Kaan Oguz

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic memory stack
- Patent number 12,058,847
- Issue date Aug 6, 2024
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide based spin orbit torque memory device
- Patent number 12,009,018
- Issue date Jun 11, 2024
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Nano-rod spin orbit coupling based magnetic random access memory wi...
- Patent number 11,818,963
- Issue date Nov 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Transition metal dichalcogenide based magnetoelectric memory device
- Patent number 11,696,514
- Issue date Jul 4, 2023
- Intel Corporation
- Chia-Ching Lin
Information Patent Grant
Spin orbit memory devices with dual electrodes, and methods of fabr...
- Patent number 11,683,939
- Issue date Jun 20, 2023
- Intel Corporation
- Benjamin Buford
Information Patent Grant
Ferroelectric field effect transistors (FeFETs) having band-enginee...
- Patent number 11,640,995
- Issue date May 2, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device with ruthenium diffusion barrier
- Patent number 11,626,451
- Issue date Apr 11, 2023
- Intel Corporation
- Emily Walker
- G11 - INFORMATION STORAGE
Information Patent Grant
Antiferromagnet based spin orbit torque memory device
- Patent number 11,621,391
- Issue date Apr 4, 2023
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Two terminal spin orbit memory devices and methods of fabrication
- Patent number 11,594,673
- Issue date Feb 28, 2023
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque memory devices and methods of fabrication
- Patent number 11,574,666
- Issue date Feb 7, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Insertion layer between spin hall effect or spin orbit torque elect...
- Patent number 11,575,083
- Issue date Feb 7, 2023
- Intel Corporation
- Tanay Gosavi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin orbit memory devices with reduced magnetic moment and methods...
- Patent number 11,557,629
- Issue date Jan 17, 2023
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque device with insertion layer between spin orbit to...
- Patent number 11,508,903
- Issue date Nov 22, 2022
- Intel Corporation
- Angeline Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for boosting signal in magnetoelectric spin or...
- Patent number 11,502,188
- Issue date Nov 15, 2022
- Intel Corporation
- Chia-Ching Lin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular exchange bias with antiferromagnet for spin orbit cou...
- Patent number 11,476,412
- Issue date Oct 18, 2022
- Intel Corporation
- Tanay Gosavi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,462,678
- Issue date Oct 4, 2022
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices and methods of fabrication
- Patent number 11,444,237
- Issue date Sep 13, 2022
- Intel Corporation
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer free magnetic layer structure for spin-based magnetic me...
- Patent number 11,430,942
- Issue date Aug 30, 2022
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...
- Patent number 11,430,943
- Issue date Aug 30, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetically doped spin orbit torque electrode for perpendicular ma...
- Patent number 11,417,830
- Issue date Aug 16, 2022
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,404,630
- Issue date Aug 2, 2022
- Intel Corporation
- Md Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Transition metal dichalcogenide based spin orbit torque memory device
- Patent number 11,393,515
- Issue date Jul 19, 2022
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level magnetic tunnel junction (MTJ) devices including mobile...
- Patent number 11,386,951
- Issue date Jul 12, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer spin orbit torque electrodes for perpendicular magnetic...
- Patent number 11,374,164
- Issue date Jun 28, 2022
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices and their methods of fabrica...
- Patent number 11,367,749
- Issue date Jun 21, 2022
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices and methods of fabrication
- Patent number 11,362,263
- Issue date Jun 14, 2022
- Intel Corporation
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit torque (SOT) memory device with self-aligned contacts an...
- Patent number 11,348,970
- Issue date May 31, 2022
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular STTM multi-layer insert free layer
- Patent number 11,295,884
- Issue date Apr 5, 2022
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240147867
- Publication date May 2, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411278
- Publication date Dec 21, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL...
- Publication number 20230402499
- Publication date Dec 14, 2023
- Intel Corporation
- Thomas Sounart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH HIGH-K PEROVSKITE GATE DIELECTRICS
- Publication number 20230253476
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS
- Publication number 20230253444
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH PEROVSKITE FILMS
- Publication number 20230200081
- Publication date Jun 22, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...
- Publication number 20230200079
- Publication date Jun 22, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET-BASED PROBABILISTIC COMPUTING DEVICES
- Publication number 20230189659
- Publication date Jun 15, 2023
- Intel Corporation
- Punyashloka Debashis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH...
- Publication number 20230147275
- Publication date May 11, 2023
- Intel Corporation
- Charles Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...
- Publication number 20230098594
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER CAPACITOR WITH EDGE INSULATOR
- Publication number 20230102177
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K OR FERROELECTRIC GATE OXIDE WITH ZERO-SIO2 IL PROCESS FOR TR...
- Publication number 20230100952
- Publication date Mar 30, 2023
- Intel Corporation
- I-Cheng TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GROWTH OF HIGH-K OXIDE ON CHANNEL OF GATE-ALL-AROUND TRAN...
- Publication number 20230100505
- Publication date Mar 30, 2023
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC SPIN-ORBIT LOGIC DEVICE WITH A TOPOLOGICAL INSULATO...
- Publication number 20230086080
- Publication date Mar 23, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH DUAL DIELECTRIC LAYERS
- Publication number 20230087624
- Publication date Mar 23, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIALLY PROGRAMMABLE MAGNETIC TUNNEL JUNCTION DEVICE AND SYS...
- Publication number 20230065198
- Publication date Mar 2, 2023
- Intel Corporation
- Ian Alexander Young
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSITION METAL DICHALCOGENIDE BASED SPIN ORBIT TORQUE MEMORY DEVICE
- Publication number 20220310147
- Publication date Sep 29, 2022
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN ORBIT TORQUE DEVICE WITH TOPOLOGICAL INSULATOR AND HEAVY METAL...
- Publication number 20220310901
- Publication date Sep 29, 2022
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE
- Publication number 20220199839
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab SEN GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR OR BACKEND TRANSISTOR HAVING...
- Publication number 20220199756
- Publication date Jun 23, 2022
- Intel Corporation
- I-Cheng TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET
- Publication number 20220199801
- Publication date Jun 23, 2022
- Intel Corporation
- Prashant MAJHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR WITH PEROVSKITE DIELECTRIC
- Publication number 20220199519
- Publication date Jun 23, 2022
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON ELECTRODES FOR FERROELECTRIC CAPACITORS
- Publication number 20220199758
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION
- Publication number 20220199609
- Publication date Jun 23, 2022
- Intel Corporation
- Urusa ALAAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITORS WITH BUILT-IN ELECTRIC FIELDS
- Publication number 20220181433
- Publication date Jun 9, 2022
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO-ROD SPIN ORBIT COUPLING BASED MAGNETIC RANDOM ACCESS MEMORY WI...
- Publication number 20220140230
- Publication date May 5, 2022
- Intel Corporation
- Sasikanth MANIPATRUNI
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSITION METAL DICHALCOGENIDE BASED MAGNETO-ELECTRIC MEMORY DEVICE
- Publication number 20220123206
- Publication date Apr 21, 2022
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE THIN FILM CAPACITORS USING TITANIUM OXIDE DIELECTRIC WI...
- Publication number 20220102483
- Publication date Mar 31, 2022
- Intel Corporation
- Thomas Sounart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE BOTTOM ELECTRODE FOR PEROVSKITE CAPACITORS AND METHODS...
- Publication number 20210408224
- Publication date Dec 30, 2021
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Crystalline bottom electrode for perovskite capacitors and methods...

Monolithic memory stack

Transition metal dichalcogenide based spin orbit torque memory device

Nano-rod spin orbit coupling based magnetic random access memory wi...

Transition metal dichalcogenide based magnetoelectric memory device

Spin orbit memory devices with dual electrodes, and methods of fabr...

Ferroelectric field effect transistors (FeFETs) having band-enginee...

Magnetic memory device with ruthenium diffusion barrier

Antiferromagnet based spin orbit torque memory device

Two terminal spin orbit memory devices and methods of fabrication

Spin orbit torque memory devices and methods of fabrication

Insertion layer between spin hall effect or spin orbit torque elect...

Spin orbit memory devices with reduced magnetic moment and methods...

Spin orbit torque device with insertion layer between spin orbit to...

Apparatus and method for boosting signal in magnetoelectric spin or...

Perpendicular exchange bias with antiferromagnet for spin orbit cou...

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Spin orbit torque (SOT) memory devices and methods of fabrication

Perpendicular spin transfer torque magnetic mechanism

Multilayer free magnetic layer structure for spin-based magnetic me...

Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...

Magnetically doped spin orbit torque electrode for perpendicular ma...

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Transition metal dichalcogenide based spin orbit torque memory device

Multi-level magnetic tunnel junction (MTJ) devices including mobile...

Multi-layer spin orbit torque electrodes for perpendicular magnetic...

Spin orbit torque (SOT) memory devices and their methods of fabrica...

Spin orbit torque (SOT) memory devices and methods of fabrication

Spin orbit torque (SOT) memory device with self-aligned contacts an...

Perpendicular STTM multi-layer insert free layer

Patents Applicationslast 30 patents

MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL...

TRANSISTOR DEVICES WITH HIGH-K PEROVSKITE GATE DIELECTRICS

CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS

TRANSISTOR DEVICES WITH PEROVSKITE FILMS

FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...

SYNTHETIC ANTIFERROMAGNET-BASED PROBABILISTIC COMPUTING DEVICES

MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH...

CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...

MULTILAYER CAPACITOR WITH EDGE INSULATOR

HIGH-K OR FERROELECTRIC GATE OXIDE WITH ZERO-SIO2 IL PROCESS FOR TR...

SELECTIVE GROWTH OF HIGH-K OXIDE ON CHANNEL OF GATE-ALL-AROUND TRAN...

MAGNETOELECTRIC SPIN-ORBIT LOGIC DEVICE WITH A TOPOLOGICAL INSULATO...

CAPACITOR WITH DUAL DIELECTRIC LAYERS

DIFFERENTIALLY PROGRAMMABLE MAGNETIC TUNNEL JUNCTION DEVICE AND SYS...

TRANSITION METAL DICHALCOGENIDE BASED SPIN ORBIT TORQUE MEMORY DEVICE

SPIN ORBIT TORQUE DEVICE WITH TOPOLOGICAL INSULATOR AND HEAVY METAL...

COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE

METAL INSULATOR METAL (MIM) CAPACITOR OR BACKEND TRANSISTOR HAVING...

NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET

METAL INSULATOR METAL (MIM) CAPACITOR WITH PEROVSKITE DIELECTRIC

CARBON ELECTRODES FOR FERROELECTRIC CAPACITORS

NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION

CAPACITORS WITH BUILT-IN ELECTRIC FIELDS

NANO-ROD SPIN ORBIT COUPLING BASED MAGNETIC RANDOM ACCESS MEMORY WI...

TRANSITION METAL DICHALCOGENIDE BASED MAGNETO-ELECTRIC MEMORY DEVICE

LOW LEAKAGE THIN FILM CAPACITORS USING TITANIUM OXIDE DIELECTRIC WI...

CRYSTALLINE BOTTOM ELECTRODE FOR PEROVSKITE CAPACITORS AND METHODS...