Justin Sandford

Person

Tualatin, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET based capacitors and resistors and related apparatuses, syst...
- Patent number 11,393,934
- Issue date Jul 19, 2022
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technologies for selectively etching oxide and nitride materials an...
- Patent number 10,777,421
- Issue date Sep 15, 2020
- Intel Corporation
- Jason A. Farmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate fins with different heights
- Patent number 8,629,039
- Issue date Jan 14, 2014
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate fins with different heights
- Patent number 8,441,074
- Issue date May 14, 2013
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with high-k dielectric spacer liner to mitigate lateral...
- Patent number 7,768,079
- Issue date Aug 3, 2010
- Intel Corporation
- Justin S. Sandford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled implantation for removal of thin film layers
- Patent number 7,595,248
- Issue date Sep 29, 2009
- Intel Corporation
- Michael L. Hattendorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming MOSFET gate electrodes having reduced depletion r...
- Patent number 6,362,034
- Issue date Mar 26, 2002
- Intel Corporation
- Justin S. Sandford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a MOS transistor with a raised source/drain e...
- Patent number 6,121,100
- Issue date Sep 19, 2000
- Intel Corporation
- Ebrahim Andideh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONDUCTIVE VIA BAR SELF-ALIGNED TO GATE END
- Publication number 20220399445
- Publication date Dec 15, 2022
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET BASED CAPACITORS AND RESISTORS AND RELATED APPARATUSES, SYST...
- Publication number 20200235249
- Publication date Jul 23, 2020
- Intel Corporation
- Ayan KAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR SELECTIVELY ETCHING OXIDE AND NITRIDE MATERIALS AN...
- Publication number 20180005841
- Publication date Jan 4, 2018
- Intel Corporation
- JASON A. FARMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR SELECTIVELY ETCHING OXIDE AND NITRIDE MATERIALS AN...
- Publication number 20170004975
- Publication date Jan 5, 2017
- Intel Corporation
- JASON A. FARMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AREA SCALING ON TRIGATE TRANSISTORS
- Publication number 20130320453
- Publication date Dec 5, 2013
- Abhijit Jayant Pethe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE FINS WITH DIFFERENT HEIGHTS
- Publication number 20130273710
- Publication date Oct 17, 2013
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple transistor fin heights
- Publication number 20110147848
- Publication date Jun 23, 2011
- Kelin J. Kuhn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE FINS WITH DIFFERENT HEIGHTS
- Publication number 20100276756
- Publication date Nov 4, 2010
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate fins with different heights
- Publication number 20090321834
- Publication date Dec 31, 2009
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING HIGH STRESS CAP LAYER IN HIGH-K METAL GATE TRANSISTOR
- Publication number 20090283922
- Publication date Nov 19, 2009
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH HIGH-K DIELECTRIC SPACER LINER TO MITIGATE LATERAL...
- Publication number 20090079014
- Publication date Mar 26, 2009
- Justin S. Sandford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Angled implantation for removal of thin film layers
- Publication number 20090057788
- Publication date Mar 5, 2009
- Michael L. Hattendorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEALING SPACER TO REDUCE OR ELIMINATE LATERAL OXIDATION OF A HIGH-K...
- Publication number 20070262399
- Publication date Nov 15, 2007
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Angled implantation for removal of thin film layers
- Publication number 20070126067
- Publication date Jun 7, 2007
- Intel Corporation
- Michael L. Hattendorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of active temperature control to provide emmisivity independent...
- Publication number 20060286807
- Publication date Dec 21, 2006
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of active temperature control to provide emmisivity independent...
- Publication number 20060004493
- Publication date Jan 5, 2006
- Jack Hwang
- G05 - CONTROLLING REGULATING

Justin Sandford

Person

Patents Grantslast 30 patents

FinFET based capacitors and resistors and related apparatuses, syst...

Technologies for selectively etching oxide and nitride materials an...

Substrate fins with different heights

Substrate fins with different heights

Transistors with high-k dielectric spacer liner to mitigate lateral...

Angled implantation for removal of thin film layers

Method of forming MOSFET gate electrodes having reduced depletion r...

Method of fabricating a MOS transistor with a raised source/drain e...

Patents Applicationslast 30 patents

CONDUCTIVE VIA BAR SELF-ALIGNED TO GATE END

FINFET BASED CAPACITORS AND RESISTORS AND RELATED APPARATUSES, SYST...

TECHNOLOGIES FOR SELECTIVELY ETCHING OXIDE AND NITRIDE MATERIALS AN...

TECHNOLOGIES FOR SELECTIVELY ETCHING OXIDE AND NITRIDE MATERIALS AN...

AREA SCALING ON TRIGATE TRANSISTORS

SUBSTRATE FINS WITH DIFFERENT HEIGHTS

Multiple transistor fin heights

SUBSTRATE FINS WITH DIFFERENT HEIGHTS

Substrate fins with different heights

INTEGRATING HIGH STRESS CAP LAYER IN HIGH-K METAL GATE TRANSISTOR

TRANSISTORS WITH HIGH-K DIELECTRIC SPACER LINER TO MITIGATE LATERAL...

Angled implantation for removal of thin film layers

SEALING SPACER TO REDUCE OR ELIMINATE LATERAL OXIDATION OF A HIGH-K...

Angled implantation for removal of thin film layers

Use of active temperature control to provide emmisivity independent...

Use of active temperature control to provide emmisivity independent...