Junjing Bao

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor cell with self-aligned gate contact
- Patent number 12,342,595
- Issue date Jun 24, 2025
- QUALCOMM Incorporated
- Junjing Bao
Information Patent Grant
Back-end-of-line (BEOL) high resistance (Hi-R) conductor layer in a...
- Patent number 12,068,238
- Issue date Aug 20, 2024
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional (3D) interconnect structures employing via layer...
- Patent number 12,057,394
- Issue date Aug 6, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits (ICs) employing directly coupled metal lines be...
- Patent number 11,942,414
- Issue date Mar 26, 2024
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor having a source/drain contact with a single inner spacer
- Patent number 11,901,434
- Issue date Feb 13, 2024
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact isolation in a semiconductor
- Patent number 11,901,427
- Issue date Feb 13, 2024
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate high electron mobility transistors (HEMTs) employing tun...
- Patent number 11,855,198
- Issue date Dec 26, 2023
- QUALCOMM Incorporated
- Chenjie Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional (3D) double gate semiconductor
- Patent number 11,710,789
- Issue date Jul 25, 2023
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) comprising inner spacers and voids be...
- Patent number 11,411,092
- Issue date Aug 9, 2022
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid low resistance metal lines
- Patent number 11,404,373
- Issue date Aug 2, 2022
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized contact structure
- Patent number 11,387,335
- Issue date Jul 12, 2022
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superlattice fin
- Patent number 11,380,685
- Issue date Jul 5, 2022
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device channel profile structure
- Patent number 11,335,683
- Issue date May 17, 2022
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end-of-line integrated metal-insulator-metal capacitor
- Patent number 11,302,773
- Issue date Apr 12, 2022
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary cell circuits employing isolation structures for defe...
- Patent number 11,295,991
- Issue date Apr 5, 2022
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap underneath passive devices
- Patent number 11,289,365
- Issue date Mar 29, 2022
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-metal capacitor from subtractive back-end-of-line scheme
- Patent number 11,239,307
- Issue date Feb 1, 2022
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices with reduced parasitic capacitance
- Patent number 11,189,617
- Issue date Nov 30, 2021
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with insulator
- Patent number 11,164,952
- Issue date Nov 2, 2021
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with low parasitic capacitance
- Patent number 11,145,649
- Issue date Oct 12, 2021
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact liner to enable different CPP devices
- Patent number 10,847,507
- Issue date Nov 24, 2020
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact for semiconductor device
- Patent number 10,833,017
- Issue date Nov 10, 2020
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finger metal-oxide-metal (FMOM) capacitor
- Patent number 10,686,031
- Issue date Jun 16, 2020
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with fluorinated graphene spacer
- Patent number 10,665,678
- Issue date May 26, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit (IC) interconnect structure having a metal layer...
- Patent number 10,651,122
- Issue date May 12, 2020
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of metal wraparound for low via resistance
- Patent number 10,636,737
- Issue date Apr 28, 2020
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with low resistivity carbon alloy
- Patent number 10,636,789
- Issue date Apr 28, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rotated metal-oxide-metal (RTMOM) capacitor
- Patent number 10,615,113
- Issue date Apr 7, 2020
- QUALCOMM Incorporated
- Xia Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
MIM capacitor containing negative capacitance material
- Patent number 10,566,413
- Issue date Feb 18, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene as interlayer dielectric
- Patent number 10,354,955
- Issue date Jul 16, 2019
- QUALCOMM Incorporated
- Ye Lu
- C01 - INORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
METAL GATE RECESS STOP FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250185297
- Publication date Jun 5, 2025
- QUALCOMM Incorporated
- Kwanyong LIM
Information Patent Application
BOTTOM CHANNEL TRENCH ISOLATED GATE ALL AROUND (GAA) FIELD EFFECT T...
- Publication number 20250133772
- Publication date Apr 24, 2025
- QUALCOMM Incorporated
- Kwanyong LIM
Information Patent Application
GATE-ALL-AROUND (GAA) NANOSHEET DEVICE HAVING INNER GATE SPACER WIT...
- Publication number 20250107157
- Publication date Mar 27, 2025
- QUALCOMM Incorporated
- Xia LI
Information Patent Application
MULTI-LAYER DIELECTRIC GATE SPACER FOR FIN FIELD EFFECT TRANSISTORS...
- Publication number 20250107200
- Publication date Mar 27, 2025
- QUALCOMM Incorporated
- Xia LI
Information Patent Application
AIRGAPS IN TOP LAYERS OF SEMICONDUCTOR DEVICES
- Publication number 20250096139
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- John Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...
- Publication number 20250072105
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED REVERSE SELECTIVE BARRIER STRUCTURE
- Publication number 20250046716
- Publication date Feb 6, 2025
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT N/P LOCAL INTERCONNECT
- Publication number 20240404872
- Publication date Dec 5, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RE...
- Publication number 20240379679
- Publication date Nov 14, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT STRUCTURES AND METHODS FOR MAKING THE SAME
- Publication number 20240379770
- Publication date Nov 14, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE EMPLOYIN...
- Publication number 20240363690
- Publication date Oct 31, 2024
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE CONTACT ON SOURCE AND DRAIN
- Publication number 20240321965
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC CIRCUITS INCLUDING CIRCUITS OF DIFFERENT HEIGHTS AND RELATED...
- Publication number 20240321861
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS...
- Publication number 20240321631
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS
- Publication number 20240321860
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/...
- Publication number 20240297218
- Publication date Sep 5, 2024
- QUALCOMM Incorporated
- Kwanyong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SMALL CONTACT STRUCTURE
- Publication number 20240266217
- Publication date Aug 8, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE C...
- Publication number 20240243131
- Publication date Jul 18, 2024
- QUALCOMM Incorporated
- Ming-Huei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS (ICs) EMPLOYING DIRECTLY COUPLED METAL LINES BE...
- Publication number 20240203866
- Publication date Jun 20, 2024
- QUALCOMM Incorporated
- John Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P...
- Publication number 20240204109
- Publication date Jun 20, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTA...
- Publication number 20240096964
- Publication date Mar 21, 2024
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS
- Publication number 20240096698
- Publication date Mar 21, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW VIA RESISTANCE INTERCONNECT STRUCTURE
- Publication number 20230223341
- Publication date Jul 13, 2023
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS (ICs) EMPLOYING DIRECTLY COUPLED METAL LINES BE...
- Publication number 20230108523
- Publication date Apr 6, 2023
- QUALCOMM Incorporated
- John Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) INTERCONNECT STRUCTURES EMPLOYING VIA LAYER...
- Publication number 20230061693
- Publication date Mar 2, 2023
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL (3D) DOUBLE GATE SEMICONDUCTOR
- Publication number 20230008615
- Publication date Jan 12, 2023
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INN...
- Publication number 20230009977
- Publication date Jan 12, 2023
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HAVING A SOURCE/DRAIN CONTACT WITH A SINGLE INNER SPACER
- Publication number 20220352347
- Publication date Nov 3, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE FUNCTION BLOCKS ON A SYSTEM ON A CHIP (SOC)
- Publication number 20220336351
- Publication date Oct 20, 2022
- QUALCOMM Incorporated
- John Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CELL WITH SELF-ALIGNED GATE CONTACT
- Publication number 20220336607
- Publication date Oct 20, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS

Junjing Bao

Person

Patents Grantslast 30 patents

Transistor cell with self-aligned gate contact

Back-end-of-line (BEOL) high resistance (Hi-R) conductor layer in a...

Three-dimensional (3D) interconnect structures employing via layer...

Integrated circuits (ICs) employing directly coupled metal lines be...

Semiconductor having a source/drain contact with a single inner spacer

Gate contact isolation in a semiconductor

Multi-gate high electron mobility transistors (HEMTs) employing tun...

Three dimensional (3D) double gate semiconductor

Field effect transistor (FET) comprising inner spacers and voids be...

Hybrid low resistance metal lines

Optimized contact structure

Semiconductor device with superlattice fin

Device channel profile structure

Back-end-of-line integrated metal-insulator-metal capacitor

Complementary cell circuits employing isolation structures for defe...

Air gap underneath passive devices

Metal-oxide-metal capacitor from subtractive back-end-of-line scheme

Gate-all-around devices with reduced parasitic capacitance

Transistor with insulator

Semiconductor devices with low parasitic capacitance

Contact liner to enable different CPP devices

Contact for semiconductor device

Finger metal-oxide-metal (FMOM) capacitor

Transistor with fluorinated graphene spacer

Integrated circuit (IC) interconnect structure having a metal layer...

Structure and method of metal wraparound for low via resistance

Transistor with low resistivity carbon alloy

Rotated metal-oxide-metal (RTMOM) capacitor

MIM capacitor containing negative capacitance material

Graphene as interlayer dielectric

Patents Applicationslast 30 patents

METAL GATE RECESS STOP FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

BOTTOM CHANNEL TRENCH ISOLATED GATE ALL AROUND (GAA) FIELD EFFECT T...

GATE-ALL-AROUND (GAA) NANOSHEET DEVICE HAVING INNER GATE SPACER WIT...

MULTI-LAYER DIELECTRIC GATE SPACER FOR FIN FIELD EFFECT TRANSISTORS...

AIRGAPS IN TOP LAYERS OF SEMICONDUCTOR DEVICES

VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...

MODIFIED REVERSE SELECTIVE BARRIER STRUCTURE

DIRECT N/P LOCAL INTERCONNECT

THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RE...

SELF-ALIGNED CONTACT STRUCTURES AND METHODS FOR MAKING THE SAME

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE EMPLOYIN...

SELECTIVE CONTACT ON SOURCE AND DRAIN

LOGIC CIRCUITS INCLUDING CIRCUITS OF DIFFERENT HEIGHTS AND RELATED...

BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS...

ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS

TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/...

SELF-ALIGNED SMALL CONTACT STRUCTURE

N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE C...

INTEGRATED CIRCUITS (ICs) EMPLOYING DIRECTLY COUPLED METAL LINES BE...

COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P...

VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTA...

SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS

LOW VIA RESISTANCE INTERCONNECT STRUCTURE

INTEGRATED CIRCUITS (ICs) EMPLOYING DIRECTLY COUPLED METAL LINES BE...

THREE-DIMENSIONAL (3D) INTERCONNECT STRUCTURES EMPLOYING VIA LAYER...

THREE DIMENSIONAL (3D) DOUBLE GATE SEMICONDUCTOR

SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INN...

SEMICONDUCTOR HAVING A SOURCE/DRAIN CONTACT WITH A SINGLE INNER SPACER

MULTIPLE FUNCTION BLOCKS ON A SYSTEM ON A CHIP (SOC)

TRANSISTOR CELL WITH SELF-ALIGNED GATE CONTACT