Kai-Hsuan LEE

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor gate contacts and methods of forming the same
- Patent number 12,119,259
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gaps in memory array structures
- Patent number 12,087,621
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure with silicide and method for forming the same
- Patent number 12,080,769
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing parasitic capacitance in semiconductor devices
- Patent number 12,009,263
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with air-gap spacers
- Patent number 12,002,863
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gaps in memory array structures
- Patent number 11,968,838
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET by implanting a dielectric with a...
- Patent number 11,901,455
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact air gap formation
- Patent number 11,901,408
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable patterning through layer expansion process and resulting s...
- Patent number 11,854,868
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 11,855,097
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k gate spacer and methods for forming the same
- Patent number 11,855,182
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible merge scheme for source/drain epitaxy regions
- Patent number 11,856,743
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact air gap formation and structures thereof
- Patent number 11,854,907
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio gate structure formation
- Patent number 11,824,101
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure and method fo...
- Patent number 11,777,004
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having airgap and method for manufactur...
- Patent number 11,776,855
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,735,471
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with airgap and method of forming the same
- Patent number 11,735,641
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method
- Patent number 11,682,675
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure for semiconductor device and methods of fabr...
- Patent number 11,610,841
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Air gaps in memory array structures
- Patent number 11,600,520
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having airgap and method for manufactur...
- Patent number 11,557,517
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a contact plug with an air gap spacer
- Patent number 11,456,383
- Issue date Sep 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 11,456,295
- Issue date Sep 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio gate structure formation
- Patent number 11,289,583
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate hard mask and method forming same
- Patent number 11,205,724
- Issue date Dec 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with airgap and method of forming the same
- Patent number 11,189,706
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device having source/drain contact(s) separate...
- Patent number 11,152,486
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming transistor by selectively growing gate spacer
- Patent number 11,133,229
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having air gap and method for manufactu...
- Patent number 11,081,395
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240387626
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE PATTERNING THROUGH LAYER EXPANSION PROCESS AND RESULTING S...
- Publication number 20240387246
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD
- Publication number 20240379680
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE WITH SILICIDE AND METHOD FOR FORMING THE SAME
- Publication number 20240371955
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE CONTACTS
- Publication number 20240371689
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF REDUCING PARASITIC CAPACITANCE IN SEMICONDUTOR DEVICES
- Publication number 20240332084
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS
- Publication number 20240304689
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Gaps In Memory Array Structures
- Publication number 20240260276
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT AIR GAP FORMATION
- Publication number 20240186372
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...
- Publication number 20240145596
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF
- Publication number 20240112958
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-K Gate Spacer and Methods for Forming the Same
- Publication number 20240113202
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS
- Publication number 20240098959
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE
- Publication number 20240088155
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Aspect Ratio Gate Structure Formation
- Publication number 20230411494
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE PATTERNING THROUGH LAYER EXPANSION PROCESS AND RESULTING S...
- Publication number 20230369098
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR HAVING AIRGAP AND METHOD FOR MANUFACTUR...
- Publication number 20230369120
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20230369102
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ta YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE WITH AIRGAP AND METHOD OF FORMING THE SAME
- Publication number 20230369443
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method
- Publication number 20230275094
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230268411
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE WITH SILICIDE AND METHOD FOR FORMING THE SAME
- Publication number 20230261068
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAPS IN MEMORY ARRAY STRUCTURES
- Publication number 20230215761
- Publication date Jul 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR HAVING AIRGAP AND METHOD FOR MANUFACTUR...
- Publication number 20230123292
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Air-Gap Spacers
- Publication number 20230068664
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAPS IN MEMORY ARRAY STRUCTURES
- Publication number 20230067455
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structures
- Publication number 20230048829
- Publication date Feb 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD
- Publication number 20230008128
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE
- Publication number 20220384442
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20220367623
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS

Kai-Hsuan LEE

Person

Patents Grantslast 30 patents

Transistor gate contacts and methods of forming the same

Air gaps in memory array structures

Contact structure with silicide and method for forming the same

Methods of reducing parasitic capacitance in semiconductor devices

Semiconductor device with air-gap spacers

Air gaps in memory array structures

Method of manufacturing a FinFET by implanting a dielectric with a...

Self-aligned contact air gap formation

Scalable patterning through layer expansion process and resulting s...

Air gap formation between gate spacer and epitaxy structure

Low-k gate spacer and methods for forming the same

Flexible merge scheme for source/drain epitaxy regions

Contact air gap formation and structures thereof

High aspect ratio gate structure formation

Fin field effect transistor (FinFET) device structure and method fo...

Fin field effect transistor having airgap and method for manufactur...

Semiconductor structure and method for forming the same

FinFET structure with airgap and method of forming the same

Fin field-effect transistor device and method

Interconnect structure for semiconductor device and methods of fabr...

Air gaps in memory array structures

Fin field effect transistor having airgap and method for manufactur...

Semiconductor device having a contact plug with an air gap spacer

Air gap formation between gate spacer and epitaxy structure

High aspect ratio gate structure formation

Self-aligned gate hard mask and method forming same

FinFET structure with airgap and method of forming the same

FinFET semiconductor device having source/drain contact(s) separate...

Forming transistor by selectively growing gate spacer

Fin field effect transistor having air gap and method for manufactu...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SCALABLE PATTERNING THROUGH LAYER EXPANSION PROCESS AND RESULTING S...

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD

CONTACT STRUCTURE WITH SILICIDE AND METHOD FOR FORMING THE SAME

TRANSISTOR GATE CONTACTS

METHODS OF REDUCING PARASITIC CAPACITANCE IN SEMICONDUTOR DEVICES

SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS

Air Gaps In Memory Array Structures

SELF-ALIGNED CONTACT AIR GAP FORMATION

METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...

CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF

Low-K Gate Spacer and Methods for Forming the Same

FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS

AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE

High Aspect Ratio Gate Structure Formation

SCALABLE PATTERNING THROUGH LAYER EXPANSION PROCESS AND RESULTING S...

FIN FIELD EFFECT TRANSISTOR HAVING AIRGAP AND METHOD FOR MANUFACTUR...

SEMICONDUCTOR STRUCTURE

FINFET STRUCTURE WITH AIRGAP AND METHOD OF FORMING THE SAME

Fin Field-Effect Transistor Device and Method

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

CONTACT STRUCTURE WITH SILICIDE AND METHOD FOR FORMING THE SAME

AIR GAPS IN MEMORY ARRAY STRUCTURES

FIN FIELD EFFECT TRANSISTOR HAVING AIRGAP AND METHOD FOR MANUFACTUR...

Semiconductor Device With Air-Gap Spacers

AIR GAPS IN MEMORY ARRAY STRUCTURES

Isolation Structures

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD

AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME