Jung-Suk Goo

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for simulating gate capacitance of a tucked tr...
- Patent number 8,818,785
- Issue date Aug 26, 2014
- GLOBALFOUNDRIES Inc.
- Jung-Suk Goo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dynamic random access memory (DRAM) cells and methods for fabricati...
- Patent number 8,618,592
- Issue date Dec 31, 2013
- Advanced Micro Devices, Inc.
- Hyun-Jin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (“SOI”) transistor test structure for measurin...
- Patent number 8,586,981
- Issue date Nov 19, 2013
- Advanced Micro Devices, Inc.
- Qiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body tie test structure for accurate body effect measurement
- Patent number 8,293,606
- Issue date Oct 23, 2012
- GLOBALFOUNDARIES, Inc.
- Sriram Madhavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for robust statistical semiconductor device modeling
- Patent number 8,275,596
- Issue date Sep 25, 2012
- GLOBALFOUNDRIES Inc.
- Vineet Wason
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two-step simulation methodology for aging simulations
- Patent number 8,099,269
- Issue date Jan 17, 2012
- GLOBALFOUNDRIES Inc.
- Rasit O. Topaloglu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dynamic random access memory (DRAM) cells and methods for fabricati...
- Patent number 7,977,172
- Issue date Jul 12, 2011
- Advanced Micro Devices, Inc.
- Hyun-Jin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system with MOS device
- Patent number 7,932,103
- Issue date Apr 26, 2011
- GLOBALFOUNDRIES Inc.
- Niraj Subba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having increased carrier mobility
- Patent number 7,923,785
- Issue date Apr 12, 2011
- GLOBALFOUNDRIES Inc.
- Qi Xiang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Body tie test structure for accurate body effect measurement
- Patent number 7,880,229
- Issue date Feb 1, 2011
- GLOBALFOUNDRIES Inc.
- Sriram Madhavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for adjusting a transistor model for increased circuit simul...
- Patent number 7,761,823
- Issue date Jul 20, 2010
- Advanced Micro Devices, Inc.
- Jung-Suk Goo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Shallow trench isolation process and structure with minimized strai...
- Patent number 7,732,336
- Issue date Jun 8, 2010
- GLOBALFOUNDRIES Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation process and structure with minimized strai...
- Patent number 7,462,549
- Issue date Dec 9, 2008
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS gates formed by integrating metals having different work funct...
- Patent number 7,176,531
- Issue date Feb 13, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon MOSFET having improved source/drain extension dopa...
- Patent number 7,170,084
- Issue date Jan 30, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit channel region
- Patent number 7,138,302
- Issue date Nov 21, 2006
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of finFET using a sidewall epitaxial layer
- Patent number 7,078,299
- Issue date Jul 18, 2006
- Advanced Micro Devices, Inc.
- Witold P. Maszara
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Strained silicon semiconductor on insulator MOSFET
- Patent number 7,033,869
- Issue date Apr 25, 2006
- Advanced Micro Devices
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator substrate having improved thermal conductivity...
- Patent number 7,015,078
- Issue date Mar 21, 2006
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon MOSFET having improved thermal conductivity and me...
- Patent number 7,012,007
- Issue date Mar 14, 2006
- Advanced Micro Device, Inc.
- Jung-Suk Goo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation process using oxide deposition and anneal
- Patent number 6,962,857
- Issue date Nov 8, 2005
- Advanced Micro Devices, Inc.
- Minh-Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing as a channel region to reduce source/drain juncti...
- Patent number 6,955,969
- Issue date Oct 18, 2005
- Advanced Micro Devices, Inc.
- Ihsan J. Djomehri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator MOSFET having strained silicon channel
- Patent number 6,943,087
- Issue date Sep 13, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate strained silicon finFET process
- Patent number 6,936,516
- Issue date Aug 30, 2005
- Advanced Micro Devices, Inc.
- Jung-Suk Goo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon MOSFETs having NMOS gates with work functions for...
- Patent number 6,929,992
- Issue date Aug 16, 2005
- Advanced Micro Devices, Inc.
- Ihsan J. Djomehri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a thick strained silicon layer and meth...
- Patent number 6,902,991
- Issue date Jun 7, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon MOSFETs having improved thermal dissipation
- Patent number 6,900,143
- Issue date May 31, 2005
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating metals having different work functions to fo...
- Patent number 6,872,613
- Issue date Mar 29, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion to avoid cross contamination
- Patent number 6,858,503
- Issue date Feb 22, 2005
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device incorporating strained silicon in the channel region
- Patent number 6,800,910
- Issue date Oct 5, 2004
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method and Apparatus for Simulating Gate Capacitance of a Tucked Tr...
- Publication number 20130117001
- Publication date May 9, 2013
- Advanced Micro Devices, Inc.
- Jung-Suk Goo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method and Apparatus for Simulating Junction Capacitance of a Tucke...
- Publication number 20130117002
- Publication date May 9, 2013
- Advanced Micro Devices, Inc.
- Jung-Suk Goo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELLS AND METHODS FOR FABRICATI...
- Publication number 20110204429
- Publication date Aug 25, 2011
- Advanced Micro Devices, Inc.
- Hyun-Jin CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BODY TIE TEST STRUCTURE FOR ACCURATE BODY EFFECT MEASUREMENT
- Publication number 20110086484
- Publication date Apr 14, 2011
- GLOBALFOUNDRIES INC.
- Sriram MADHAVAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELLS AND METHODS FOR FABRICATI...
- Publication number 20100144106
- Publication date Jun 10, 2010
- Advanced Micro Devices, Inc.
- Hyun-Jin CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BODY TIE TEST STRUCTURE FOR ACCURATE BODY EFFECT MEASUREMENT
- Publication number 20090101976
- Publication date Apr 23, 2009
- Advanced Micro Devices, Inc.
- Sriram MADHAVAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP SIMULATION METHODOLOGY FOR AGING SIMULATIONS
- Publication number 20090094013
- Publication date Apr 9, 2009
- Advanced Micro Devices, Inc.
- Rasit O. TOPALOGLU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method for adjusting a transistor model for increased circuit simul...
- Publication number 20080286887
- Publication date Nov 20, 2008
- Advanced Micro Devices, Inc.
- Jung-Suk Goo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SHALLOW TRENCH ISOLATION PROCESS AND STRUCTURE WITH MINIMIZED STRAI...
- Publication number 20080213952
- Publication date Sep 4, 2008
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH MOS DEVICE
- Publication number 20080204052
- Publication date Aug 28, 2008
- Advanced Micro Devices, Inc.
- Niraj Subba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-on-insulator ("SOI") transistor test structure for measurin...
- Publication number 20080185581
- Publication date Aug 7, 2008
- Advanced Micro Devices, Inc.
- Qiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for robust statistical semiconductor device modeling
- Publication number 20080141189
- Publication date Jun 12, 2008
- Advanced Micro Devices, Inc.
- Vineet Wason
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of fabricating a strained silicon channel FinFET
- Publication number 20050153486
- Publication date Jul 14, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation process and structure with minimized strai...
- Publication number 20050151222
- Publication date Jul 14, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FO...
- Publication number 20050054149
- Publication date Mar 10, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of growing as a channel region to reduce source/drain juncti...
- Publication number 20050048743
- Publication date Mar 3, 2005
- Advanced Micro Devices, Inc.
- Ihsan J. Djomehri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FINFET USING A SIDEWALL EPITAXIAL LAYER
- Publication number 20050048727
- Publication date Mar 3, 2005
- Advanced Micro Devices, Inc.
- Witold P. Maszara
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Field effect transistor having increased carrier mobility
- Publication number 20050040477
- Publication date Feb 24, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a thick strained silicon layer and meth...
- Publication number 20040087114
- Publication date May 6, 2004
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Finfet having improved carrier mobility and method of its formation
- Publication number 20040061178
- Publication date Apr 1, 2004
- Advanced Micro Devices Inc
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS

Jung-Suk Goo

Person

Patents Grantslast 30 patents

Method and apparatus for simulating gate capacitance of a tucked tr...

Dynamic random access memory (DRAM) cells and methods for fabricati...

Silicon-on-insulator (“SOI”) transistor test structure for measurin...

Body tie test structure for accurate body effect measurement

Method for robust statistical semiconductor device modeling

Two-step simulation methodology for aging simulations

Dynamic random access memory (DRAM) cells and methods for fabricati...

Integrated circuit system with MOS device

Field effect transistor having increased carrier mobility

Body tie test structure for accurate body effect measurement

Method for adjusting a transistor model for increased circuit simul...

Shallow trench isolation process and structure with minimized strai...

Shallow trench isolation process and structure with minimized strai...

CMOS gates formed by integrating metals having different work funct...

Strained silicon MOSFET having improved source/drain extension dopa...

Method of fabricating an integrated circuit channel region

Formation of finFET using a sidewall epitaxial layer

Strained silicon semiconductor on insulator MOSFET

Silicon on insulator substrate having improved thermal conductivity...

Strained silicon MOSFET having improved thermal conductivity and me...

Shallow trench isolation process using oxide deposition and anneal

Method of growing as a channel region to reduce source/drain juncti...

Semiconductor on insulator MOSFET having strained silicon channel

Replacement gate strained silicon finFET process

Strained silicon MOSFETs having NMOS gates with work functions for...

Semiconductor device having a thick strained silicon layer and meth...

Strained silicon MOSFETs having improved thermal dissipation

Method for integrating metals having different work functions to fo...

Depletion to avoid cross contamination

FinFET device incorporating strained silicon in the channel region

Patents Applicationslast 30 patents

Method and Apparatus for Simulating Gate Capacitance of a Tucked Tr...

Method and Apparatus for Simulating Junction Capacitance of a Tucke...

DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELLS AND METHODS FOR FABRICATI...

BODY TIE TEST STRUCTURE FOR ACCURATE BODY EFFECT MEASUREMENT

DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELLS AND METHODS FOR FABRICATI...

BODY TIE TEST STRUCTURE FOR ACCURATE BODY EFFECT MEASUREMENT

TWO-STEP SIMULATION METHODOLOGY FOR AGING SIMULATIONS

Method for adjusting a transistor model for increased circuit simul...

SHALLOW TRENCH ISOLATION PROCESS AND STRUCTURE WITH MINIMIZED STRAI...

INTEGRATED CIRCUIT SYSTEM WITH MOS DEVICE

Silicon-on-insulator ("SOI") transistor test structure for measurin...

Method for robust statistical semiconductor device modeling

Method of fabricating a strained silicon channel FinFET

Shallow trench isolation process and structure with minimized strai...

METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FO...

Method of growing as a channel region to reduce source/drain juncti...

FORMATION OF FINFET USING A SIDEWALL EPITAXIAL LAYER

Field effect transistor having increased carrier mobility

Semiconductor device having a thick strained silicon layer and meth...

Finfet having improved carrier mobility and method of its formation