Junichi Murota

Person

Sendai, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a metal-semiconductor junction with a r...
- Patent number 6,800,544
- Issue date Oct 5, 2004
- President of Tohoku University
- Junichi Murota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method for producing the same
- Patent number 6,770,507
- Issue date Aug 3, 2004
- Shin-Etsu Handotai Co., Ltd.
- Takao Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal-semiconductor junction with a r...
- Patent number 6,621,145
- Issue date Sep 16, 2003
- President of Tohoku University
- Junichi Murota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor depositing method
- Patent number 5,705,224
- Issue date Jan 6, 1998
- Kokusai Electric Co., Ltd.
- Junichi Murota
- C30 - CRYSTAL GROWTH
Information Patent Grant
Draft chamber
- Patent number 4,976,815
- Issue date Dec 11, 1990
- Tadahiro; Ohmi
- Yutaka Hiratsuka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device having a metal-semiconductor junction with a r...
- Publication number 20040033686
- Publication date Feb 19, 2004
- Junichi Murota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer and method for producing the same
- Publication number 20020182827
- Publication date Dec 5, 2002
- Takao Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a fine structure on a surface of a semiconductor...
- Publication number 20020119663
- Publication date Aug 29, 2002
- Takashi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS field-effect transistor comprising layered structure including...
- Publication number 20020109135
- Publication date Aug 15, 2002
- Junichi Murota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a metal-semiconductor junction with a r...
- Publication number 20020027285
- Publication date Mar 7, 2002
- Junichi Murota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet with strained channel layer
- Publication number 20020008289
- Publication date Jan 24, 2002
- Junichi Murota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laminate structure and method of manufacturing the same
- Publication number 20010016247
- Publication date Aug 23, 2001
- TOHOKU UNIVERSITY
- Takashi Matsuura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Junichi Murota

Person

Patents Grantslast 30 patents

Semiconductor device having a metal-semiconductor junction with a r...

Semiconductor wafer and method for producing the same

Semiconductor device having a metal-semiconductor junction with a r...

Vapor depositing method

Draft chamber

Patents Applicationslast 30 patents

Semiconductor device having a metal-semiconductor junction with a r...

Semiconductor wafer and method for producing the same

Method for forming a fine structure on a surface of a semiconductor...

MOS field-effect transistor comprising layered structure including...

Semiconductor device having a metal-semiconductor junction with a r...

Mosfet with strained channel layer

Laminate structure and method of manufacturing the same