Kai Han

Follow

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming top select gate trenches
- Patent number 12,021,126
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having adjoined source contact stru...
- Patent number 11,985,826
- Issue date May 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lu Zhang
Information Patent Grant
Memory device and fabrication method thereof
- Patent number 11,818,891
- Issue date Nov 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Kai Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having adjoined source contact stru...
- Patent number 11,665,901
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and fabrication method thereof
- Patent number 11,404,438
- Issue date Aug 2, 2022
- Yangtze Memory Technologies Co., Ltd.
- Kai Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20240304693
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220302167
- Publication date Sep 22, 2022
- Yangtze Memory Technologies Co., Ltd.
- Kai HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20220085181
- Publication date Mar 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220052070
- Publication date Feb 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Kai HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING ADJOINED SOURCE CONTACT STRU...
- Publication number 20210335814
- Publication date Oct 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Lu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING ADJOINED SOURCE CONTACT STRU...
- Publication number 20210225862
- Publication date Jul 22, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Lu Zhang
- H01 - BASIC ELECTRIC ELEMENTS