Junhua Yan

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method of planarizing polysilicon gate
- Patent number 9,570,562
- Issue date Feb 14, 2017
- Shanghai Huali Microelectronics Corporation
- Tong Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming strained source and drain regions in a P-type fin...
- Patent number 8,987,101
- Issue date Mar 24, 2015
- Shanghai Huali Microelectronics Corporation
- Yi Ding
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING STRAINED SOURCE AND DRAIN REGIONS IN A P-TYPE FIN...
- Publication number 20140357041
- Publication date Dec 4, 2014
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Yi Ding
- H01 - BASIC ELECTRIC ELEMENTS