Kangho Lee

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 10,103,319
- Issue date Oct 16, 2018
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
OTP cell with reversed MTJ connection
- Patent number 9,966,149
- Issue date May 8, 2018
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Thermally tolerant perpendicular magnetic anisotropy coupled elemen...
- Patent number 9,935,258
- Issue date Apr 3, 2018
- QUALCOMM Incorporated
- Wei-Chuan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with tunneling magnetoresistance enhanced spacer layer
- Patent number 9,923,137
- Issue date Mar 20, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with tunneling magnetoresistance enhanced spacer layer
- Patent number 9,876,163
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- G11 - INFORMATION STORAGE
Information Patent Grant
Comparator including a magnetic tunnel junction (MTJ) device and a...
- Patent number 9,813,049
- Issue date Nov 7, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,728,718
- Issue date Aug 8, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
OTP cell with reversed MTJ connection
- Patent number 9,679,663
- Issue date Jun 13, 2017
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
High thermal budget magnetic memory
- Patent number 9,666,640
- Issue date May 30, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G11 - INFORMATION STORAGE
Information Patent Grant
STT-MRAM bitcell for embedded flash applications
- Patent number 9,653,137
- Issue date May 16, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random access memory with voltag...
- Patent number 9,646,670
- Issue date May 9, 2017
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 9,634,237
- Issue date Apr 25, 2017
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic etch stop layer for spin-transfer torque magnetoresistive...
- Patent number 9,620,706
- Issue date Apr 11, 2017
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid synthetic antiferromagnetic layer for perpendicular magnetic...
- Patent number 9,614,147
- Issue date Apr 4, 2017
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual interface free layer with amorphous cap layer for perpendicula...
- Patent number 9,601,687
- Issue date Mar 21, 2017
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating smooth seed layers with uniform crystalline t...
- Patent number 9,595,666
- Issue date Mar 14, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Antiferromagnetically coupled spin-torque oscillator with hard perp...
- Patent number 9,595,917
- Issue date Mar 14, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Spin-orbit-torque magnetoresistive random access memory with voltag...
- Patent number 9,589,619
- Issue date Mar 7, 2017
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference layer for perpendicular magnetic anisotropy magnetic tunn...
- Patent number 9,583,696
- Issue date Feb 28, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,570,509
- Issue date Feb 14, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous alloy space for perpendicular MTJs
- Patent number 9,548,445
- Issue date Jan 17, 2017
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Synthetic antiferromagnet (SAF) coupled free layer for perpendicula...
- Patent number 9,548,446
- Issue date Jan 17, 2017
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching film structure for magnetic random access memory (MRAM) cell
- Patent number 9,461,094
- Issue date Oct 4, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjusting resistive memory write driver strength based on write err...
- Patent number 9,455,014
- Issue date Sep 27, 2016
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnesium oxide capping with a shorted path for perpendicular magne...
- Patent number 9,444,035
- Issue date Sep 13, 2016
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smooth seed layers with uniform crystalline texture for high perpen...
- Patent number 9,385,309
- Issue date Jul 5, 2016
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid synthetic antiferromagnetic layer for perpendicular magnetic...
- Patent number 9,379,314
- Issue date Jun 28, 2016
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing source loading effect in spin torque transfer magnetoresis...
- Patent number 9,368,715
- Issue date Jun 14, 2016
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic automatic test equipment (ATE) memory tester device and me...
- Patent number 9,368,232
- Issue date Jun 14, 2016
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Physically unclonable function based on programming voltage of magn...
- Patent number 9,343,135
- Issue date May 17, 2016
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20170186942
- Publication date Jun 29, 2017
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OTP CELL WITH REVERSED MTJ CONNECTION
- Publication number 20170178741
- Publication date Jun 22, 2017
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Application
ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERP...
- Publication number 20170141729
- Publication date May 18, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20170104153
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPARATOR INCLUDING A MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND A...
- Publication number 20170047912
- Publication date Feb 16, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERP...
- Publication number 20170040945
- Publication date Feb 9, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
STT-MRAM Bitcell for Embedded Flash Applications
- Publication number 20160300604
- Publication date Oct 13, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kangho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...
- Publication number 20160284988
- Publication date Sep 29, 2016
- QUALCOMM Incorporated
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THERMAL BUDGET MAGNETIC MEMORY
- Publication number 20160276407
- Publication date Sep 22, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G11 - INFORMATION STORAGE
Information Patent Application
ADJUSTING RESISTIVE MEMORY WRITE DRIVER STRENGTH BASED ON WRITE ERR...
- Publication number 20160276009
- Publication date Sep 22, 2016
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID SYNTHETIC ANTIFERROMAGNETIC LAYER FOR PERPENDICULAR MAGNETIC...
- Publication number 20160276581
- Publication date Sep 22, 2016
- QUALCOMM Incorporated
- Chando PARK
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAG...
- Publication number 20160267961
- Publication date Sep 15, 2016
- QUALCOMM Incorporated
- Kangho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY WITH TUNNELING MAGNETORESISTANCE ENHANCED SPACER LAYER
- Publication number 20160260892
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY WITH TUNNELING MAGNETORESISTANCE ENHANCED SPACER LAYER
- Publication number 20160260891
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- G11 - INFORMATION STORAGE
Information Patent Application
SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...
- Publication number 20160233418
- Publication date Aug 11, 2016
- QUALCOMM Incorporated
- Chando PARK
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAG...
- Publication number 20160232959
- Publication date Aug 11, 2016
- QUALCOMM Incorporated
- Kangho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20160225817
- Publication date Aug 4, 2016
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20160181508
- Publication date Jun 23, 2016
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE...
- Publication number 20160155931
- Publication date Jun 2, 2016
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OTP CELL WITH REVERSED MTJ CONNECTION
- Publication number 20160125953
- Publication date May 5, 2016
- QUALCOMM Incorporated
- Jung Pill Kim
- G11 - INFORMATION STORAGE
Information Patent Application
THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPY COUPLED ELEMEN...
- Publication number 20160126453
- Publication date May 5, 2016
- QUALCOMM Incorporated
- Wei-Chuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MTJS
- Publication number 20160111634
- Publication date Apr 21, 2016
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNE...
- Publication number 20160072043
- Publication date Mar 10, 2016
- QUALCOMM Incorporated
- Chando PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-MASK MTJ INTEGRATION FOR STT MRAM
- Publication number 20160020383
- Publication date Jan 21, 2016
- QUALCOMM Incorporated
- Seung H. KANG
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL
- Publication number 20160020250
- Publication date Jan 21, 2016
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...
- Publication number 20160005955
- Publication date Jan 7, 2016
- QUALCOMM Incorporated
- Chando PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING SOURCE LOADING EFFECT IN SPIN TORQUE TRANSFER MAGNETORESIS...
- Publication number 20150349244
- Publication date Dec 3, 2015
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...
- Publication number 20150311427
- Publication date Oct 29, 2015
- QUALCOMM Incorporated
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION AND METHOD FOR FABRICATING A MAGNETIC TUNN...
- Publication number 20150311429
- Publication date Oct 29, 2015
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE ONE-TIME PROGRAMMABLE RESISTIVE RANDOM ACCESS MEMORIES
- Publication number 20150279479
- Publication date Oct 1, 2015
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

OTP cell with reversed MTJ connection

Thermally tolerant perpendicular magnetic anisotropy coupled elemen...

Magnetic memory with tunneling magnetoresistance enhanced spacer layer

Magnetic memory with tunneling magnetoresistance enhanced spacer layer

Comparator including a magnetic tunnel junction (MTJ) device and a...

Magnetic tunnel junction (MTJ) device array

OTP cell with reversed MTJ connection

High thermal budget magnetic memory

STT-MRAM bitcell for embedded flash applications

Spin-orbit-torque magnetoresistive random access memory with voltag...

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

Magnetic etch stop layer for spin-transfer torque magnetoresistive...

Hybrid synthetic antiferromagnetic layer for perpendicular magnetic...

Dual interface free layer with amorphous cap layer for perpendicula...

Method of fabricating smooth seed layers with uniform crystalline t...

Antiferromagnetically coupled spin-torque oscillator with hard perp...

Spin-orbit-torque magnetoresistive random access memory with voltag...

Reference layer for perpendicular magnetic anisotropy magnetic tunn...

Magnetic tunnel junction (MTJ) device array

Amorphous alloy space for perpendicular MTJs

Synthetic antiferromagnet (SAF) coupled free layer for perpendicula...

Switching film structure for magnetic random access memory (MRAM) cell

Adjusting resistive memory write driver strength based on write err...

Magnesium oxide capping with a shorted path for perpendicular magne...

Smooth seed layers with uniform crystalline texture for high perpen...

Hybrid synthetic antiferromagnetic layer for perpendicular magnetic...

Reducing source loading effect in spin torque transfer magnetoresis...

Magnetic automatic test equipment (ATE) memory tester device and me...

Physically unclonable function based on programming voltage of magn...

Patents Applicationslast 30 patents

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

OTP CELL WITH REVERSED MTJ CONNECTION

ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERP...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

COMPARATOR INCLUDING A MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND A...

ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERP...

STT-MRAM Bitcell for Embedded Flash Applications

SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...

HIGH THERMAL BUDGET MAGNETIC MEMORY

ADJUSTING RESISTIVE MEMORY WRITE DRIVER STRENGTH BASED ON WRITE ERR...

HYBRID SYNTHETIC ANTIFERROMAGNETIC LAYER FOR PERPENDICULAR MAGNETIC...

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAG...

MAGNETIC MEMORY WITH TUNNELING MAGNETORESISTANCE ENHANCED SPACER LAYER

MAGNETIC MEMORY WITH TUNNELING MAGNETORESISTANCE ENHANCED SPACER LAYER

SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAG...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE...

OTP CELL WITH REVERSED MTJ CONNECTION

THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPY COUPLED ELEMEN...

AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MTJS

MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNE...

ONE-MASK MTJ INTEGRATION FOR STT MRAM

SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL

SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...

REDUCING SOURCE LOADING EFFECT IN SPIN TORQUE TRANSFER MAGNETORESIS...

SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...

MAGNETIC TUNNEL JUNCTION AND METHOD FOR FABRICATING A MAGNETIC TUNN...

ANTI-FUSE ONE-TIME PROGRAMMABLE RESISTIVE RANDOM ACCESS MEMORIES