Kai ZHAO

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Backside power rails and power distribution network for density sca...
- Patent number 12,268,031
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise bottom junction formation for vertical transport field effe...
- Patent number 12,068,415
- Issue date Aug 20, 2024
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VFET contact formation
- Patent number 11,908,907
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide for nanosheet transistor devices
- Patent number 11,888,048
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise bottom junction formation for vertical transport field effe...
- Patent number 11,515,427
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide for nanosheet transistor devices
- Patent number 11,211,474
- Issue date Dec 28, 2021
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact depth control
- Patent number 10,991,796
- Issue date Apr 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Lin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additional spacer for self-aligned contact for only high voltage Fi...
- Patent number 10,991,689
- Issue date Apr 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Abu Naser M. Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with thinned dielectric material
- Patent number 10,361,132
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to suppress work function effect by patterning...
- Patent number 10,354,999
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to suppress work function effect by patterning...
- Patent number 9,818,746
- Issue date Nov 14, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of O-ingress into gate stack dielectric layer using oxygen...
- Patent number 9,620,384
- Issue date Apr 11, 2017
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structure with selected stack removed for reduced gate res...
- Patent number 9,461,149
- Issue date Oct 4, 2016
- GLOBALFOUNDRIES Inc.
- Hongmei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Determining appropriateness of sampling integrated circuit test dat...
- Patent number 9,287,185
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Griselda Bonilla
- G01 - MEASURING TESTING
Information Patent Grant
Silicon nitride layer deposited at low temperature to prevent gate...
- Patent number 9,269,786
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing performance degradation in backup semiconductor chips
- Patent number 9,110,777
- Issue date Aug 18, 2015
- International Business Machines Corporation
- Aditya Bansal
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Single photon IR detectors and their integration with silicon detec...
- Patent number 8,637,875
- Issue date Jan 28, 2014
- The Regents of the University of California
- Hod Finkelstein
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Ultrathin spacer formation for carbon-based FET
- Patent number 8,274,072
- Issue date Sep 25, 2012
- International Business Machines Corporation
- Zhihong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrathin spacer formation for carbon-based FET
- Patent number 8,193,032
- Issue date Jun 5, 2012
- International Business Machines Corporation
- Zhihong Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE CUTS TO REMOVE PREDICTED INTERCONNECT BULGING REGIONS
- Publication number 20240419882
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Xiaoming Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION
- Publication number 20240113200
- Publication date Apr 4, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED CONTACT WITH A NEGATIVE TAPERED PROFILE
- Publication number 20230386897
- Publication date Nov 30, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR A LOGIC DEVICE AND ANOTHER DEVICE
- Publication number 20230378258
- Publication date Nov 23, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER RAILS AND POWER DISTRIBUTION NETWORK FOR DENSITY SCA...
- Publication number 20230207553
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...
- Publication number 20230029561
- Publication date Feb 2, 2023
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VFET CONTACT FORMATION
- Publication number 20220190125
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20220069104
- Publication date Mar 3, 2022
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...
- Publication number 20210391473
- Publication date Dec 16, 2021
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20210217873
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADDITIONAL SPACER FOR SELF-ALIGNED CONTACT FOR ONLY HIGH VOLTAGE FI...
- Publication number 20200321332
- Publication date Oct 8, 2020
- GLOBALFOUNDRIES Inc.
- Abu Naser M. Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT DEPTH CONTROL
- Publication number 20200203480
- Publication date Jun 25, 2020
- GLOBALFOUNDRIES INC.
- Lin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...
- Publication number 20190259754
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...
- Publication number 20180026035
- Publication date Jan 25, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH THINNED DIELECTRIC MATERIAL
- Publication number 20170207134
- Publication date Jul 20, 2017
- GLOBALFOUNDRIES INC.
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...
- Publication number 20170200719
- Publication date Jul 13, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH THINNED DIELECTRIC MATERIAL
- Publication number 20170110376
- Publication date Apr 20, 2017
- GLOBALFOUNDRIES INC.
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURE WITH SELECTED STACK REMOVED FOR REDUCED GATE RES...
- Publication number 20160079394
- Publication date Mar 17, 2016
- International Business Machines Corporation
- Hongmei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF O-INGRESS INTO GATE STACK DIELECTRIC LAYER USING OXYGEN...
- Publication number 20160005620
- Publication date Jan 7, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Nitride Layer Deposited at Low Temperature to Prevent Gate...
- Publication number 20150084132
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING PERFORMANCE DEGRADATION IN BACKUP SEMICONDUCTOR CHIPS
- Publication number 20130212414
- Publication date Aug 15, 2013
- International Business Machines Corporation
- Aditya Bansal
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Single Photon IR Detectors and Their Integration With Silicon Detec...
- Publication number 20130082286
- Publication date Apr 4, 2013
- Hod Finkelstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRATHIN SPACER FORMATION FOR CARBON-BASED FET
- Publication number 20120146001
- Publication date Jun 14, 2012
- International Business Machines Corporation
- Zhihong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultrathin Spacer Formation for Carbon-Based FET
- Publication number 20110315961
- Publication date Dec 29, 2011
- International Business Machines Corporation
- Zhihong Chen
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Backside power rails and power distribution network for density sca...

Precise bottom junction formation for vertical transport field effe...

VFET contact formation

Gate oxide for nanosheet transistor devices

Precise bottom junction formation for vertical transport field effe...

Gate oxide for nanosheet transistor devices

Source/drain contact depth control

Additional spacer for self-aligned contact for only high voltage Fi...

Structures with thinned dielectric material

Structure and method to suppress work function effect by patterning...

Structure and method to suppress work function effect by patterning...

Control of O-ingress into gate stack dielectric layer using oxygen...

Nanowire structure with selected stack removed for reduced gate res...

Determining appropriateness of sampling integrated circuit test dat...

Silicon nitride layer deposited at low temperature to prevent gate...

Reducing performance degradation in backup semiconductor chips

Single photon IR detectors and their integration with silicon detec...

Ultrathin spacer formation for carbon-based FET

Ultrathin spacer formation for carbon-based FET

Patents Applicationslast 30 patents

SELECTIVE CUTS TO REMOVE PREDICTED INTERCONNECT BULGING REGIONS

INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION

ANGLED CONTACT WITH A NEGATIVE TAPERED PROFILE

METHOD AND STRUCTURE FOR A LOGIC DEVICE AND ANOTHER DEVICE

BACKSIDE POWER RAILS AND POWER DISTRIBUTION NETWORK FOR DENSITY SCA...

PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...

VFET CONTACT FORMATION

GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES

PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...

GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES

ADDITIONAL SPACER FOR SELF-ALIGNED CONTACT FOR ONLY HIGH VOLTAGE FI...

SOURCE/DRAIN CONTACT DEPTH CONTROL

STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...

STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...

STRUCTURES WITH THINNED DIELECTRIC MATERIAL

STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...

STRUCTURES WITH THINNED DIELECTRIC MATERIAL

NANOWIRE STRUCTURE WITH SELECTED STACK REMOVED FOR REDUCED GATE RES...

CONTROL OF O-INGRESS INTO GATE STACK DIELECTRIC LAYER USING OXYGEN...

Silicon Nitride Layer Deposited at Low Temperature to Prevent Gate...

REDUCING PERFORMANCE DEGRADATION IN BACKUP SEMICONDUCTOR CHIPS

Single Photon IR Detectors and Their Integration With Silicon Detec...

ULTRATHIN SPACER FORMATION FOR CARBON-BASED FET

Ultrathin Spacer Formation for Carbon-Based FET