Kapil Kelkar

Person

Torrance, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Controlled resistance integrated snubber for power switching device
- Patent number 11,217,577
- Issue date Jan 4, 2022
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled resistance integrated snubber for power switching device
- Patent number 10,593,664
- Issue date Mar 17, 2020
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a power semiconductor device
- Patent number 10,483,359
- Issue date Nov 19, 2019
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Block commutation to reduce inverter losses for BLDC drives
- Patent number 10,374,533
- Issue date Aug 6, 2019
- Infineon Technologies Austria AG
- Venkata Anand Prabhala
- G01 - MEASURING TESTING
Information Patent Grant
Method of forming a semiconductor structure having integrated snubb...
- Patent number 9,966,464
- Issue date May 8, 2018
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with contiguous gate trenches and offset...
- Patent number 9,818,743
- Issue date Nov 14, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field plate double trench having a thic...
- Patent number 9,735,241
- Issue date Aug 15, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shallow and narrow trench FET and related...
- Patent number 9,653,597
- Issue date May 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having integrated snubber resistance
- Patent number 9,627,328
- Issue date Apr 18, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with source trench and termination trenc...
- Patent number 9,620,583
- Issue date Apr 11, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field plate trench having a thick botto...
- Patent number 9,299,793
- Issue date Mar 29, 2016
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a thick bottom field plate trench having...
- Patent number 9,202,882
- Issue date Dec 1, 2015
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PACKAGE WITH CLIP DIRECTLY CONNECTED TO OBLONG ELECTRIC CONNECTION...
- Publication number 20250014972
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Tomasz NAEVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Resistance Integrated Snubber for Power Switching Device
- Publication number 20200185377
- Publication date Jun 11, 2020
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BLOCK COMMUTATION TO REDUCE INVERTER LOSSES FOR BLDC DRIVES
- Publication number 20190157994
- Publication date May 23, 2019
- Infineon Technologies Americas Corp.
- Venkata Anand Prabhala
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Controlled Resistance Integrated Snubber for Power Switching Device
- Publication number 20180182750
- Publication date Jun 28, 2018
- Infineon Technologies Americas Corp.
- Hugo Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating a Power Semiconductor Device
- Publication number 20170330942
- Publication date Nov 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Shallow and Narrow Trench FET
- Publication number 20170213909
- Publication date Jul 27, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Structure Having Integrated Snubb...
- Publication number 20170186861
- Publication date Jun 29, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Integrated Snubber Resistance and Re...
- Publication number 20160104773
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Source Trench and Termination Trenc...
- Publication number 20160104766
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Low RDSON and High Breakdown Voltage
- Publication number 20150325685
- Publication date Nov 12, 2015
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Contiguous Gate Trenches and Offset...
- Publication number 20140374825
- Publication date Dec 25, 2014
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Plate Trench Having a Thick Botto...
- Publication number 20140339669
- Publication date Nov 20, 2014
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Thick Bottom Field Plate Trench Having...
- Publication number 20140339670
- Publication date Nov 20, 2014
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Plate Double Trench Having a Thic...
- Publication number 20140339651
- Publication date Nov 20, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a shallow and narrow trench FETand related s...
- Publication number 20110284950
- Publication date Nov 24, 2011
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS

Kapil Kelkar

Person

Patents Grantslast 30 patents

Controlled resistance integrated snubber for power switching device

Controlled resistance integrated snubber for power switching device

Method of fabricating a power semiconductor device

Block commutation to reduce inverter losses for BLDC drives

Method of forming a semiconductor structure having integrated snubb...

Power semiconductor device with contiguous gate trenches and offset...

Semiconductor device with a field plate double trench having a thic...

Method for fabricating a shallow and narrow trench FET and related...

Semiconductor structure having integrated snubber resistance

Power semiconductor device with source trench and termination trenc...

Semiconductor device with a field plate trench having a thick botto...

Semiconductor device with a thick bottom field plate trench having...

Patents Applicationslast 30 patents

PACKAGE WITH CLIP DIRECTLY CONNECTED TO OBLONG ELECTRIC CONNECTION...

Controlled Resistance Integrated Snubber for Power Switching Device

BLOCK COMMUTATION TO REDUCE INVERTER LOSSES FOR BLDC DRIVES

Controlled Resistance Integrated Snubber for Power Switching Device

Method of Fabricating a Power Semiconductor Device

Method for Fabricating a Shallow and Narrow Trench FET

Method of Forming a Semiconductor Structure Having Integrated Snubb...

Semiconductor Structure Having Integrated Snubber Resistance and Re...

Power Semiconductor Device with Source Trench and Termination Trenc...

Power Semiconductor Device with Low RDSON and High Breakdown Voltage

Power Semiconductor Device with Contiguous Gate Trenches and Offset...

Semiconductor Device with a Field Plate Trench Having a Thick Botto...

Semiconductor Device with a Thick Bottom Field Plate Trench Having...

Semiconductor Device with a Field Plate Double Trench Having a Thic...

Method for fabricating a shallow and narrow trench FETand related s...