Justin R. WEBER

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 12,119,409
- Issue date Oct 15, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor channel passivation with 2D crystalline material
- Patent number 12,107,170
- Issue date Oct 1, 2024
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked finFETs and shared gate patterning
- Patent number 12,100,623
- Issue date Sep 24, 2024
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures with a metal oxide contact buffer and a metho...
- Patent number 11,843,058
- Issue date Dec 12, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subfin leakage suppression using fixed charge
- Patent number 11,784,239
- Issue date Oct 10, 2023
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 11,764,306
- Issue date Sep 19, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked transistors in a fin
- Patent number 11,658,072
- Issue date May 23, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact stacks to reduce hydrogen in semiconductor devices
- Patent number 11,637,185
- Issue date Apr 25, 2023
- Intel Corporation
- Justin Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers on contact electrodes for thin- film transistors
- Patent number 11,522,060
- Issue date Dec 6, 2022
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked thin film transistors
- Patent number 11,462,568
- Issue date Oct 4, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked finFETs and shared gate patterning
- Patent number 11,404,319
- Issue date Aug 2, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact electrodes and dielectric structures for thin film transistors
- Patent number 11,398,560
- Issue date Jul 26, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked self-aligned transistors with single workfunction metal
- Patent number 11,362,189
- Issue date Jun 14, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures with a metal oxide contact buffer
- Patent number 11,171,243
- Issue date Nov 9, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor channel passivation with 2D crystalline material
- Patent number 11,171,239
- Issue date Nov 9, 2021
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 11,152,514
- Issue date Oct 19, 2021
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked transistors in a pin
- Patent number 11,075,119
- Issue date Jul 27, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation by fixed charge
- Patent number 10,892,335
- Issue date Jan 12, 2021
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled TFET transistor formed using nanowire with surface termination
- Patent number 10,535,770
- Issue date Jan 14, 2020
- Intel Corporation
- Uygar E. Avci
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH CAVITY SPACERS
- Publication number 20240186398
- Publication date Jun 6, 2024
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...
- Publication number 20240105854
- Publication date Mar 28, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR
- Publication number 20230352598
- Publication date Nov 2, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHITIC CARBON CONTACTS FOR DEVICES WITH OXIDE CHANNELS
- Publication number 20230102219
- Publication date Mar 30, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING
- Publication number 20220336284
- Publication date Oct 20, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE
- Publication number 20220199839
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab SEN GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CHANNEL PASSIVATION WITH 2D CRYSTALLINE MATERIAL
- Publication number 20220059702
- Publication date Feb 24, 2022
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER
- Publication number 20220052200
- Publication date Feb 17, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR
- Publication number 20210408299
- Publication date Dec 30, 2021
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED TRANSISTORS IN A FIN
- Publication number 20210351078
- Publication date Nov 11, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CHANNEL PASSIVATION WITH 2D CRYSTALLINE MATERIAL
- Publication number 20210083122
- Publication date Mar 18, 2021
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER
- Publication number 20200411692
- Publication date Dec 31, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR
- Publication number 20200357929
- Publication date Nov 12, 2020
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING OFF-STATE LEAKAGE IN SEMICONDUCTOR DEVICES
- Publication number 20200279910
- Publication date Sep 3, 2020
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING
- Publication number 20200235013
- Publication date Jul 23, 2020
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION BY FIXED CHARGE
- Publication number 20200185501
- Publication date Jun 11, 2020
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SELF-ALIGNED TRANSISTORS WITH SINGLE WORKFUNCTION METAL
- Publication number 20200105891
- Publication date Apr 2, 2020
- Aaron LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STACKS TO REDUCE HYDROGEN IN SEMICONDUCTOR DEVICES
- Publication number 20200098874
- Publication date Mar 26, 2020
- Intel Corporation
- Justin WEBER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL LAYERS ON CONTACT ELECTRODES FOR THIN-FILM TRANSISTORS
- Publication number 20200098875
- Publication date Mar 26, 2020
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ELECTRODES AND DIELECTRIC STRUCTURES FOR THIN FILM TRANSISTORS
- Publication number 20200098887
- Publication date Mar 26, 2020
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBFIN LEAKAGE SUPPRESSION USING FIXED CHARGE
- Publication number 20200044059
- Publication date Feb 6, 2020
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES FOR THIN FILM TRANSISTOR DEVICES
- Publication number 20200006570
- Publication date Jan 2, 2020
- Intel Corporation
- Van H. LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED THIN FILM TRANSISTORS
- Publication number 20190393249
- Publication date Dec 26, 2019
- Intel Corporation
- Aaron LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED TRANSISTORS IN A PIN
- Publication number 20190326175
- Publication date Oct 24, 2019
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE METAL FIELD EFFECT TRANSISTORS (MOMFETS)
- Publication number 20170358658
- Publication date Dec 14, 2017
- Intel Corporation
- Rafael RIOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED TFET TRANSISTOR FORMED USING NANOWIRE WITH SURFACE TERMINATION
- Publication number 20170271501
- Publication date Sep 21, 2017
- Intel Corporation
- Uygar E. AVCI
- H01 - BASIC ELECTRIC ELEMENTS

Justin R. WEBER

Person

Patents Grantslast 30 patents

Multi-layer crystalline back gated thin film transistor

Transistor channel passivation with 2D crystalline material

Vertically stacked finFETs and shared gate patterning

Transistor structures with a metal oxide contact buffer and a metho...

Subfin leakage suppression using fixed charge

Multi-layer crystalline back gated thin film transistor

Vertically stacked transistors in a fin

Contact stacks to reduce hydrogen in semiconductor devices

Epitaxial layers on contact electrodes for thin- film transistors

Stacked thin film transistors

Vertically stacked finFETs and shared gate patterning

Contact electrodes and dielectric structures for thin film transistors

Stacked self-aligned transistors with single workfunction metal

Transistor structures with a metal oxide contact buffer

Transistor channel passivation with 2D crystalline material

Multi-layer crystalline back gated thin film transistor

Vertically stacked transistors in a pin

Device isolation by fixed charge

Scaled TFET transistor formed using nanowire with surface termination

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES WITH CAVITY SPACERS

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...

MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR

GRAPHITIC CARBON CONTACTS FOR DEVICES WITH OXIDE CHANNELS

VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING

COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE

TRANSISTOR CHANNEL PASSIVATION WITH 2D CRYSTALLINE MATERIAL

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER

MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR

VERTICALLY STACKED TRANSISTORS IN A FIN

TRANSISTOR CHANNEL PASSIVATION WITH 2D CRYSTALLINE MATERIAL

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER

MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR

REDUCING OFF-STATE LEAKAGE IN SEMICONDUCTOR DEVICES

VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING

DEVICE ISOLATION BY FIXED CHARGE

STACKED SELF-ALIGNED TRANSISTORS WITH SINGLE WORKFUNCTION METAL

CONTACT STACKS TO REDUCE HYDROGEN IN SEMICONDUCTOR DEVICES

EPITAXIAL LAYERS ON CONTACT ELECTRODES FOR THIN-FILM TRANSISTORS

CONTACT ELECTRODES AND DIELECTRIC STRUCTURES FOR THIN FILM TRANSISTORS

SUBFIN LEAKAGE SUPPRESSION USING FIXED CHARGE

CONTACT STRUCTURES FOR THIN FILM TRANSISTOR DEVICES

STACKED THIN FILM TRANSISTORS

VERTICALLY STACKED TRANSISTORS IN A PIN

METAL OXIDE METAL FIELD EFFECT TRANSISTORS (MOMFETS)

SCALED TFET TRANSISTOR FORMED USING NANOWIRE WITH SURFACE TERMINATION