Karla Romero

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device comprising isolation trenches inducing differe...
- Patent number 8,138,571
- Issue date Mar 20, 2012
- GLOBALFOUNDRIES Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strain source using silicon/germanium in globally strained...
- Patent number 7,999,326
- Issue date Aug 16, 2011
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a TEOS cap layer at low temperature and reduced d...
- Patent number 7,807,233
- Issue date Oct 5, 2010
- GLOBALFOUNDRIES Inc.
- Hartmut Ruelke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Technique for locally adapting transistor characteristics by using...
- Patent number 7,745,334
- Issue date Jun 29, 2010
- Advanced Micro Devices, Inc.
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strain source using silicon/germanium in globally strained...
- Patent number 7,719,060
- Issue date May 18, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure comprising field effect transistors with st...
- Patent number 7,608,499
- Issue date Oct 27, 2009
- Advanced Micro Devices, Inc.
- Karla Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device comprising isolation trench...
- Patent number 7,547,610
- Issue date Jun 16, 2009
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a transistor having raised drain and source r...
- Patent number 7,279,389
- Issue date Oct 9, 2007
- Advanced Micro Devices, Inc.
- Karla Romero
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED...
- Publication number 20100187629
- Publication date Jul 29, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...
- Publication number 20090236667
- Publication date Sep 24, 2009
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED...
- Publication number 20090108361
- Publication date Apr 30, 2009
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...
- Publication number 20080079085
- Publication date Apr 3, 2008
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR LOCALLY ADAPTING TRANSISTOR CHARACTERISTICS BY USING...
- Publication number 20080081471
- Publication date Apr 3, 2008
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE COMPRISING FIELD EFFECT TRANSISTORS WITH ST...
- Publication number 20080023771
- Publication date Jan 31, 2008
- Karla Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a gate dielectric of different blocking...
- Publication number 20060244069
- Publication date Nov 2, 2006
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for forming a transistor having raised drain and source r...
- Publication number 20060223250
- Publication date Oct 5, 2006
- Karla Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a teos cap layer at low temperature and reduced d...
- Publication number 20050048222
- Publication date Mar 3, 2005
- Hartmut Ruelke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Karla Romero

Person

Patents Grantslast 30 patents

Semiconductor device comprising isolation trenches inducing differe...

Tensile strain source using silicon/germanium in globally strained...

Method of forming a TEOS cap layer at low temperature and reduced d...

Technique for locally adapting transistor characteristics by using...

Tensile strain source using silicon/germanium in globally strained...

Semiconductor structure comprising field effect transistors with st...

Method of making a semiconductor device comprising isolation trench...

Technique for forming a transistor having raised drain and source r...

Patents Applicationslast 30 patents

TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED...

SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...

TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED...

SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...

TECHNIQUE FOR LOCALLY ADAPTING TRANSISTOR CHARACTERISTICS BY USING...

SEMICONDUCTOR STRUCTURE COMPRISING FIELD EFFECT TRANSISTORS WITH ST...

Semiconductor device having a gate dielectric of different blocking...

Technique for forming a transistor having raised drain and source r...

Method of forming a teos cap layer at low temperature and reduced d...