Kaiping Liu

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma treatment for thin film resistors on integrated circuits
- Patent number 10,276,648
- Issue date Apr 30, 2019
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost demos transistor with improved CHC immunity
- Patent number 9,577,094
- Issue date Feb 21, 2017
- Texas Instruments Incorporated
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High precision capacitor dielectric
- Patent number 9,496,327
- Issue date Nov 15, 2016
- Texas Instruments Incorporated
- John Paul Campbell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple depth vias in an integrated circuit
- Patent number 9,455,312
- Issue date Sep 27, 2016
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High precision capacitor dielectric
- Patent number 9,281,213
- Issue date Mar 8, 2016
- Texas Instruments Incorporated
- John Paul Campbell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple depth vias in an integrated circuit
- Patent number 9,230,887
- Issue date Jan 5, 2016
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost demos transistor with improved CHC immunity
- Patent number 9,202,912
- Issue date Dec 1, 2015
- Texas Instruments Incorporated
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple depth vias in an integrated circuit
- Patent number 8,980,723
- Issue date Mar 17, 2015
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog floating-gate capacitor with improved data retention in a si...
- Patent number 8,975,135
- Issue date Mar 10, 2015
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog floating-gate capacitor with improved data retention in a si...
- Patent number 8,779,550
- Issue date Jul 15, 2014
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage capacitor for analog floating-gate integrated circuits
- Patent number 8,729,616
- Issue date May 20, 2014
- Texas Instruments Incorporated
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Grant
Low leakage capacitor for analog floating-gate integrated circuits
- Patent number 8,558,296
- Issue date Oct 15, 2013
- Texas Instruments Incorporated
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a dislocation loop located within a bou...
- Patent number 7,691,714
- Issue date Apr 6, 2010
- Texas Instruments Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using oxynitride spacer to reduce parasitic capacitance in CMOS dev...
- Patent number 7,667,275
- Issue date Feb 23, 2010
- Texas Instruments Incorporated
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, integrated circuits, systems, and processes of manufac...
- Patent number 7,611,943
- Issue date Nov 3, 2009
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an implanted precipitate region and a m...
- Patent number 7,361,570
- Issue date Apr 22, 2008
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing the migration of grain boundaries
- Patent number 7,129,582
- Issue date Oct 31, 2006
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing transistor having germanium implant region...
- Patent number 7,118,979
- Issue date Oct 10, 2006
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for extraction of C-V characteristics of ultra-th...
- Patent number 7,088,123
- Issue date Aug 8, 2006
- Texas Instruments Incorporated
- Jau-Yuann Yang
- G01 - MEASURING TESTING
Information Patent Grant
Method to produce localized halo for MOS transistor
- Patent number 7,064,039
- Issue date Jun 20, 2006
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a localized halo implant therein and me...
- Patent number 7,038,258
- Issue date May 2, 2006
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide method for CMOS integrated circuits
- Patent number 7,029,967
- Issue date Apr 18, 2006
- Texas Instruments Incorporated
- Song Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing the migration of grain boundaries
- Patent number 6,955,980
- Issue date Oct 18, 2005
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an angled compensation implant and meth...
- Patent number 6,940,137
- Issue date Sep 6, 2005
- Texas Instruments Incorporated
- Jihong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method of source drain spacer engineering to improve transi...
- Patent number 6,913,980
- Issue date Jul 5, 2005
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a localized h...
- Patent number 6,794,235
- Issue date Sep 21, 2004
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce localized halo for MOS transistor
- Patent number 6,743,684
- Issue date Jun 1, 2004
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for addressing junction capacitances in semicondu...
- Patent number 6,727,131
- Issue date Apr 27, 2004
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for reducing segregation and diffusion of halo implants into...
- Patent number 6,713,360
- Issue date Mar 30, 2004
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with bottomwall/sidewall junction capacitance reduction...
- Patent number 6,677,208
- Issue date Jan 13, 2004
- Texas Instruments Incorporated
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THIN FILM RESISTOR INTEGRATION IN COPPER DAMASCENE METALLIZATION
- Publication number 20160218062
- Publication date Jul 28, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Rajni J. Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PRECISION CAPACITOR DIELECTRIC
- Publication number 20160163782
- Publication date Jun 9, 2016
- TEXAS INSTRUMENTS INCORPORATED
- John Paul CAMPBELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Depth Vias In an Integrated Circuit
- Publication number 20160079343
- Publication date Mar 17, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST DEMOS TRANSISTOR WITH IMPROVED CHC IMMUNITY
- Publication number 20160035890
- Publication date Feb 4, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Shaoping TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST DEMOS TRANSISTOR WITH IMPROVED CHC IMMUNITY
- Publication number 20150187938
- Publication date Jul 2, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Shaoping TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PRECISION CAPACITOR DIELECTRIC
- Publication number 20150187598
- Publication date Jul 2, 2015
- TEXAS INSTRUMENTS INCORPORATED
- John Paul CAMPBELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE DEPTH VIAS IN AN INTEGRATED CIRCUIT
- Publication number 20150170999
- Publication date Jun 18, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG FLOATING-GATE CAPACITOR WITH IMPROVED DATA RETENTION IN A SI...
- Publication number 20140295631
- Publication date Oct 2, 2014
- Kaiping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Analog Floating-Gate Capacitor with Improved Data Retention in a Si...
- Publication number 20140001526
- Publication date Jan 2, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Depth Vias In An Integrated Circuit
- Publication number 20130334659
- Publication date Dec 19, 2013
- Kaiping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE CAPACITOR FOR ANALOG FLOATING-GATE INTEGRATED CIRCUITS
- Publication number 20130130450
- Publication date May 23, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Application
Low Leakage Capacitor for Analog Floating-Gate Integrated Circuits
- Publication number 20120241829
- Publication date Sep 27, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSITOR HAVING A GERMANIUM IMPLANT REGION LOCATED THEREIN AND A M...
- Publication number 20100022062
- Publication date Jan 28, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having an Implanted Precipitate Region and a M...
- Publication number 20080210976
- Publication date Sep 4, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A GERMANIUM IMPLANT REGION LOCATED THEREIN AND A...
- Publication number 20070004158
- Publication date Jan 4, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using Oxynitride Spacer to Reduce Parasitic Capacitance in CMOS Dev...
- Publication number 20060216882
- Publication date Sep 28, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a dislocation loop located within a bou...
- Publication number 20060163651
- Publication date Jul 27, 2006
- Texas Instruments, Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors, integrated circuits, systems, and processes of manufac...
- Publication number 20060084247
- Publication date Apr 20, 2006
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using oxynitride spacer to reduce parasitic capacitance in CMOS dev...
- Publication number 20060054934
- Publication date Mar 16, 2006
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide method for CMOS integrated circuits
- Publication number 20060019478
- Publication date Jan 26, 2006
- Song Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing the migration of grain boundaries
- Publication number 20050263897
- Publication date Dec 1, 2005
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel process method of source drain spacer engineering to improve...
- Publication number 20050212041
- Publication date Sep 29, 2005
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having a germanium implant region located therein and a...
- Publication number 20050093032
- Publication date May 5, 2005
- Texas Instruments, Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an angled compensation implant and meth...
- Publication number 20050062103
- Publication date Mar 24, 2005
- Texas Instruments, Incorporated
- Jihong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a localized halo implant therein and me...
- Publication number 20050012149
- Publication date Jan 20, 2005
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel process method of source drain spacer engineering to improve...
- Publication number 20040266121
- Publication date Dec 30, 2004
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to produce localized halo for MOS transistor
- Publication number 20040166611
- Publication date Aug 26, 2004
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with bottomwall/sidewall junction capacitance reduction...
- Publication number 20040079992
- Publication date Apr 29, 2004
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to produce localized halo for MOS transistor
- Publication number 20040072395
- Publication date Apr 15, 2004
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing the migration of grain boundaries
- Publication number 20040043543
- Publication date Mar 4, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS

Kaiping Liu

Person

Patents Grantslast 30 patents

Plasma treatment for thin film resistors on integrated circuits

Low cost demos transistor with improved CHC immunity

High precision capacitor dielectric

Multiple depth vias in an integrated circuit

High precision capacitor dielectric

Multiple depth vias in an integrated circuit

Low cost demos transistor with improved CHC immunity

Multiple depth vias in an integrated circuit

Analog floating-gate capacitor with improved data retention in a si...

Analog floating-gate capacitor with improved data retention in a si...

Low leakage capacitor for analog floating-gate integrated circuits

Low leakage capacitor for analog floating-gate integrated circuits

Semiconductor device having a dislocation loop located within a bou...

Using oxynitride spacer to reduce parasitic capacitance in CMOS dev...

Transistors, integrated circuits, systems, and processes of manufac...

Semiconductor device having an implanted precipitate region and a m...

Reducing the migration of grain boundaries

Method of manufacturing transistor having germanium implant region...

System and method for extraction of C-V characteristics of ultra-th...

Method to produce localized halo for MOS transistor

Semiconductor device having a localized halo implant therein and me...

Silicide method for CMOS integrated circuits

Reducing the migration of grain boundaries

Semiconductor device having an angled compensation implant and meth...

Process method of source drain spacer engineering to improve transi...

Method of manufacturing a semiconductor device having a localized h...

Method to produce localized halo for MOS transistor

System and method for addressing junction capacitances in semicondu...

System for reducing segregation and diffusion of halo implants into...

Transistor with bottomwall/sidewall junction capacitance reduction...

Patents Applicationslast 30 patents

THIN FILM RESISTOR INTEGRATION IN COPPER DAMASCENE METALLIZATION

HIGH PRECISION CAPACITOR DIELECTRIC

Multiple Depth Vias In an Integrated Circuit

LOW COST DEMOS TRANSISTOR WITH IMPROVED CHC IMMUNITY

LOW COST DEMOS TRANSISTOR WITH IMPROVED CHC IMMUNITY

HIGH PRECISION CAPACITOR DIELECTRIC

MULTIPLE DEPTH VIAS IN AN INTEGRATED CIRCUIT

ANALOG FLOATING-GATE CAPACITOR WITH IMPROVED DATA RETENTION IN A SI...

Analog Floating-Gate Capacitor with Improved Data Retention in a Si...

Multiple Depth Vias In An Integrated Circuit

LOW LEAKAGE CAPACITOR FOR ANALOG FLOATING-GATE INTEGRATED CIRCUITS

Low Leakage Capacitor for Analog Floating-Gate Integrated Circuits

TRANSITOR HAVING A GERMANIUM IMPLANT REGION LOCATED THEREIN AND A M...

Semiconductor Device Having an Implanted Precipitate Region and a M...

TRANSISTOR HAVING A GERMANIUM IMPLANT REGION LOCATED THEREIN AND A...

Using Oxynitride Spacer to Reduce Parasitic Capacitance in CMOS Dev...

Semiconductor device having a dislocation loop located within a bou...

Transistors, integrated circuits, systems, and processes of manufac...

Using oxynitride spacer to reduce parasitic capacitance in CMOS dev...

Silicide method for CMOS integrated circuits

Reducing the migration of grain boundaries

Novel process method of source drain spacer engineering to improve...

Transistor having a germanium implant region located therein and a...

Semiconductor device having an angled compensation implant and meth...

Semiconductor device having a localized halo implant therein and me...

Novel process method of source drain spacer engineering to improve...

Method to produce localized halo for MOS transistor

Transistor with bottomwall/sidewall junction capacitance reduction...

Method to produce localized halo for MOS transistor

Reducing the migration of grain boundaries