Junedong LEE

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating isolated capacitors and structure thereof
- Patent number 8,963,283
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Oh-Jung Kwon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of fabricating isolated capacitors and structure thereof
- Patent number 8,940,617
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Oh-Jung Kwon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of fabricating isolated capacitors and structure thereof
- Patent number 8,716,776
- Issue date May 6, 2014
- International Business Machines Corporation
- Oh-Jung Kwon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon-on-insulator substrate with built-in substrate junction
- Patent number 8,685,806
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating isolated capacitors and structure thereof
- Patent number 8,652,925
- Issue date Feb 18, 2014
- International Business Machines Corporation
- Oh-Jung Kwon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Structure and method for forming isolation and buried plate for tre...
- Patent number 8,637,958
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained ultra-thin SOI transistor formed by replacement gate
- Patent number 8,536,650
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator substrate with built-in substrate junction
- Patent number 8,482,009
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced capacitance deep trench capacitor for EDRAM
- Patent number 8,354,675
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Oh-jung Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for forming isolation and buried plate for tre...
- Patent number 8,298,908
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of SOI with gettering layer
- Patent number 8,128,749
- Issue date Mar 6, 2012
- International Business Machines Corporation
- Junedong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator substrate with a diffusion barrier
- Patent number 7,955,950
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Junedong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained ultra-thin SOI transistor formed by replacement gate
- Patent number 7,955,909
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator substrate with built-in substrate junction
- Patent number 7,955,940
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an SOI substrate contact
- Patent number 7,867,893
- Issue date Jan 11, 2011
- International Business Machines Corporation
- Haining S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of buried oxide in SIMOX
- Patent number 7,492,008
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Stephen Richard Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid crystallographic surface orientation substrate having one or...
- Patent number 7,348,633
- Issue date Mar 25, 2008
- International Business Machines Corporation
- Junedong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Divot reduction in SIMOX layers
- Patent number 6,967,376
- Issue date Nov 22, 2005
- International Business Machines Corporation
- Stephen R. Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of buried oxide in SIMOX
- Patent number 6,784,072
- Issue date Aug 31, 2004
- International Business Machines Corporation
- Stephen Richard Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a body contact using BOX modification
- Patent number 6,531,375
- Issue date Mar 11, 2003
- International Business Machines Corporation
- Kenneth J. Giewont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling internal thermal oxidation and eliminating deep divots...
- Patent number 6,495,429
- Issue date Dec 17, 2002
- International Business Machines Corporation
- Michael E. Adamcek
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING ISOLATED CAPACITORS AND STRUCTURE THEREOF
- Publication number 20140210039
- Publication date Jul 31, 2014
- International Business Machines Corporation
- Oh-Jung KWON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of Fabricating Isolated Capacitors and Structure Thereof
- Publication number 20140080281
- Publication date Mar 20, 2014
- International Business Machines Corporation
- Oh-Jung KWON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION
- Publication number 20130273715
- Publication date Oct 17, 2013
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FORMATION IN SUBSTRATE
- Publication number 20130043559
- Publication date Feb 21, 2013
- International Business Machines Corporation
- JUNEDONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRE...
- Publication number 20130009277
- Publication date Jan 10, 2013
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Isolated Capacitors and Structure Thereof
- Publication number 20120267754
- Publication date Oct 25, 2012
- International Business Machines Corporation
- Oh-Jung KWON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of Fabricating Isolated Capacitors and Structure Thereof
- Publication number 20120012971
- Publication date Jan 19, 2012
- International Business Machines Corporation
- Oh-Jung KWON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ENHANCED CAPACITANCE DEEP TRENCH CAPACITOR FOR EDRAM
- Publication number 20110272702
- Publication date Nov 10, 2011
- International Business Machines Corporation
- Oh-jung Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION
- Publication number 20110193149
- Publication date Aug 11, 2011
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRE...
- Publication number 20110193193
- Publication date Aug 11, 2011
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED ULTRA-THIN SOI TRANSISTOR FORMED BY REPLACEMENT GATE
- Publication number 20110121363
- Publication date May 26, 2011
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION
- Publication number 20110049594
- Publication date Mar 3, 2011
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED ULTRA-THIN SOI TRANSISTOR FORMED BY REPLACEMENT GATE
- Publication number 20090242936
- Publication date Oct 1, 2009
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR SUBSTRATE WITH A DIFFUSION BARRIER
- Publication number 20090102026
- Publication date Apr 23, 2009
- International Business Machines Corporation
- Junedong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SOI WITH GETTERING LAYER
- Publication number 20090092810
- Publication date Apr 9, 2009
- International Business Machines Corporation
- Junedong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN SOI SUBSTRATE CONTACT
- Publication number 20090001466
- Publication date Jan 1, 2009
- International Business Machines Corporation
- Haining S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CRYSTALLOGRAPHIC SURFACE ORIENTATION SUBSTRATE HAVING ONE OR...
- Publication number 20080111189
- Publication date May 15, 2008
- Junedong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CRYSTALLOGRAPHIC SURFACE ORIENTATION SUBSTRATE HAVING ONE O...
- Publication number 20070122634
- Publication date May 31, 2007
- International Business Machines Corporation
- Junedong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electrical quality buried oxide in simox
- Publication number 20050170570
- Publication date Aug 4, 2005
- International Business Machines Corporation
- Joel P. DeSouza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of buried oxide in SIMOX
- Publication number 20050003626
- Publication date Jan 6, 2005
- Stephen Richard Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SILICON-ON-INSULATOR WAFERS HAVING PROCESS RESIST...
- Publication number 20040266129
- Publication date Dec 30, 2004
- International Business Machines Corporation
- Joel P. DeSouza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Divot reduction in SIMOX layers
- Publication number 20040197940
- Publication date Oct 7, 2004
- Internatioal Business Machines Corporation
- Stephen R. Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of buried oxide in SIMOX
- Publication number 20040013886
- Publication date Jan 22, 2004
- International Business Machines Corporation
- Stephen Richard Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Divot reduction in SIMOX layers
- Publication number 20020190318
- Publication date Dec 19, 2002
- International Business Machines Corporation
- Stephen R. Fox
- H01 - BASIC ELECTRIC ELEMENTS

Junedong LEE

Person

Patents Grantslast 30 patents

Method of fabricating isolated capacitors and structure thereof

Method of fabricating isolated capacitors and structure thereof

Method of fabricating isolated capacitors and structure thereof

Silicon-on-insulator substrate with built-in substrate junction

Method of fabricating isolated capacitors and structure thereof

Structure and method for forming isolation and buried plate for tre...

Strained ultra-thin SOI transistor formed by replacement gate

Silicon-on-insulator substrate with built-in substrate junction

Enhanced capacitance deep trench capacitor for EDRAM

Structure and method for forming isolation and buried plate for tre...

Fabrication of SOI with gettering layer

Semiconductor-on-insulator substrate with a diffusion barrier

Strained ultra-thin SOI transistor formed by replacement gate

Silicon-on-insulator substrate with built-in substrate junction

Method of forming an SOI substrate contact

Control of buried oxide in SIMOX

Hybrid crystallographic surface orientation substrate having one or...

Divot reduction in SIMOX layers

Control of buried oxide in SIMOX

Method of forming a body contact using BOX modification

Controlling internal thermal oxidation and eliminating deep divots...

Patents Applicationslast 30 patents

METHOD OF FABRICATING ISOLATED CAPACITORS AND STRUCTURE THEREOF

Method of Fabricating Isolated Capacitors and Structure Thereof

SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION

TRENCH FORMATION IN SUBSTRATE

STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRE...

Method of Fabricating Isolated Capacitors and Structure Thereof

Method of Fabricating Isolated Capacitors and Structure Thereof

ENHANCED CAPACITANCE DEEP TRENCH CAPACITOR FOR EDRAM

SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION

STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRE...

STRAINED ULTRA-THIN SOI TRANSISTOR FORMED BY REPLACEMENT GATE

SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION

STRAINED ULTRA-THIN SOI TRANSISTOR FORMED BY REPLACEMENT GATE

SEMICONDUCTOR-ON-INSULATOR SUBSTRATE WITH A DIFFUSION BARRIER

FABRICATION OF SOI WITH GETTERING LAYER

METHOD OF FORMING AN SOI SUBSTRATE CONTACT

HYBRID CRYSTALLOGRAPHIC SURFACE ORIENTATION SUBSTRATE HAVING ONE OR...

HYBRID CRYSTALLOGRAPHIC SURFACE ORIENTATION SUBSTRATE HAVING ONE O...

High electrical quality buried oxide in simox

Control of buried oxide in SIMOX

METHOD OF FORMING SILICON-ON-INSULATOR WAFERS HAVING PROCESS RESIST...

Divot reduction in SIMOX layers

Control of buried oxide in SIMOX

Divot reduction in SIMOX layers