Junichi ARIYOSHI

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device with short-free source select gate...
- Patent number 10,256,245
- Issue date Apr 9, 2019
- SanDisk Technologies LLC
- Junichi Ariyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing annular etch-stop spacer...
- Patent number 10,242,994
- Issue date Mar 26, 2019
- SanDisk Technologies LLC
- Takashi Inomata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact three-dimensional memory device having a seal ring and meth...
- Patent number 10,115,681
- Issue date Oct 30, 2018
- SanDisk Technologies LLC
- Junichi Ariyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having select gate electrode that i...
- Patent number 10,083,982
- Issue date Sep 25, 2018
- SanDisk Technologies LLC
- Keisuke Shigemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel memory stack structure employing stacks of a support ped...
- Patent number 9,786,681
- Issue date Oct 10, 2017
- SanDisk Technologies LLC
- Junichi Ariyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device with epitaxial semiconductor pedest...
- Patent number 9,543,318
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-semiconductor alloy region for enhancing on current in a thre...
- Patent number 9,524,977
- Issue date Dec 20, 2016
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SHORT-FREE SOURCE SELECT GATE...
- Publication number 20180261613
- Publication date Sep 13, 2018
- SanDisk Technologies LLC
- Junichi Ariyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT I...
- Publication number 20180138194
- Publication date May 17, 2018
- SanDisk Technologies LLC
- Keisuke SHIGEMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANNULAR ETCH-STOP SPACER...
- Publication number 20180006049
- Publication date Jan 4, 2018
- SanDisk Technologies LLC
- Takashi INOMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILEVEL MEMORY STACK STRUCTURE EMPLOYING STACKS OF A SUPPORT PED...
- Publication number 20170287926
- Publication date Oct 5, 2017
- SanDisk Technologies LLC
- Junichi Ariyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-SEMICONDUCTOR ALLOY REGION FOR ENHANCING ON CURRENT IN A THRE...
- Publication number 20160307908
- Publication date Oct 20, 2016
- SanDisk Technologies, Inc.
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS

Junichi ARIYOSHI

Person

Patents Grantslast 30 patents

Three-dimensional memory device with short-free source select gate...

Three-dimensional memory device containing annular etch-stop spacer...

Compact three-dimensional memory device having a seal ring and meth...

Three-dimensional memory device having select gate electrode that i...

Multilevel memory stack structure employing stacks of a support ped...

Three dimensional memory device with epitaxial semiconductor pedest...

Metal-semiconductor alloy region for enhancing on current in a thre...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE WITH SHORT-FREE SOURCE SELECT GATE...

THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT I...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANNULAR ETCH-STOP SPACER...

MULTILEVEL MEMORY STACK STRUCTURE EMPLOYING STACKS OF A SUPPORT PED...

METAL-SEMICONDUCTOR ALLOY REGION FOR ENHANCING ON CURRENT IN A THRE...