Jung-Chi Tai

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
FETs and methods of forming FETs
- Patent number 12,094,761
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 12,057,450
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,948,999
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secondary battery structure having windable flexible polymer matrix...
- Patent number 11,876,175
- Issue date Jan 16, 2024
- KANG NA HSIUNG ENTERPRISE CO., LTD.
- Fei-Yi Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supportive layer in source/drains of FinFET devices
- Patent number 11,855,142
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETS and methods of forming FETS
- Patent number 11,728,208
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 11,652,105
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supportive layer in source/drains of FinFET devices
- Patent number 11,476,331
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,430,878
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETS and methods of forming FETS
- Patent number 11,004,724
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,991,795
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supportive layer in source/drains of FinFET devices
- Patent number 10,854,715
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,749,013
- Issue date Aug 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,468,482
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETS and methods of forming FETS
- Patent number 10,269,618
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method for fabricating the same
- Patent number 10,103,249
- Issue date Oct 16, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,905,641
- Issue date Feb 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETS and methods of forming FETs
- Patent number 9,831,116
- Issue date Nov 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20250006549
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS
- Publication number 20240355826
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240204084
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- Publication number 20240096958
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20230343635
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Regions with Large Landing Areas for Contact Plugs
- Publication number 20220384437
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- Publication number 20220367630
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220359733
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Regions with Large Landing Areas for Contact Plugs
- Publication number 20220028856
- Publication date Jan 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20210265195
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Supportive Layer in Source/Drains of FinFET Devices
- Publication number 20210083052
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20200381539
- Publication date Dec 3, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECONDARY BATTERY STRUCTURE HAVING WINDABLE FLEXIBLE POLYMER MATRIX...
- Publication number 20200328472
- Publication date Oct 15, 2020
- KANG NA HSIUNG ENTERPRISE CO., LTD.
- FEI-YI HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200035784
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20190252240
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190051737
- Publication date Feb 14, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180175144
- Publication date Jun 21, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20180082883
- Publication date Mar 22, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20170077228
- Publication date Mar 16, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS AND METHODS OF FORMING FETS
- Publication number 20170076973
- Publication date Mar 16, 2017
- Taiwan Semiconductor Manufacturing Company., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20170077222
- Publication date Mar 16, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru LEE
- H01 - BASIC ELECTRIC ELEMENTS

Jung-Chi Tai

Person

Patents Grantslast 30 patents

FETs and methods of forming FETs

Epitaxy regions with large landing areas for contact plugs

Semiconductor device

Secondary battery structure having windable flexible polymer matrix...

Supportive layer in source/drains of FinFET devices

FETS and methods of forming FETS

Epitaxy regions with large landing areas for contact plugs

Supportive layer in source/drains of FinFET devices

Method for fabricating semiconductor device

FETS and methods of forming FETS

Semiconductor device and manufacturing method thereof

Supportive layer in source/drains of FinFET devices

Semiconductor device and method for fabricating the same

Semiconductor device and manufacturing method thereof

FETS and methods of forming FETS

FinFET device and method for fabricating the same

Semiconductor device and manufacturing method thereof

FETS and methods of forming FETs

Patents Applicationslast 30 patents

FETS and Methods of Forming FETS

EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS

SEMICONDUCTOR DEVICE

SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES

FETS and Methods of Forming FETS

Epitaxy Regions with Large Landing Areas for Contact Plugs

SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES

SEMICONDUCTOR DEVICE

Epitaxy Regions with Large Landing Areas for Contact Plugs

FETS and Methods of Forming FETS

Supportive Layer in Source/Drains of FinFET Devices

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SECONDARY BATTERY STRUCTURE HAVING WINDABLE FLEXIBLE POLYMER MATRIX...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FETS and Methods of Forming FETS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FETS and Methods of Forming FETS

FINFET DEVICE AND METHOD FOR FABRICATING THE SAME

FETS AND METHODS OF FORMING FETS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF