Kai TZENG

Person

Ping-Pong Nei-Pui, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Source/drain features
- Patent number 12,034,048
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide structures in transistors and methods of forming
- Patent number 11,855,169
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features
- Patent number 11,749,719
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features
- Patent number 11,398,553
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide structures in transistors and methods of forming
- Patent number 11,349,005
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed inductor structure to reduce step height
- Patent number 11,139,239
- Issue date Oct 5, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using a surfactant-containing shrinkage material to preve...
- Patent number 11,086,221
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using a surfactant-containing shrinkage material to preve...
- Patent number 10,734,436
- Issue date Aug 4, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high-aspect ratio pattern formation with submicron pixel...
- Patent number 10,546,889
- Issue date Jan 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning for substrate fabrication
- Patent number 10,186,542
- Issue date Jan 22, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high-aspect ratio pattern formation with submicron pixel...
- Patent number 10,121,811
- Issue date Nov 6, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using a surfactant-containing shrinkage material to preve...
- Patent number 10,090,357
- Issue date Oct 2, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing self-aligned isolation regions between sensor e...
- Patent number 9,401,384
- Issue date Jul 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned implants to reduce cross-talk of imaging sensors
- Patent number 9,171,876
- Issue date Oct 27, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned implants to reduce cross-talk of imaging sensors
- Patent number 8,766,406
- Issue date Jul 1, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned implants to reduce cross-talk of imaging sensors
- Patent number 8,367,512
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to prevent passivation layer peeling in a solder bump format...
- Patent number 6,951,803
- Issue date Oct 4, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai Tzeng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
- Publication number 20240379805
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INDUCTIVE COMPONENT AND METHOD OF FORMING
- Publication number 20240234481
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Shu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
- Publication number 20240096999
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN FEATURES
- Publication number 20230369405
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INDUCTIVE COMPONENT AND METHOD OF FORMING
- Publication number 20230290809
- Publication date Sep 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mei-Chi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRUCTURES
- Publication number 20230061857
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN FEATURES
- Publication number 20220344472
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide Structures in Transistors and Methods of Forming
- Publication number 20220293761
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN FEATURES
- Publication number 20220165848
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
- Publication number 20210367054
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED INDUCTOR STRUCTURE TO REDUCE STEP HEIGHT
- Publication number 20210098371
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Hung-Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Using A Surfactant-Containing Shrinkage Material to Preve...
- Publication number 20200365645
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF HIGH-ASPECT RATIO PATTERN FORMATION WITH SUBMICRON PIXEL...
- Publication number 20190088694
- Publication date Mar 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chao CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Patterning for Substrate Fabrication
- Publication number 20190027519
- Publication date Jan 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF USING A SURFACTANT-CONTAINING SHRINKAGE MATERIAL TO PREVE...
- Publication number 20190027530
- Publication date Jan 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF USING A SURFACTANT-CONTAINING SHRINKAGE MATERIAL TO PREVE...
- Publication number 20170186808
- Publication date Jun 29, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei-Chao Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREPARING SELF-ALIGNED ISOLATION REGIONS BETWEEN SENSOR E...
- Publication number 20160027839
- Publication date Jan 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi FU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED IMPLANTS TO REDUCE CROSS-TALK OF IMAGING SENSORS
- Publication number 20140264502
- Publication date Sep 18, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi FU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED IMPLANTS TO REDUCE CROSS-TALK OF IMAGING SENSORS
- Publication number 20130140666
- Publication date Jun 6, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi FU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED IMPLANTS TO REDUCE CROSS-TALK OF IMAGING SENSORS
- Publication number 20120052652
- Publication date Mar 1, 2012
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Shih-Chi FU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO PREVENT PASSIVATION LAYER PEELING IN A SOLDER BUMP FORMAT...
- Publication number 20050191836
- Publication date Sep 1, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai Tzeng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Source/drain features

Silicide structures in transistors and methods of forming

Source/drain features

Source/drain features

Silicide structures in transistors and methods of forming

Recessed inductor structure to reduce step height

Method of using a surfactant-containing shrinkage material to preve...

Method of using a surfactant-containing shrinkage material to preve...

Method of high-aspect ratio pattern formation with submicron pixel...

Patterning for substrate fabrication

Method of high-aspect ratio pattern formation with submicron pixel...

Method of using a surfactant-containing shrinkage material to preve...

Method of preparing self-aligned isolation regions between sensor e...

Self-aligned implants to reduce cross-talk of imaging sensors

Self-aligned implants to reduce cross-talk of imaging sensors

Self-aligned implants to reduce cross-talk of imaging sensors

Method to prevent passivation layer peeling in a solder bump format...

Patents Applicationslast 30 patents

SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING

SEMICONDUCTOR DEVICE WITH INDUCTIVE COMPONENT AND METHOD OF FORMING

SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING

SOURCE/DRAIN FEATURES

SEMICONDUCTOR DEVICE WITH INDUCTIVE COMPONENT AND METHOD OF FORMING

SOURCE/DRAIN STRUCTURES

SOURCE/DRAIN FEATURES

Silicide Structures in Transistors and Methods of Forming

SOURCE/DRAIN FEATURES

SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING

RECESSED INDUCTOR STRUCTURE TO REDUCE STEP HEIGHT

Method of Using A Surfactant-Containing Shrinkage Material to Preve...

METHOD OF HIGH-ASPECT RATIO PATTERN FORMATION WITH SUBMICRON PIXEL...

Patterning for Substrate Fabrication

METHOD OF USING A SURFACTANT-CONTAINING SHRINKAGE MATERIAL TO PREVE...

METHOD OF USING A SURFACTANT-CONTAINING SHRINKAGE MATERIAL TO PREVE...

METHOD OF PREPARING SELF-ALIGNED ISOLATION REGIONS BETWEEN SENSOR E...

SELF-ALIGNED IMPLANTS TO REDUCE CROSS-TALK OF IMAGING SENSORS

SELF-ALIGNED IMPLANTS TO REDUCE CROSS-TALK OF IMAGING SENSORS

SELF-ALIGNED IMPLANTS TO REDUCE CROSS-TALK OF IMAGING SENSORS

METHOD TO PREVENT PASSIVATION LAYER PEELING IN A SOLDER BUMP FORMAT...