Kai Frohberg

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a semiconductor device and according semiconducto...
- Patent number 9,761,689
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES Inc.
- Dominic Thurmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising contact structures with protection...
- Patent number 9,590,056
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming protection layers on sidewalls of contact etch...
- Patent number 9,269,809
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization system of a semiconductor device including metal pill...
- Patent number 9,245,860
- Issue date Jan 26, 2016
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile nitride profile shaper etch to provide void free gapfill
- Patent number 9,196,684
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with close electrical contacts and methods for...
- Patent number 9,159,661
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES, INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fuses in a semiconductor device comprising metal gates
- Patent number 9,153,684
- Issue date Oct 6, 2015
- GLOBALFOUNDRIES Inc.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively removing a spacer in a dual stress liner app...
- Patent number 9,006,114
- Issue date Apr 14, 2015
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried sublevel metallizations for improved transistor density
- Patent number 8,941,182
- Issue date Jan 27, 2015
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K gate electrode structure formed after transistor fabrication...
- Patent number 8,883,582
- Issue date Nov 11, 2014
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedding metal silicide contact regions reliably into highly doped...
- Patent number 8,877,597
- Issue date Nov 4, 2014
- GLOBALFOUNDRIES Inc.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming conductive structures using a dual metal hard ma...
- Patent number 8,859,418
- Issue date Oct 14, 2014
- GLOBALFOUNDRIES Inc.
- Torsten Huisinga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing adhesion of interlayer dielectric materials of semiconduc...
- Patent number 8,859,398
- Issue date Oct 14, 2014
- GLOBALFOUNDRIES Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization system of a semiconductor device comprising extra-tap...
- Patent number 8,835,303
- Issue date Sep 16, 2014
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Restricted stress regions formed in the contact level of a semicond...
- Patent number 8,828,887
- Issue date Sep 9, 2014
- GLOBALFOUNDRIE Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including ultra low-K (ULK) metallization stac...
- Patent number 8,786,088
- Issue date Jul 22, 2014
- GLOBALFOUNDRIES Inc.
- Torsten Huisinga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a dielectric interlayer above a structure inc...
- Patent number 8,772,178
- Issue date Jul 8, 2014
- GLOBALFOUNDRIES Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing penetration depth of drain and source implant...
- Patent number 8,735,237
- Issue date May 27, 2014
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced topography in isolation regions of a semiconductor device b...
- Patent number 8,722,511
- Issue date May 13, 2014
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI semiconductor device comprising a substrate diode with reduced...
- Patent number 8,673,696
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual contact metallization including electroless plating in a semic...
- Patent number 8,658,494
- Issue date Feb 25, 2014
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a buried waveguide for device inter...
- Patent number 8,615,145
- Issue date Dec 24, 2013
- GLOBALFOUNDRIES Inc.
- Uwe Griebenow
- G02 - OPTICS
Information Patent Grant
Method for making semiconductor device comprising replacement gate...
- Patent number 8,609,524
- Issue date Dec 17, 2013
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact elements of semiconductor devices comprising a continuous t...
- Patent number 8,580,684
- Issue date Nov 12, 2013
- GLOBALFOUNDRIES Inc.
- Robert Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective shrinkage of contact elements in a semiconductor device
- Patent number 8,536,050
- Issue date Sep 17, 2013
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising contact elements with silicided sid...
- Patent number 8,536,052
- Issue date Sep 17, 2013
- GLOBALFOUNDRIES Inc.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid contact structure with low aspect ratio contacts in a semico...
- Patent number 8,492,269
- Issue date Jul 23, 2013
- GLOBALFOUNDRIES Inc.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming conductive contacts with reduced dimensions
- Patent number 8,492,217
- Issue date Jul 23, 2013
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K gate electrode structure formed after transistor fabrication...
- Patent number 8,470,661
- Issue date Jun 25, 2013
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for MOS devices by adapting a spacer width pri...
- Patent number 8,440,534
- Issue date May 14, 2013
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION...
- Publication number 20160099321
- Publication date Apr 7, 2016
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE AND ACCORDING SEMICONDUCTO...
- Publication number 20160079086
- Publication date Mar 17, 2016
- GLOBALFOUNDRIES INC.
- Dominic Thurmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE NITRIDE PROFILE SHAPER ETCH TO PROVIDE VOID FREE GAPFILL
- Publication number 20150303261
- Publication date Oct 22, 2015
- GLOBALFOUNDRIES INC.
- Kai FROHBERG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH CLOSE ELECTRICAL CONTACTS AND METHODS FOR...
- Publication number 20150137385
- Publication date May 21, 2015
- GLOBALFOUNDRIES, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH STRAINED SILICON AND METHODS FOR FABRICATI...
- Publication number 20150076559
- Publication date Mar 19, 2015
- GLOBALFOUNDRIES, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION...
- Publication number 20140264641
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION...
- Publication number 20130252409
- Publication date Sep 26, 2013
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING INTEGRATED CIRCUITS WITH THE ELIMINATION OF...
- Publication number 20130189822
- Publication date Jul 25, 2013
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Conductive Structures Using a Dual Metal Hard Ma...
- Publication number 20130178057
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES INC.
- Torsten Huisinga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FUSES IN A SEMICONDUCTOR DEVICE COMPRISING METAL GATES
- Publication number 20130140645
- Publication date Jun 6, 2013
- GLOBALFOUNDRIES INC.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING PATTERNING VARIABILITY OF TRENCHES IN METALLIZATION LAYER...
- Publication number 20130130498
- Publication date May 23, 2013
- GLOBALFOUNDRIES INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESTRICTED STRESS REGIONS FORMED IN THE CONTACT LEVEL OF A SEMICOND...
- Publication number 20130084703
- Publication date Apr 4, 2013
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CONDUCTIVE CONTACTS WITH REDUCED DIMENSIONS
- Publication number 20130072016
- Publication date Mar 21, 2013
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Sublevel Metallizations for Improved Transistor Density
- Publication number 20120313176
- Publication date Dec 13, 2012
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANT...
- Publication number 20120256240
- Publication date Oct 11, 2012
- Advanced Micro Devices, Inc.
- UWE GRIEBENOW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...
- Publication number 20120223388
- Publication date Sep 6, 2012
- GLOBALFOUNDRIES, INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI Semiconductor Device Comprising a Substrate Diode with Reduced...
- Publication number 20120217582
- Publication date Aug 30, 2012
- GLOBALFOUNDRIES INC.
- Peter BAARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CONTACT STRUCTURE WITH LOW ASPECT RATIO CONTACTS IN A SEMICO...
- Publication number 20120181692
- Publication date Jul 19, 2012
- GLOBALFOUNDRIES Inc.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Contact Elements with Silicided Sid...
- Publication number 20120161324
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedding Metal Silicide Contact Regions Reliably Into Highly Doped...
- Publication number 20120161210
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Contact Structure with Reduced Pa...
- Publication number 20120153405
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Metal Silicide Regions
- Publication number 20120115326
- Publication date May 10, 2012
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Semiconductor Device Comprising a Protection Layer for R...
- Publication number 20120091535
- Publication date Apr 19, 2012
- GLOBALFOUNDRIES INC.
- Kai FROHBERG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Topography in Isolation Regions of a Semiconductor Device b...
- Publication number 20120025318
- Publication date Feb 2, 2012
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT STRUCTURE LATERALLY ENCLOSED BY AN ISOLATION S...
- Publication number 20120021581
- Publication date Jan 26, 2012
- GLOBAL FOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Ultra Low-K (ULK) Metallization Stac...
- Publication number 20120001323
- Publication date Jan 5, 2012
- GLOBALFOUNDRIES INC.
- Torsten Huisinga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Gate Approach for High-K Metal Gate Stacks Based on a N...
- Publication number 20120001263
- Publication date Jan 5, 2012
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Shrinkage of Contact Elements in a Semiconductor Device
- Publication number 20110291292
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Contact Elements and Metal Silicide...
- Publication number 20110266638
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Capacitor in the Metallization Sy...
- Publication number 20110241167
- Publication date Oct 6, 2011
- GLOBALFOUNDRIES INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS

Kai Frohberg

Person

Patents Grantslast 30 patents

Method of forming a semiconductor device and according semiconducto...

Semiconductor device comprising contact structures with protection...

Methods for forming protection layers on sidewalls of contact etch...

Metallization system of a semiconductor device including metal pill...

Tensile nitride profile shaper etch to provide void free gapfill

Integrated circuits with close electrical contacts and methods for...

Semiconductor fuses in a semiconductor device comprising metal gates

Method for selectively removing a spacer in a dual stress liner app...

Buried sublevel metallizations for improved transistor density

High-K gate electrode structure formed after transistor fabrication...

Embedding metal silicide contact regions reliably into highly doped...

Methods of forming conductive structures using a dual metal hard ma...

Enhancing adhesion of interlayer dielectric materials of semiconduc...

Metallization system of a semiconductor device comprising extra-tap...

Restricted stress regions formed in the contact level of a semicond...

Semiconductor device including ultra low-K (ULK) metallization stac...

Technique for forming a dielectric interlayer above a structure inc...

Method for increasing penetration depth of drain and source implant...

Reduced topography in isolation regions of a semiconductor device b...

SOI semiconductor device comprising a substrate diode with reduced...

Dual contact metallization including electroless plating in a semic...

Semiconductor device comprising a buried waveguide for device inter...

Method for making semiconductor device comprising replacement gate...

Contact elements of semiconductor devices comprising a continuous t...

Selective shrinkage of contact elements in a semiconductor device

Semiconductor device comprising contact elements with silicided sid...

Hybrid contact structure with low aspect ratio contacts in a semico...

Methods of forming conductive contacts with reduced dimensions

High-K gate electrode structure formed after transistor fabrication...

Threshold adjustment for MOS devices by adapting a spacer width pri...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION...

METHOD OF FORMING A SEMICONDUCTOR DEVICE AND ACCORDING SEMICONDUCTO...

TENSILE NITRIDE PROFILE SHAPER ETCH TO PROVIDE VOID FREE GAPFILL

INTEGRATED CIRCUITS WITH CLOSE ELECTRICAL CONTACTS AND METHODS FOR...

INTEGRATED CIRCUITS WITH STRAINED SILICON AND METHODS FOR FABRICATI...

SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION...

HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION...

METHODS OF FABRICATING INTEGRATED CIRCUITS WITH THE ELIMINATION OF...

Methods of Forming Conductive Structures Using a Dual Metal Hard Ma...

SEMICONDUCTOR FUSES IN A SEMICONDUCTOR DEVICE COMPRISING METAL GATES

REDUCING PATTERNING VARIABILITY OF TRENCHES IN METALLIZATION LAYER...

RESTRICTED STRESS REGIONS FORMED IN THE CONTACT LEVEL OF A SEMICOND...

METHODS OF FORMING CONDUCTIVE CONTACTS WITH REDUCED DIMENSIONS

Buried Sublevel Metallizations for Improved Transistor Density

METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANT...

SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...

SOI Semiconductor Device Comprising a Substrate Diode with Reduced...

HYBRID CONTACT STRUCTURE WITH LOW ASPECT RATIO CONTACTS IN A SEMICO...

Semiconductor Device Comprising Contact Elements with Silicided Sid...

Embedding Metal Silicide Contact Regions Reliably Into Highly Doped...

Semiconductor Device Comprising a Contact Structure with Reduced Pa...

Method of Forming Metal Silicide Regions

Method and Semiconductor Device Comprising a Protection Layer for R...

Reduced Topography in Isolation Regions of a Semiconductor Device b...

SELF-ALIGNED CONTACT STRUCTURE LATERALLY ENCLOSED BY AN ISOLATION S...

Semiconductor Device Including Ultra Low-K (ULK) Metallization Stac...

Replacement Gate Approach for High-K Metal Gate Stacks Based on a N...

Selective Shrinkage of Contact Elements in a Semiconductor Device

Semiconductor Device Comprising Contact Elements and Metal Silicide...

Semiconductor Device Comprising a Capacitor in the Metallization Sy...