Jyun-Ze Lin

Person

Sansing Township, Yilan County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Trench capacitor profile to decrease substrate warpage
- Patent number 11,769,792
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low warpage high density trench capacitor
- Patent number 11,688,762
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gradient doped region of recessed Fin forming a FinFET device
- Patent number 11,133,415
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jyun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor profile to decrease substrate warpage
- Patent number 11,063,157
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low warpage high density trench capacitor
- Patent number 10,868,110
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gradient doped region of recessed fin forming a FinFET device
- Patent number 10,763,363
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jyun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film scheme for a high density trench capacitor
- Patent number 10,693,019
- Issue date Jun 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low warpage high density trench capacitor
- Patent number 10,276,651
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low impedance high density deep trench capacitor
- Patent number 9,978,829
- Issue date May 22, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell
- Patent number 8,962,439
- Issue date Feb 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fuse device
- Patent number 8,853,079
- Issue date Oct 7, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programmable devices and methods of forming the same
- Patent number 8,653,623
- Issue date Feb 18, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High intensity LED
- Patent number 7,067,848
- Issue date Jun 27, 2006
- Wen-Jen Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEEP TRENCH CAPACITOR AND METHOD FOR FORMING THE SAME
- Publication number 20240147689
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hsun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE
- Publication number 20240014254
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Chen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE
- Publication number 20230378251
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Warpage High Density Trench Capacitor
- Publication number 20230361166
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIXEL ARRAY INCLUDING AIR GAP REFLECTION STRUCTURES
- Publication number 20220165776
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Jyun-Hao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE
- Publication number 20210343881
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE
- Publication number 20210202761
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW WARPAGE HIGH DENSITY TRENCH CAPACITOR
- Publication number 20210104598
- Publication date Apr 8, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gradient Doped Region of Recessed Fin Forming a FinFET Device
- Publication number 20200395481
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyun-Hao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM SCHEME FOR A HIGH DENSITY TRENCH CAPACITOR
- Publication number 20200066922
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gradient Doped Region of Recessed Fin Forming a FinFET Device
- Publication number 20190312143
- Publication date Oct 10, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyun-Hao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW WARPAGE HIGH DENSITY TRENCH CAPACITOR
- Publication number 20190245031
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW WARPAGE HIGH DENSITY TRENCH CAPACITOR
- Publication number 20190074349
- Publication date Mar 7, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW IMPEDANCE HIGH DENSITY DEEP TRENCH CAPACITOR
- Publication number 20160020267
- Publication date Jan 21, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Jyun-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL
- Publication number 20140346655
- Publication date Nov 27, 2014
- Jyun-Ying LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH STRUCTURE FOR HIGH DENSITY CAPACITOR
- Publication number 20140145299
- Publication date May 29, 2014
- Taiwan Semiconductor Manufacturing Co., LTD
- Alex Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSE DEVICE
- Publication number 20140124891
- Publication date May 8, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-Ying LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-TIME PROGRAMMABLE DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20120256293
- Publication date Oct 11, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-Ying LIN
- H01 - BASIC ELECTRIC ELEMENTS

Jyun-Ze Lin

Person

Patents Grantslast 30 patents

Trench capacitor profile to decrease substrate warpage

Low warpage high density trench capacitor

Gradient doped region of recessed Fin forming a FinFET device

Trench capacitor profile to decrease substrate warpage

Low warpage high density trench capacitor

Gradient doped region of recessed fin forming a FinFET device

Film scheme for a high density trench capacitor

Low warpage high density trench capacitor

Low impedance high density deep trench capacitor

Memory cell

Fuse device

One-time programmable devices and methods of forming the same

High intensity LED

Patents Applicationslast 30 patents

DEEP TRENCH CAPACITOR AND METHOD FOR FORMING THE SAME

TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE

TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE

Low Warpage High Density Trench Capacitor

PIXEL ARRAY INCLUDING AIR GAP REFLECTION STRUCTURES

TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE

TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE

LOW WARPAGE HIGH DENSITY TRENCH CAPACITOR

Gradient Doped Region of Recessed Fin Forming a FinFET Device

FILM SCHEME FOR A HIGH DENSITY TRENCH CAPACITOR

Gradient Doped Region of Recessed Fin Forming a FinFET Device

LOW WARPAGE HIGH DENSITY TRENCH CAPACITOR

LOW WARPAGE HIGH DENSITY TRENCH CAPACITOR

LOW IMPEDANCE HIGH DENSITY DEEP TRENCH CAPACITOR

MEMORY CELL

DEEP TRENCH STRUCTURE FOR HIGH DENSITY CAPACITOR

FUSE DEVICE

ONE-TIME PROGRAMMABLE DEVICES AND METHODS OF FORMING THE SAME