Junsuke Tomioka

Person

Hiratuska, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for predicting precipitation behavior of oxygen in silicon s...
- Patent number 8,246,744
- Issue date Aug 21, 2012
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal semiconductor manufacturing apparatus and manufactur...
- Patent number 8,241,424
- Issue date Aug 14, 2012
- Sumco Techxiv Kabushiki Kaisha
- Tetsuhiro Iida
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Control system and method for controlled object in time variant sys...
- Patent number 8,150,784
- Issue date Apr 3, 2012
- Sumco TechXIV Corporation
- Kenichi Bandoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor single crystal manufacturing apparatus and graphite c...
- Patent number 7,390,361
- Issue date Jun 24, 2008
- Sumco Techxiv Corporation
- Tetsuhiro Iida
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal silicon producing method, single crystal silicon waf...
- Patent number 7,226,506
- Issue date Jun 5, 2007
- Sumco Techxiv Corporation
- Tetsuhiro Iida
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for producing single crystal
- Patent number 6,315,827
- Issue date Nov 13, 2001
- Komatsu Electronics Metals Co., Ltd.
- Shoei Kurosaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer for hydrogen heat treatment and method for manufactur...
- Patent number 6,273,944
- Issue date Aug 14, 2001
- Komatsu Electronic Metals Co., Ltd.
- Toshiaki Saishoji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and a method of manufacturing a crystal
- Patent number 6,270,575
- Issue date Aug 7, 2001
- Komatsu Electronic Metals Co., Ltd.
- Shoei Kurosaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing single crystal
- Patent number 6,179,911
- Issue date Jan 30, 2001
- Kamatsu Electronic Metals Co., Ltd.
- Junsuke Tomioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon single crystals and wafers adapted...
- Patent number 6,179,910
- Issue date Jan 30, 2001
- Komatsu Electronic Metals Co., LTD
- Takashi Yokoyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed crystal and method of manufacturing single crystal
- Patent number 6,171,393
- Issue date Jan 9, 2001
- Komatsu Electronic Metals Co., Ltd.
- Shoei Kurosaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for pulling up single crystals and single crystal clampin...
- Patent number 6,099,642
- Issue date Aug 8, 2000
- Komatsu Electronic Metals Co., Ltd.
- Shoei Kurosaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer for hydrogen heat treatment and method for manufactur...
- Patent number 6,056,931
- Issue date May 2, 2000
- Komatsu Electronic Metal Co., Ltd.
- Toshiaki Saishoji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal pulling method
- Patent number 6,042,644
- Issue date Mar 28, 2000
- Komatsu Electronic Metals Co., Ltd.
- Shoei Kurosaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing single crystal
- Patent number 6,007,625
- Issue date Dec 28, 1999
- Komatsu Electronic Metals Co., Ltd.
- Junsuke Tomioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating silicon single crystals
- Patent number 5,968,262
- Issue date Oct 19, 1999
- Komatsu Electronic Metals Co., Ltd.
- Toshiaki Saishouji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating a single-crystal semiconductor
- Patent number 5,968,260
- Issue date Oct 19, 1999
- Komatsu Electronic Metals Co., Ltd.
- Toshiaki Saishouji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for pulling up single crystals
- Patent number 5,942,033
- Issue date Aug 24, 1999
- Komatsu Electronic Metals Co., Ltd.
- Shoei Kurosaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for manufacturing semiconductor single crystals
- Patent number 5,938,836
- Issue date Aug 17, 1999
- Komatsu Electronic Metals Co., Ltd.
- Junsuke Tomioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for lifting single crystals
- Patent number 5,885,347
- Issue date Mar 23, 1999
- Komatsu, Ltd.
- Junsuke Tomioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for pulling up a single crystal
- Patent number 5,441,014
- Issue date Aug 15, 1995
- Komatsu Electronic Metals Co., Ltd.
- Junsuke Tomioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer heat treatment method
- Patent number 5,385,115
- Issue date Jan 31, 1995
- Komatsu Electronic Metals Co., Ltd.
- Junsuke Tomioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal pulling apparatus
- Patent number 5,316,742
- Issue date May 31, 1994
- Komatsu Electronic Metals Co., Ltd.
- Junsuke Tomioka
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Control System and Method for Controlled Object in Time Variant Sys...
- Publication number 20100100217
- Publication date Apr 22, 2010
- SUMCO TECHXIV CORPORATION
- Kenichi Bandoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for predicting precipitation behavior of oxygen in silicon s...
- Publication number 20090210166
- Publication date Aug 20, 2009
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Single Crystal Semiconductor Manufacturing Apparatus and Manufactur...
- Publication number 20090133617
- Publication date May 28, 2009
- SUMCO TECHXIV KABUSHIKI KAISHA
- Tetsuhrio Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Single Crystal Manufacturing Apparatus and Graphite C...
- Publication number 20070215038
- Publication date Sep 20, 2007
- Komatsu Denskhi Kinzouku Kabushiki Kasiha
- Tetsuhiro Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal silicon producing method, single crystal silicon waf...
- Publication number 20050229840
- Publication date Oct 20, 2005
- Tetsuhiro Iida
- C30 - CRYSTAL GROWTH

Junsuke Tomioka

Person

Patents Grantslast 30 patents

Method for predicting precipitation behavior of oxygen in silicon s...

Single crystal semiconductor manufacturing apparatus and manufactur...

Control system and method for controlled object in time variant sys...

Semiconductor single crystal manufacturing apparatus and graphite c...

Single crystal silicon producing method, single crystal silicon waf...

Apparatus for producing single crystal

Silicon wafer for hydrogen heat treatment and method for manufactur...

Apparatus and a method of manufacturing a crystal

Method for manufacturing single crystal

Method for manufacturing silicon single crystals and wafers adapted...

Seed crystal and method of manufacturing single crystal

Apparatus for pulling up single crystals and single crystal clampin...

Silicon wafer for hydrogen heat treatment and method for manufactur...

Single crystal pulling method

Apparatus for manufacturing single crystal

Method of fabricating silicon single crystals

Method for fabricating a single-crystal semiconductor

Apparatus and method for pulling up single crystals

Apparatus and method for manufacturing semiconductor single crystals

Apparatus and method for lifting single crystals

Apparatus for pulling up a single crystal

Semiconductor wafer heat treatment method

Single crystal pulling apparatus

Patents Applicationslast 30 patents

Control System and Method for Controlled Object in Time Variant Sys...

Method for predicting precipitation behavior of oxygen in silicon s...

Single Crystal Semiconductor Manufacturing Apparatus and Manufactur...

Semiconductor Single Crystal Manufacturing Apparatus and Graphite C...

Single crystal silicon producing method, single crystal silicon waf...