Kap-Ryeol KU

Person

Suwon-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide wafer and semiconductor device applied the same
- Patent number 12,136,653
- Issue date Nov 5, 2024
- SENIC INC.
- Jung Woo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide wafer and method of manufacturing same
- Patent number 12,037,704
- Issue date Jul 16, 2024
- Senic Inc.
- Myung Ok Kyun
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of silicon carbide wafer, silicon carbide wafe...
- Patent number 11,969,917
- Issue date Apr 30, 2024
- SENIC INC.
- Jung-Gyu Kim
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Wafer manufacturing method, epitaxial wafer manufacturing method, a...
- Patent number 11,939,698
- Issue date Mar 26, 2024
- SENIC INC.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer and method of manufacturing wafer
- Patent number 11,862,685
- Issue date Jan 2, 2024
- SENIC INC.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for growing a SiC single crystal ingot comprising a filte...
- Patent number 11,859,305
- Issue date Jan 2, 2024
- Senic Inc.
- Jung Woo Choi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of measuring a graphite article, apparatus for a measurement...
- Patent number 11,856,678
- Issue date Dec 26, 2023
- SENIC INC.
- Eun Su Yang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of growing semi-insulating silicon carbide single crystal us...
- Patent number 11,846,038
- Issue date Dec 19, 2023
- Senic Inc.
- Jung Woo Choi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a silicon carbide ingot comprising moving a...
- Patent number 11,795,572
- Issue date Oct 24, 2023
- SENIC INC.
- Byung Kyu Jang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing SiC ingot, method for preparing SiC wafer and...
- Patent number 11,708,644
- Issue date Jul 25, 2023
- SENIC INC.
- Jong Hwi Park
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of cleaning wafer and wafer with reduced impurities
- Patent number 11,646,209
- Issue date May 9, 2023
- SENIC INC.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for producing silicon carbide ingot
- Patent number 11,591,711
- Issue date Feb 28, 2023
- SENIC INC.
- Jong Hwi Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide ingot, wafer, method for producing a silicon carbid...
- Patent number 11,566,344
- Issue date Jan 31, 2023
- SENIC INC.
- Jong Hwi Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing silicon carbide wafer and silicon carbide wafer
- Patent number 11,474,012
- Issue date Oct 18, 2022
- SENIC INC.
- Jong Hwi Park
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Silicon carbide ingot, method of preparing the same, and method for...
- Patent number 11,466,383
- Issue date Oct 11, 2022
- SENIC INC.
- Jong Hwi Park
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Adhesive layer of seed crystal, method for preparing a laminate usi...
- Patent number 11,447,889
- Issue date Sep 20, 2022
- SENIC INC.
- Jong Hwi Park
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Method for preparing a SiC ingot and device for preparing a SiC ing...
- Patent number 11,359,306
- Issue date Jun 14, 2022
- SENIC INC.
- Jong Hwi Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide ingot manufacturing method and silicon carbide ingo...
- Patent number 11,339,497
- Issue date May 24, 2022
- SENIC INC.
- Jong Hwi Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystal silicon carbide ingot having larg...
- Patent number 11,339,498
- Issue date May 24, 2022
- Senic Inc.
- Jung Woo Choi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wafer and method of manufactruring wafer
- Patent number 11,289,576
- Issue date Mar 29, 2022
- SENIC INC.
- Jong Hwi Park
- G01 - MEASURING TESTING
Information Patent Grant
Seed crystal including protective film including a first layer with...
- Patent number 11,268,209
- Issue date Mar 8, 2022
- SENIC INC.
- Sang Ki Ko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing ingot, raw material for ingot growth, and meth...
- Patent number 11,225,730
- Issue date Jan 18, 2022
- SENIC INC.
- Byung Kyu Jang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing an ingot comprising a crucible body with a...
- Patent number 11,078,599
- Issue date Aug 3, 2021
- SKC Co., Ltd
- Byung Kyu Jang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composition for preparing silicon carbide ingot and method for prep...
- Patent number 10,822,720
- Issue date Nov 3, 2020
- SKC Co., Ltd
- Jong Hwi Park
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...
- Publication number 20240076799
- Publication date Mar 7, 2024
- SENIC Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide powder, method for manufacturing silicon carbide in...
- Publication number 20230203707
- Publication date Jun 29, 2023
- Senic Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE POWDER AND METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20230203710
- Publication date Jun 29, 2023
- Senic Inc.
- Jong Hwi Park
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL IN...
- Publication number 20230193506
- Publication date Jun 22, 2023
- Senic Inc.
- Jung Woo CHOI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING SAME
- Publication number 20230140873
- Publication date May 11, 2023
- Senic Inc.
- Myung Ok KYUN
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE
- Publication number 20220403551
- Publication date Dec 22, 2022
- SENIC Inc.
- Jung Woo CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR...
- Publication number 20220341055
- Publication date Oct 27, 2022
- SENIC Inc.
- Jong Hwi PARK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE APPLIED THE SAME
- Publication number 20220320296
- Publication date Oct 6, 2022
- SENIC Inc.
- Jung Woo CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGO...
- Publication number 20220220632
- Publication date Jul 14, 2022
- SENIC Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE WAFER, SILICON CARBIDE WAFE...
- Publication number 20220219354
- Publication date Jul 14, 2022
- SENIC Inc.
- Jung-Gyu KIM
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
WAFER AND METHOD OF MANUFACTURING WAFER
- Publication number 20220157944
- Publication date May 19, 2022
- SENIC Inc.
- Jong Hwi PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CLEANING WAFER AND WAFER WITH REDUCED IMPURITIES
- Publication number 20220093419
- Publication date Mar 24, 2022
- SENIC INC.
- Jong Hwi PARK
- B08 - CLEANING
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF PREPARING THE SAME
- Publication number 20220090295
- Publication date Mar 24, 2022
- SENIC INC.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGO...
- Publication number 20220064817
- Publication date Mar 3, 2022
- SENIC INC.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
WAFER AND METHOD OF MANUFACTRURING WAFER
- Publication number 20220020852
- Publication date Jan 20, 2022
- SENIC INC.
- Jong Hwi PARK
- G01 - MEASURING TESTING
Information Patent Application
SILICON CARBIDE INGOT, WAFER, METHOD FOR PRODUCING A SILICON CARBID...
- Publication number 20210388527
- Publication date Dec 16, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE INGOT AND SYSTEM FOR MANUFA...
- Publication number 20210372003
- Publication date Dec 2, 2021
- SKC CO., LTD.
- Byung Kyu JANG
- C30 - CRYSTAL GROWTH
Information Patent Application
WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...
- Publication number 20210372005
- Publication date Dec 2, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PRODUCING SILICON CARBIDE INGOT
- Publication number 20210317593
- Publication date Oct 14, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL IN...
- Publication number 20210317595
- Publication date Oct 14, 2021
- SKC CO., LTD.
- Jung Woo CHOI
- C30 - CRYSTAL GROWTH
Information Patent Application
WAFER, EPITAXIAL WAFER, METHOD FOR MANUFACTURING A WAFER AND METHOD...
- Publication number 20210272793
- Publication date Sep 2, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING A SiC INGOT, METHOD FOR PREPARING A SiC WAFER,...
- Publication number 20210123157
- Publication date Apr 29, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MESURING A GRAPHITE ARTICLE, APPARATUS FOR A MEASURMENT,...
- Publication number 20210127462
- Publication date Apr 29, 2021
- SKC CO., LTD.
- Eun Su YANG
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR PREPARING SILICON CARBIDE WAFER AND SILICON CARBIDE WAFER
- Publication number 20210123843
- Publication date Apr 29, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING SiC INGOT, METHOD FOR PREPARING SiC WAFER AND...
- Publication number 20210123160
- Publication date Apr 29, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
ADHESIVE LAYER OF SEED CRYSTAL, METHOD FOR PREPARING A LAMINATE USI...
- Publication number 20210115587
- Publication date Apr 22, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR...
- Publication number 20210115592
- Publication date Apr 22, 2021
- SKC CO., LTD.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING INGOT, RAW MATERIAL FOR INGOT GROWTH, AND METH...
- Publication number 20200299859
- Publication date Sep 24, 2020
- SKC CO., LTD.
- Byung Kyu JANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SINGLE CRYSTAL SILICON CARBIDE INGOT HAVING LARG...
- Publication number 20200255973
- Publication date Aug 13, 2020
- SKC CO., LTD.
- Jung Woo CHOI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING INGOT AND METHOD FOR PRODUCING SILICON CARB...
- Publication number 20200190698
- Publication date Jun 18, 2020
- SKC CO., LTD.
- Byung Kyu JANG
- C30 - CRYSTAL GROWTH

Kap-Ryeol KU

Person

Patents Grantslast 30 patents

Silicon carbide wafer and semiconductor device applied the same

Silicon carbide wafer and method of manufacturing same

Manufacturing method of silicon carbide wafer, silicon carbide wafe...

Wafer manufacturing method, epitaxial wafer manufacturing method, a...

Wafer and method of manufacturing wafer

Apparatus for growing a SiC single crystal ingot comprising a filte...

Method of measuring a graphite article, apparatus for a measurement...

Method of growing semi-insulating silicon carbide single crystal us...

Method of manufacturing a silicon carbide ingot comprising moving a...

Method for preparing SiC ingot, method for preparing SiC wafer and...

Method of cleaning wafer and wafer with reduced impurities

Method and system for producing silicon carbide ingot

Silicon carbide ingot, wafer, method for producing a silicon carbid...

Method for preparing silicon carbide wafer and silicon carbide wafer

Silicon carbide ingot, method of preparing the same, and method for...

Adhesive layer of seed crystal, method for preparing a laminate usi...

Method for preparing a SiC ingot and device for preparing a SiC ing...

Silicon carbide ingot manufacturing method and silicon carbide ingo...

Method for growing single crystal silicon carbide ingot having larg...

Wafer and method of manufactruring wafer

Seed crystal including protective film including a first layer with...

Method for producing ingot, raw material for ingot growth, and meth...

Apparatus for producing an ingot comprising a crucible body with a...

Composition for preparing silicon carbide ingot and method for prep...

Patents Applicationslast 30 patents

WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...

Silicon carbide powder, method for manufacturing silicon carbide in...

SILICON CARBIDE POWDER AND METHOD FOR MANUFACTURING SILICON CARBIDE...

METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL IN...

SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING SAME

SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE

SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR...

SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE APPLIED THE SAME

SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGO...

MANUFACTURING METHOD OF SILICON CARBIDE WAFER, SILICON CARBIDE WAFE...

WAFER AND METHOD OF MANUFACTURING WAFER

METHOD OF CLEANING WAFER AND WAFER WITH REDUCED IMPURITIES

SILICON CARBIDE WAFER AND METHOD OF PREPARING THE SAME

SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGO...

WAFER AND METHOD OF MANUFACTRURING WAFER

SILICON CARBIDE INGOT, WAFER, METHOD FOR PRODUCING A SILICON CARBID...

METHOD OF MANUFACTURING SILICON CARBIDE INGOT AND SYSTEM FOR MANUFA...

WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...

METHOD AND SYSTEM FOR PRODUCING SILICON CARBIDE INGOT

METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL IN...

WAFER, EPITAXIAL WAFER, METHOD FOR MANUFACTURING A WAFER AND METHOD...

METHOD FOR PREPARING A SiC INGOT, METHOD FOR PREPARING A SiC WAFER,...

METHOD OF MESURING A GRAPHITE ARTICLE, APPARATUS FOR A MEASURMENT,...

METHOD FOR PREPARING SILICON CARBIDE WAFER AND SILICON CARBIDE WAFER

METHOD FOR PREPARING SiC INGOT, METHOD FOR PREPARING SiC WAFER AND...

ADHESIVE LAYER OF SEED CRYSTAL, METHOD FOR PREPARING A LAMINATE USI...

SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR...

METHOD FOR PRODUCING INGOT, RAW MATERIAL FOR INGOT GROWTH, AND METH...

METHOD FOR GROWING SINGLE CRYSTAL SILICON CARBIDE INGOT HAVING LARG...

APPARATUS FOR PRODUCING INGOT AND METHOD FOR PRODUCING SILICON CARB...