Karthik Padmanabhan

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
IGBT light load efficiency
- Patent number 11,756,993
- Issue date Sep 12, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,749,716
- Issue date Sep 5, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming super-junction corner and termination structure...
- Patent number 11,508,819
- Issue date Nov 22, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Improving IGBT light load efficiency
- Patent number 11,342,410
- Issue date May 24, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction corner and termination structure with graded sidewalls
- Patent number 11,038,022
- Issue date Jun 15, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,031,465
- Issue date Jun 8, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined IGBT and superjunction MOSFET device with tuned switching...
- Patent number 10,931,276
- Issue date Feb 23, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Bum-Seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming including superjunction...
- Patent number 10,755,931
- Issue date Aug 25, 2020
- Alpha and Omega Semiconductor Incorporated
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT superjunction MOSFET structure
- Patent number 10,644,102
- Issue date May 5, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction corner and termination structure with improved break...
- Patent number 10,580,868
- Issue date Mar 3, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a lateral super-junction MOSFET device and termi...
- Patent number 10,446,679
- Issue date Oct 15, 2019
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superjunction structure formed using...
- Patent number 10,276,387
- Issue date Apr 30, 2019
- Alpha and Omega Semiconductor Incorporated
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a lateral super-junction MOSFET device and termi...
- Patent number 10,243,072
- Issue date Mar 26, 2019
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral super-junction MOSFET device and termination structure
- Patent number 9,991,380
- Issue date Jun 5, 2018
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral super-junction MOSFET device and termination structure
- Patent number 9,722,073
- Issue date Aug 1, 2017
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superjunction structure formed using...
- Patent number 9,595,609
- Issue date Mar 14, 2017
- Alpha and Omega Semiconductor Incorporated
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally on high voltage switch
- Patent number 9,530,885
- Issue date Dec 27, 2016
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for nanotube MOSFET
- Patent number 9,508,805
- Issue date Nov 29, 2016
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming lateral super-junction structure
- Patent number 9,450,045
- Issue date Sep 20, 2016
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design by metal strapping guard ring trenches shorted t...
- Patent number 9,397,154
- Issue date Jul 19, 2016
- Alpha and Omega Semiconductor Incorporated
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral super-junction MOSFET device and termination structure
- Patent number 9,312,381
- Issue date Apr 12, 2016
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superjunction structure formed using...
- Patent number 9,171,949
- Issue date Oct 27, 2015
- Alpha and Omega Semiconductor Incorporated
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design by metal strapping guard ring trenches shorted t...
- Patent number 9,153,653
- Issue date Oct 6, 2015
- Alpha & Omega Semiconductor, Inc.
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally on high voltage switch
- Patent number 9,082,790
- Issue date Jul 14, 2015
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage fast recovery trench diode
- Patent number 8,907,414
- Issue date Dec 9, 2014
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage fast recovery trench diode
- Patent number 8,710,585
- Issue date Apr 29, 2014
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE
- Publication number 20240332287
- Publication date Oct 3, 2024
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhibo Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT LIGHT LOAD EFFICIENCY
- Publication number 20220262898
- Publication date Aug 18, 2022
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20210273046
- Publication date Sep 2, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...
- Publication number 20210257461
- Publication date Aug 19, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVING IGBT LIGHT LOAD EFFICIENCY
- Publication number 20210098569
- Publication date Apr 1, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH GRADED SIDEWALLS
- Publication number 20200161431
- Publication date May 21, 2020
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH IMPROVED BREAK...
- Publication number 20190305088
- Publication date Oct 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190273131
- Publication date Sep 5, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING INCLUDING SUPERJUNCTION...
- Publication number 20190214261
- Publication date Jul 11, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SGT SUPERJUNCTION MOSFET STRUCTURE
- Publication number 20190206988
- Publication date Jul 4, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...
- Publication number 20190165169
- Publication date May 30, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190006461
- Publication date Jan 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...
- Publication number 20180254342
- Publication date Sep 6, 2018
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMINATION STRUCTURE
- Publication number 20170365710
- Publication date Dec 21, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERJUNCTION STRUCTURE FORMED USING...
- Publication number 20170148632
- Publication date May 25, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMINATION STRUCTURE
- Publication number 20160380097
- Publication date Dec 29, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION DESIGN BY METAL STRAPPING GUARD RING TRENCHES SHORTED T...
- Publication number 20160099307
- Publication date Apr 7, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERJUNCTION STRUCTURE FORMED USING...
- Publication number 20160087095
- Publication date Mar 24, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY ON HIGH VOLTAGE SWITCH
- Publication number 20150279989
- Publication date Oct 1, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION DESIGN BY METAL STRAPPING GUARD RING TRENCHES SHORTED T...
- Publication number 20150162410
- Publication date Jun 11, 2015
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY ON HIGH VOLTAGE SWITCH
- Publication number 20150021682
- Publication date Jan 22, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION DESIGN FOR NANOTUBE MOSFET
- Publication number 20140332919
- Publication date Nov 13, 2014
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FAST RECOVERY TRENCH DIODE
- Publication number 20140239436
- Publication date Aug 28, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS

Karthik Padmanabhan

Person

Patents Grantslast 30 patents

IGBT light load efficiency

Semiconductor device incorporating epitaxial layer field stop zone

Method for forming super-junction corner and termination structure...

Improving IGBT light load efficiency

Super-junction corner and termination structure with graded sidewalls

Semiconductor device incorporating epitaxial layer field stop zone

Combined IGBT and superjunction MOSFET device with tuned switching...

Semiconductor device and method of forming including superjunction...

SGT superjunction MOSFET structure

Super-junction corner and termination structure with improved break...

Method for forming a lateral super-junction MOSFET device and termi...

Semiconductor device including superjunction structure formed using...

Method for forming a lateral super-junction MOSFET device and termi...

Lateral super-junction MOSFET device and termination structure

Lateral super-junction MOSFET device and termination structure

Semiconductor device including superjunction structure formed using...

Normally on high voltage switch

Termination design for nanotube MOSFET

Method for forming lateral super-junction structure

Termination design by metal strapping guard ring trenches shorted t...

Lateral super-junction MOSFET device and termination structure

Semiconductor device including superjunction structure formed using...

Termination design by metal strapping guard ring trenches shorted t...

Normally on high voltage switch

High voltage fast recovery trench diode

High voltage fast recovery trench diode

Patents Applicationslast 30 patents

DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE

IGBT LIGHT LOAD EFFICIENCY

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...

IMPROVING IGBT LIGHT LOAD EFFICIENCY

SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH GRADED SIDEWALLS

SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH IMPROVED BREAK...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING INCLUDING SUPERJUNCTION...

NOVEL SGT SUPERJUNCTION MOSFET STRUCTURE

METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...

LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMINATION STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING SUPERJUNCTION STRUCTURE FORMED USING...

LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMINATION STRUCTURE

TERMINATION DESIGN BY METAL STRAPPING GUARD RING TRENCHES SHORTED T...

SEMICONDUCTOR DEVICE INCLUDING SUPERJUNCTION STRUCTURE FORMED USING...

NORMALLY ON HIGH VOLTAGE SWITCH

TERMINATION DESIGN BY METAL STRAPPING GUARD RING TRENCHES SHORTED T...

NORMALLY ON HIGH VOLTAGE SWITCH

TERMINATION DESIGN FOR NANOTUBE MOSFET

HIGH VOLTAGE FAST RECOVERY TRENCH DIODE