JUSTIN S. BROCKMAN

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Conductive alloy layer in magnetic memory devices and methods of fa...
- Patent number 11,770,979
- Issue date Sep 26, 2023
- Intel Corporation
- Daniel Ouellette
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices and methods of fabrication
- Patent number 11,737,368
- Issue date Aug 22, 2023
- Intel Corporation
- Daniel Ouellette
Information Patent Grant
Magnetic memory devices with a transition metal dopant at an interf...
- Patent number 11,616,192
- Issue date Mar 28, 2023
- Intel Corporation
- Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque devices with improved retention...
- Patent number 11,411,173
- Issue date Aug 9, 2022
- Intel Corporation
- Angeline Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,404,630
- Issue date Aug 2, 2022
- Intel Corporation
- Md Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices with layered electrodes and methods of fabr...
- Patent number 11,380,838
- Issue date Jul 5, 2022
- Intel Corporation
- Justin Brockman
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit torque (SOT) memory devices and methods of fabrication
- Patent number 11,362,263
- Issue date Jun 14, 2022
- Intel Corporation
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices and methods of fabrication
- Patent number 11,063,088
- Issue date Jul 13, 2021
- Intel Corporation
- Daniel Ouellette
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices with enhanced tunnel magnetoresistance rati...
- Patent number 10,943,950
- Issue date Mar 9, 2021
- Intel Corporation
- Daniel Ouellette
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory cells and precursors thereof, methods of making th...
- Patent number 10,897,009
- Issue date Jan 19, 2021
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approaches for strain engineering of perpendicular magnetic tunnel...
- Patent number 10,868,233
- Issue date Dec 15, 2020
- Intel Corporation
- Daniel G. Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PSTTM device with multi-layered filter stack
- Patent number 10,847,714
- Issue date Nov 24, 2020
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic memory with symmetric fixed layers
- Patent number 10,832,749
- Issue date Nov 10, 2020
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device, system and method for improved magnetic anisotropy of a mag...
- Patent number 10,804,460
- Issue date Oct 13, 2020
- Intel Corporation
- MD Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
PSTTM device with free magnetic layers coupled through a metal laye...
- Patent number 10,580,970
- Issue date Mar 3, 2020
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Texture breaking layer to decouple bottom electrode from PMTJ device
- Patent number 10,559,744
- Issue date Feb 11, 2020
- Intel Corporation
- Brian Maertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cells and precursors thereof, methods of making th...
- Patent number 10,516,109
- Issue date Dec 24, 2019
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random number generator
- Patent number 10,365,894
- Issue date Jul 30, 2019
- Intel Corporation
- Charles C. Kuo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
PSTTM device with bottom electrode interface material
- Patent number 10,340,445
- Issue date Jul 2, 2019
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
PSTTM device with multi-layered filter stack
- Patent number 10,326,075
- Issue date Jun 18, 2019
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
- Publication number 20210175284
- Publication date Jun 10, 2021
- Intel Corporation
- Daniel Ouellette
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
- Publication number 20200313084
- Publication date Oct 1, 2020
- Intel Corporation
- Daniel Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETORESISTANCE RATI...
- Publication number 20200312907
- Publication date Oct 1, 2020
- Intel Corporation
- Daniel Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
- Publication number 20200313074
- Publication date Oct 1, 2020
- Intel Corporation
- Angeline Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS
- Publication number 20200043536
- Publication date Feb 6, 2020
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES WITH LAYERED ELECTRODES AND METHODS OF FABR...
- Publication number 20200006634
- Publication date Jan 2, 2020
- Intel Corporation
- Justin Brockman
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
- Publication number 20200006632
- Publication date Jan 2, 2020
- Intel Corporation
- Daniel Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN ORBIT TORQUE (SOT) MEMORY DEVICES AND METHODS OF FABRICATION
- Publication number 20200006631
- Publication date Jan 2, 2020
- Intel Corporation
- Noriyuki Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
- Publication number 20200006635
- Publication date Jan 2, 2020
- Intel Corporation
- Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE DEVICES WITH IMPROVED RETENTION...
- Publication number 20190386209
- Publication date Dec 19, 2019
- Intel Corporation
- Angeline Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING TH...
- Publication number 20190348604
- Publication date Nov 14, 2019
- Intel Corporation
- NILOY MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...
- Publication number 20190334079
- Publication date Oct 31, 2019
- Intel Corporation
- MD Tofizur RAHMAN
- G11 - INFORMATION STORAGE
Information Patent Application
PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK
- Publication number 20190288190
- Publication date Sep 19, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM
- Publication number 20190280188
- Publication date Sep 12, 2019
- Intel Corporation
- Justin BROCKMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAG...
- Publication number 20190140166
- Publication date May 9, 2019
- Intel Corporation
- MD Tofizur RAHMAN
- G11 - INFORMATION STORAGE
Information Patent Application
TEXTURE BREAKING LAYER TO DECOUPLE BOTTOM ELECTRODE FROM PMTJ DEVICE
- Publication number 20190036010
- Publication date Jan 31, 2019
- Intel Corporation
- Brian MAERTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACHES FOR STRAIN ENGINEERING OF PERPENDICULAR MAGNETIC TUNNEL...
- Publication number 20190027679
- Publication date Jan 24, 2019
- Intel Corporation
- Daniel G. OUELLETTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSTTM DEVICE WITH BOTTOM ELECTRODE INTERFACE MATERIAL
- Publication number 20180248115
- Publication date Aug 30, 2018
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Application
PSTTM DEVICE WITH FREE MAGNETIC LAYERS COUPLED THROUGH A METAL LAYE...
- Publication number 20180248114
- Publication date Aug 30, 2018
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Application
PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK
- Publication number 20180240970
- Publication date Aug 23, 2018
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RANDOM NUMBER GENERATOR
- Publication number 20180165065
- Publication date Jun 14, 2018
- Intel Corporation
- Charles C. KUO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING TH...
- Publication number 20180062077
- Publication date Mar 1, 2018
- Intel Corporation
- NILOY MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS

JUSTIN S. BROCKMAN

Person

Patents Grantslast 30 patents

Conductive alloy layer in magnetic memory devices and methods of fa...

Magnetic memory devices and methods of fabrication

Magnetic memory devices with a transition metal dopant at an interf...

Perpendicular spin transfer torque magnetic mechanism

Perpendicular spin transfer torque devices with improved retention...

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Magnetic memory devices with layered electrodes and methods of fabr...

Spin orbit torque (SOT) memory devices and methods of fabrication

Magnetic memory devices and methods of fabrication

Magnetic memory devices with enhanced tunnel magnetoresistance rati...

Resistive memory cells and precursors thereof, methods of making th...

Approaches for strain engineering of perpendicular magnetic tunnel...

PSTTM device with multi-layered filter stack

Perpendicular magnetic memory with symmetric fixed layers

Device, system and method for improved magnetic anisotropy of a mag...

PSTTM device with free magnetic layers coupled through a metal laye...

Texture breaking layer to decouple bottom electrode from PMTJ device

Resistive memory cells and precursors thereof, methods of making th...

Random number generator

PSTTM device with bottom electrode interface material

PSTTM device with multi-layered filter stack

Patents Applicationslast 30 patents

MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION

MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION

MAGNETIC MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETORESISTANCE RATI...

MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION

PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS

MAGNETIC MEMORY DEVICES WITH LAYERED ELECTRODES AND METHODS OF FABR...

MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION

SPIN ORBIT TORQUE (SOT) MEMORY DEVICES AND METHODS OF FABRICATION

MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION

PERPENDICULAR SPIN TRANSFER TORQUE DEVICES WITH IMPROVED RETENTION...

RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING TH...

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...

PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK

PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM

DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAG...

TEXTURE BREAKING LAYER TO DECOUPLE BOTTOM ELECTRODE FROM PMTJ DEVICE

APPROACHES FOR STRAIN ENGINEERING OF PERPENDICULAR MAGNETIC TUNNEL...

PSTTM DEVICE WITH BOTTOM ELECTRODE INTERFACE MATERIAL

PSTTM DEVICE WITH FREE MAGNETIC LAYERS COUPLED THROUGH A METAL LAYE...

PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK

RANDOM NUMBER GENERATOR

RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING TH...