNING

WORD LINE BASED PROGRAM VOLTAGE ADJUSTMENT

TEMPERATURE SENSOR MANAGEMENT DURING ERROR HANDLING OPERATIONS IN A...

PROGRAM VERIFY COMPENSATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK

READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME

FILTERING METRICS ASSOCIATED WITH MEMORY

3D NAND MEMORY WITH FAST CORRECTIVE READ

METHOD TO OPTIMIZE FIRST READ VERSUS SECOND READ MARGIN BY SWITCHIN...

TECHNIQUES FOR READING MEMORY CELLS IN A MEMORY DEVICE DURING A MUL...

MULTI-PASS PROGRAMMING OPERATION SEQUENCE IN A MEMORY DEVICE

SMART EARLY DETECTION OF WORDLINE-MEMORY HOLE DEFECTS WITH WORDLINE...

NON-VOLATILE MEMORY WITH DATA REFRESH

VARIABLE PROGRAMMING VOLTAGE STEP SIZE CONTROL DURING PROGRAMMING O...

DYNAMIC SENSE NODE VOLTAGE TO COMPENSATE FOR VARIANCES WHEN SENSING...

Mitigating Grown Bad Blocks

FIRST READ COUNTERMEASURES IN MEMORY

CHARGE STORAGE REGION IN NON-VOLATILE MEMORY

ADAPTIVE TEMPERATURE AND MEMORY PARAMETER THROTTLING

SYSTEM AND METHOD FOR REFRESHING DATA IN A MEMORY DEVICE

MEMORY CELLS USING MULTI-PASS PROGRAMMING

Systems and Methods for Lower Page Writes

ON CHIP DYNAMIC READ LEVEL SCAN AND ERROR DETECTION FOR NONVOLATILE...

WORD LINE COUPLING FOR DEEP PROGRAM-VERIFY, ERASE-VERIFY AND READ

Block And Page Level Bad Bit Line And Bits Screening Methods For Pr...

ON CHIP DYNAMIC READ LEVEL SCAN AND ERROR DETECTION FOR NONVOLATILE...

AGGREGATING DATA LATCHES FOR PROGRAM LEVEL DETERMINATION

NON-VOLATILE STORAGE WITH READ PROCESS THAT REDUCES DISTURB

Wordline-to-Wordline Stress Configuration

Non-Volatile Memory And Method With Improved Data Scrambling