Karen H. R. Kirmse

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Normally-on gallium nitride based transistor with p-type gate
- Patent number 11,978,790
- Issue date May 7, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Selective etches for reducing cone formation in shallow trench isol...
- Patent number 11,908,729
- Issue date Feb 20, 2024
- Texas Instruments Incorporated
- Karen Hildegard Ralston Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for packaging stress-sensitive micro-electro-mechanical...
- Patent number 11,498,831
- Issue date Nov 15, 2022
- Texas Instruments Incorporated
- Kurt Peter Wachtler
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Selective etches for reducing cone formation in shallow trench isol...
- Patent number 11,171,035
- Issue date Nov 9, 2021
- Texas Instruments Incorporated
- Karen Hildegard Ralston Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for packaging stress-sensitive micro-electro-mechanical...
- Patent number 10,723,616
- Issue date Jul 28, 2020
- Texas Instruments Incorporated
- Kurt Peter Wachtler
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Selective etches for reducing cone formation in shallow trench isol...
- Patent number 10,453,738
- Issue date Oct 22, 2019
- Texas Instruments Incorporated
- Karen Hildegard Ralston Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for packaging stress-sensitive micro-electro-mechanical...
- Patent number 10,233,074
- Issue date Mar 19, 2019
- Texas Instruments Incorporated
- Kurt Peter Wachtler
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Structure and method for packaging stress-sensitive micro-electro-m...
- Patent number 9,896,330
- Issue date Feb 20, 2018
- Texas Instruments Incorporated
- Kurt Peter Wachtler
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Enhanced lateral cavity etch
- Patent number 9,607,847
- Issue date Mar 28, 2017
- Texas Instruments Incorporated
- Brian E. Goodlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cavity process etch undercut monitor
- Patent number 8,652,971
- Issue date Feb 18, 2014
- Texas Instruments Incorporated
- Ricky Alan Jackson
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Cavity open process to improve undercut
- Patent number 8,642,370
- Issue date Feb 4, 2014
- Texas Instruments Incorporated
- Ricky Alan Jackson
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for manufacturing a semiconductor device having improved acr...
- Patent number 7,569,464
- Issue date Aug 4, 2009
- Texas Instruments Incorporated
- Karen H. R. Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device using a sidewall sp...
- Patent number 7,229,869
- Issue date Jun 12, 2007
- Texas Instruments Incorporated
- Jong Shik Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming single damascene via or trench cavities and for...
- Patent number 7,214,609
- Issue date May 8, 2007
- Texas Instruments Incorporated
- Ping Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Encapsulated spacer with low dielectric constant material to reduce...
- Patent number 7,033,897
- Issue date Apr 25, 2006
- Texas Instruments Incorporated
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20240274705
- Publication date Aug 15, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELECTIVE ETCHES FOR REDUCING CONE FORMATION IN SHALLOW TRENCH ISOL...
- Publication number 20240105501
- Publication date Mar 28, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Karen Hildegard Ralston Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20220173234
- Publication date Jun 2, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELECTIVE ETCHES FOR REDUCING CONE FORMATION IN SHALLOW TRENCH ISOL...
- Publication number 20220005729
- Publication date Jan 6, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Karen Hildegard Ralston Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-MECHANICAL...
- Publication number 20200354214
- Publication date Nov 12, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Kurt Peter Wachtler
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SELECTIVE ETCHES FOR REDUCING CONE FORMATION IN SHALLOW TRENCH ISOL...
- Publication number 20200006118
- Publication date Jan 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Karen Hildegard Ralston Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ETCHES FOR REDUCING CONE FORMATION IN SHALLOW TRENCH ISOL...
- Publication number 20190198382
- Publication date Jun 27, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Karen Hildegard Ralston Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-MECHANICAL...
- Publication number 20190169019
- Publication date Jun 6, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Kurt Peter Wachtler
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
STRUCTURES FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-MECHANICAL...
- Publication number 20180127266
- Publication date May 10, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Kurt Peter Wachtler
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
STRUCTURE AND METHOD FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-M...
- Publication number 20170197823
- Publication date Jul 13, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Kurt Peter Wachtler
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
ENHANCED LATERAL CAVITY ETCH
- Publication number 20170178916
- Publication date Jun 22, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Brian E. Goodlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED AREA COVER PLATE FOR INTEGRATED INFRARED SENSOR
- Publication number 20130062720
- Publication date Mar 14, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Rick L. Wise
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING IMPROVED ACR...
- Publication number 20080153273
- Publication date Jun 26, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Karen H.R. Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device using a sidewall sp...
- Publication number 20060205169
- Publication date Sep 14, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Jong Shik Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Encapsulated spacer with low dielectric constant material to reduce...
- Publication number 20050263834
- Publication date Dec 1, 2005
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Encapsulated spacer with low dielectric constant material to reduce...
- Publication number 20050087775
- Publication date Apr 28, 2005
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a via in a substrate
- Publication number 20040234894
- Publication date Nov 25, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Karen H. R. Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming single damascene via or trench cavities and for...
- Publication number 20040110369
- Publication date Jun 10, 2004
- Ping Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Karen H. R. Kirmse

Person

Patents Grantslast 30 patents

Normally-on gallium nitride based transistor with p-type gate

Selective etches for reducing cone formation in shallow trench isol...

Structures for packaging stress-sensitive micro-electro-mechanical...

Selective etches for reducing cone formation in shallow trench isol...

Structures for packaging stress-sensitive micro-electro-mechanical...

Selective etches for reducing cone formation in shallow trench isol...

Structures for packaging stress-sensitive micro-electro-mechanical...

Structure and method for packaging stress-sensitive micro-electro-m...

Enhanced lateral cavity etch

Cavity process etch undercut monitor

Cavity open process to improve undercut

Method for manufacturing a semiconductor device having improved acr...

Method for manufacturing a semiconductor device using a sidewall sp...

Methods for forming single damascene via or trench cavities and for...

Encapsulated spacer with low dielectric constant material to reduce...

Patents Applicationslast 30 patents

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

SELECTIVE ETCHES FOR REDUCING CONE FORMATION IN SHALLOW TRENCH ISOL...

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

SELECTIVE ETCHES FOR REDUCING CONE FORMATION IN SHALLOW TRENCH ISOL...

STRUCTURES FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-MECHANICAL...

SELECTIVE ETCHES FOR REDUCING CONE FORMATION IN SHALLOW TRENCH ISOL...

SELECTIVE ETCHES FOR REDUCING CONE FORMATION IN SHALLOW TRENCH ISOL...

STRUCTURES FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-MECHANICAL...

STRUCTURES FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-MECHANICAL...

STRUCTURE AND METHOD FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-M...

ENHANCED LATERAL CAVITY ETCH

EXTENDED AREA COVER PLATE FOR INTEGRATED INFRARED SENSOR

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING IMPROVED ACR...

Method for manufacturing a semiconductor device using a sidewall sp...

Encapsulated spacer with low dielectric constant material to reduce...

Encapsulated spacer with low dielectric constant material to reduce...

Method for forming a via in a substrate

Methods for forming single damascene via or trench cavities and for...