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Jung-Tsung Tseng
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Sijhih City, TW
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Patents Grants
last 30 patents
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Patent Grant
Method for fabricating transistor having fully silicided gate
Patent number
6,902,994
Issue date
Jun 7, 2005
United Microelectronics Corp.
Yoyi Gong
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Shallow trench isolation and fabricating method thereof
Publication number
20060118917
Publication date
Jun 8, 2006
Yoyi Gong
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Shallow trench isolation and fabricating method thereof
Publication number
20060038261
Publication date
Feb 23, 2006
Yoyi Gong
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Shallow trench isolation and fabricating method thereof
Publication number
20050093103
Publication date
May 5, 2005
Yoyi Gong
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating transistor having fully silicided gate
Publication number
20050037558
Publication date
Feb 17, 2005
Yoyi Gong
H01 - BASIC ELECTRIC ELEMENTS