Kanetake Takasaki

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacture system for semiconductor device with thin gate insulati...
- Patent number 6,984,267
- Issue date Jan 10, 2006
- Fujitsu Limited
- Kiyoshi Irino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,780,699
- Issue date Aug 24, 2004
- Fujitsu Limited
- Yasuyuki Tamura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacture method and system for semiconductor device with thin ga...
- Patent number 6,468,926
- Issue date Oct 22, 2002
- Fujitsu Limited
- Kiyoshi Irino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a compound semiconductor crystal-on-substrate stru...
- Patent number 5,424,243
- Issue date Jun 13, 1995
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the preparation of a high dielectric thin film using EC...
- Patent number 5,312,783
- Issue date May 17, 1994
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor substrate
- Patent number 5,210,052
- Issue date May 11, 1993
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 5,183,778
- Issue date Feb 2, 1993
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with first and second buffer layers
- Patent number 5,107,317
- Issue date Apr 21, 1992
- Fujitsu Ltd.
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a heteroepitaxial substrate
- Patent number 5,057,880
- Issue date Oct 15, 1991
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial growth method
- Patent number 5,019,529
- Issue date May 28, 1991
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device
- Patent number 4,929,985
- Issue date May 29, 1990
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the formation of phosphosilicate glass coating
- Patent number 4,781,945
- Issue date Nov 1, 1988
- Fujitsu Limited
- Masahide Nishimura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for preparation of semiconductor device
- Patent number 4,741,919
- Issue date May 3, 1988
- Fujitsu Limited
- Kanetake Takasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
UV erasable EPROM with UV transparent silicon oxynitride coating
- Patent number 4,581,622
- Issue date Apr 8, 1986
- Fujitsu Limited
- Kanetake Takasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vapor phase growth method
- Patent number 4,539,068
- Issue date Sep 3, 1985
- Fujitsu Limited
- Mikio Takagi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process of producing a semiconductor device
- Patent number 4,532,022
- Issue date Jul 30, 1985
- Fujitsu Limited
- Kanetake Takasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for manufacturing a semiconductor device having a non-porou...
- Patent number 4,406,053
- Issue date Sep 27, 1983
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of plasma enhanced chemical vapor deposition of phosphosilic...
- Patent number 4,394,401
- Issue date Jul 19, 1983
- Fujitsu Limited
- Yoshimi Shioya
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of reactive sputtering
- Patent number 4,384,933
- Issue date May 24, 1983
- Fujitsu Limited
- Kanetake Takasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process of producing semiconductor devices by forming a silicon oxy...
- Patent number 4,363,868
- Issue date Dec 14, 1982
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030168697
- Publication date Sep 11, 2003
- FUJITSU LIMITED
- Yasuyuki Tamura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Manufacture system for semiconductor device with thin gate insulati...
- Publication number 20030022523
- Publication date Jan 30, 2003
- FUJITSU LIMITED
- Kiyoshi Irino
- H01 - BASIC ELECTRIC ELEMENTS

Kanetake Takasaki

Person

Patents Grantslast 30 patents

Manufacture system for semiconductor device with thin gate insulati...

Semiconductor device and method for fabricating the same

Manufacture method and system for semiconductor device with thin ga...

Method of making a compound semiconductor crystal-on-substrate stru...

Process for the preparation of a high dielectric thin film using EC...

Method for fabricating a semiconductor substrate

Method of producing a semiconductor device

Semiconductor device with first and second buffer layers

Semiconductor device having a heteroepitaxial substrate

Heteroepitaxial growth method

Compound semiconductor device

Process for the formation of phosphosilicate glass coating

Process for preparation of semiconductor device

UV erasable EPROM with UV transparent silicon oxynitride coating

Vapor phase growth method

Process of producing a semiconductor device

Process for manufacturing a semiconductor device having a non-porou...

Method of plasma enhanced chemical vapor deposition of phosphosilic...

Method of reactive sputtering

Process of producing semiconductor devices by forming a silicon oxy...

Patents Applicationslast 30 patents

Semiconductor device and method for fabricating the same

Manufacture system for semiconductor device with thin gate insulati...