Junpei Kanazawa

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device including through-memory-level via...
- Patent number 11,515,317
- Issue date Nov 29, 2022
- SanDisk Technologies LLC
- Takaaki Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including multi-tier moat isolation...
- Patent number 11,404,427
- Issue date Aug 2, 2022
- SanDisk Technologies LLC
- Yoshitaka Otsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing auxiliary support pillar...
- Patent number 11,398,497
- Issue date Jul 26, 2022
- SanDisk Technologies LLC
- Kengo Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with via structures surrounded by p...
- Patent number 11,282,783
- Issue date Mar 22, 2022
- SanDisk Technologies LLC
- Yoshitaka Otsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing a polygonal lattice of s...
- Patent number 10,937,801
- Issue date Mar 2, 2021
- SanDisk Technologies LLC
- Yoshitaka Otsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having double-width staircase regio...
- Patent number 10,615,172
- Issue date Apr 7, 2020
- SanDisk Technologies LLC
- Koichiro Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing structurally reinforced...
- Patent number 10,256,252
- Issue date Apr 9, 2019
- SanDisk Technologies LLC
- Junpei Kanazawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING MULTI-TIER MOAT ISOLATION...
- Publication number 20210391345
- Publication date Dec 16, 2021
- SANDISK TECHNOLOGIES LLC
- Yoshitaka OTSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING THROUGH-MEMORY-LEVEL VIA...
- Publication number 20210384207
- Publication date Dec 9, 2021
- SANDISK TECHNOLOGIES LLC
- Takaaki IWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AUXILLIARY SUPPORT PILLA...
- Publication number 20210358941
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Kengo KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH VIA STRUCTURES SURROUNDED BY P...
- Publication number 20210210424
- Publication date Jul 8, 2021
- SANDISK TECHNOLOGIES LLC
- Yoshitaka OTSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A POLYGONAL LATTICE OF S...
- Publication number 20200303398
- Publication date Sep 24, 2020
- SANDISK TECHNOLOGIES LLC
- Yoshitaka OTSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING DOUBLE-WIDTH STAIRCASE REGIO...
- Publication number 20190348435
- Publication date Nov 14, 2019
- SANDISK TECHNOLOGIES LLC
- Koichiro Nagata
- H01 - BASIC ELECTRIC ELEMENTS

Junpei Kanazawa

Person

Patents Grantslast 30 patents

Three-dimensional memory device including through-memory-level via...

Three-dimensional memory device including multi-tier moat isolation...

Three-dimensional memory device containing auxiliary support pillar...

Three-dimensional memory device with via structures surrounded by p...

Three-dimensional memory device containing a polygonal lattice of s...

Three-dimensional memory device having double-width staircase regio...

Three-dimensional memory device containing structurally reinforced...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING MULTI-TIER MOAT ISOLATION...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING THROUGH-MEMORY-LEVEL VIA...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AUXILLIARY SUPPORT PILLA...

THREE-DIMENSIONAL MEMORY DEVICE WITH VIA STRUCTURES SURROUNDED BY P...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A POLYGONAL LATTICE OF S...

THREE-DIMENSIONAL MEMORY DEVICE HAVING DOUBLE-WIDTH STAIRCASE REGIO...