Karthik Sarpatwari

Person

Meridian, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device having 2-transistor memory cell and access line plate
- Patent number 12,266,660
- Issue date Apr 1, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having 2-transistor vertical memory cell and separate...
- Patent number 12,219,750
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Eric S. Carman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drift aware read operations
- Patent number 12,176,029
- Issue date Dec 24, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-step pre-read for write operations in memory devices
- Patent number 12,106,803
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies comprising hydrogen diffused within two or mo...
- Patent number 12,101,946
- Issue date Sep 24, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Identify the programming mode of memory cells during reading of the...
- Patent number 12,080,359
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell and shield s...
- Patent number 12,080,331
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having shared access line for 2-transistor vertical m...
- Patent number 12,069,853
- Issue date Aug 20, 2024
- Micron Technology, Inc.
- Kamal M. Karda
Information Patent Grant
Evaluation of background leakage to select write voltage in memory...
- Patent number 12,014,784
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Nevil N. Gajera
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical 2-transistor memory cell
- Patent number 11,985,806
- Issue date May 14, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell and wrapped...
- Patent number 11,950,426
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having 2-transistor vertical memory cell and shield s...
- Patent number 11,950,402
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having shared read/write access line for 2-transistor...
- Patent number 11,942,136
- Issue date Mar 26, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performing refresh operations on memory cells
- Patent number 11,942,139
- Issue date Mar 26, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Dirty write on power off
- Patent number 11,923,007
- Issue date Mar 5, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Accessing a multi-level memory cell
- Patent number 11,894,078
- Issue date Feb 6, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Weighted wear leveling for improving uniformity
- Patent number 11,875,867
- Issue date Jan 16, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor memory cell and access line plate
- Patent number 11,871,589
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for pre-read scan of memory devices
- Patent number 11,862,226
- Issue date Jan 2, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies comprising hydrogen diffused within two or mo...
- Patent number 11,832,454
- Issue date Nov 28, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverters, and related memory devices and electronic systems
- Patent number 11,791,391
- Issue date Oct 17, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Cache memory with randomized eviction
- Patent number 11,782,830
- Issue date Oct 10, 2023
- Micron Technologies, Inc.
- Amitava Majumdar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-state programming of memory cells
- Patent number 11,783,902
- Issue date Oct 10, 2023
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell and a common...
- Patent number 11,776,907
- Issue date Oct 3, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell and separate...
- Patent number 11,778,806
- Issue date Oct 3, 2023
- Micron Technology, Inc.
- Eric S. Carman
- G11 - INFORMATION STORAGE
Information Patent Grant
Cache memory with randomized eviction
- Patent number 11,775,431
- Issue date Oct 3, 2023
- Micron Technologies, Inc.
- Amitava Majumdar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Increase of a sense current in memory
- Patent number 11,735,258
- Issue date Aug 22, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Single word line gain cell with complementary read write channel
- Patent number 11,727,983
- Issue date Aug 15, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar read retry
- Patent number 11,728,005
- Issue date Aug 15, 2023
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Data-based polarity write operations
- Patent number 11,710,528
- Issue date Jul 25, 2023
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Drift Aware Read Operations
- Publication number 20250118366
- Publication date Apr 10, 2025
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING 2-TRANSISTOR MEMORY CELL STRUCTURE FOR NEUR...
- Publication number 20250029638
- Publication date Jan 23, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES
- Publication number 20250014641
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20240420750
- Publication date Dec 19, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING SHARED ACCESS LINE FOR 2-TRANSISTOR VERTICAL M...
- Publication number 20240414911
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Kamal M. Karda
Information Patent Application
Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...
- Publication number 20240413154
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IDENTIFY THE PROGRAMMING MODE OF MEMORY CELLS DURING READING OF THE...
- Publication number 20240404606
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL 2-TRANSISTOR MEMORY CELL
- Publication number 20240373619
- Publication date Nov 7, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY...
- Publication number 20240331781
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Nevil N. Gajera
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20240251543
- Publication date Jul 25, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...
- Publication number 20240251563
- Publication date Jul 25, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR...
- Publication number 20240233797
- Publication date Jul 11, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS
- Publication number 20240188273
- Publication date Jun 6, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS AND CHARGE...
- Publication number 20240188274
- Publication date Jun 6, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR MEMORY CELL AND ACCESS LINE PLATE
- Publication number 20240138158
- Publication date Apr 25, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY
- Publication number 20240096433
- Publication date Mar 21, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...
- Publication number 20240074216
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE...
- Publication number 20240074138
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
Information Patent Application
DRIFT CORRECTION IN SLC AND MLC MEMORY DEVICES
- Publication number 20240071483
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Christophe Vincent Antoine Laurent
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON...
- Publication number 20240047356
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE...
- Publication number 20230422471
- Publication date Dec 28, 2023
- Micron Technology, Inc.
- Eric S. Carman
- G11 - INFORMATION STORAGE
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING VERTICAL INVERTERS, AND ELECTRONI...
- Publication number 20230361118
- Publication date Nov 9, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20230298652
- Publication date Sep 21, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
INVERTERS, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
- Publication number 20230299163
- Publication date Sep 21, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adaptively Programming Memory Cells in Different Modes to Optimize...
- Publication number 20230268005
- Publication date Aug 24, 2023
- Micron Technology, Inc.
- Karthik Sarpatwari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON...
- Publication number 20230269922
- Publication date Aug 24, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
Self-Selecting Memory Cells Configured to Store More Than One Bit p...
- Publication number 20230267996
- Publication date Aug 24, 2023
- Micron Technology, Inc.
- Lingming Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20230262954
- Publication date Aug 17, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...
- Publication number 20230240077
- Publication date Jul 27, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IDENTIFY THE PROGRAMMING MODE OF MEMORY CELLS DURING READING OF THE...
- Publication number 20230230642
- Publication date Jul 20, 2023
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE

Karthik Sarpatwari

Person

Patents Grantslast 30 patents

Memory device having 2-transistor memory cell and access line plate

Memory device having 2-transistor vertical memory cell and separate...

Drift aware read operations

Multi-step pre-read for write operations in memory devices

Integrated assemblies comprising hydrogen diffused within two or mo...

Identify the programming mode of memory cells during reading of the...

Memory device having 2-transistor vertical memory cell and shield s...

Memory device having shared access line for 2-transistor vertical m...

Evaluation of background leakage to select write voltage in memory...

Vertical 2-transistor memory cell

Memory device having 2-transistor vertical memory cell and wrapped...

Memory device having 2-transistor vertical memory cell and shield s...

Memory device having shared read/write access line for 2-transistor...

Performing refresh operations on memory cells

Dirty write on power off

Accessing a multi-level memory cell

Weighted wear leveling for improving uniformity

Memory device having 2-transistor memory cell and access line plate

Systems and methods for pre-read scan of memory devices

Integrated assemblies comprising hydrogen diffused within two or mo...

Inverters, and related memory devices and electronic systems

Cache memory with randomized eviction

Multi-state programming of memory cells

Memory device having 2-transistor vertical memory cell and a common...

Memory device having 2-transistor vertical memory cell and separate...

Cache memory with randomized eviction

Increase of a sense current in memory

Single word line gain cell with complementary read write channel

Bipolar read retry

Data-based polarity write operations

Patents Applicationslast 30 patents

Drift Aware Read Operations

MEMORY DEVICE INCLUDING 2-TRANSISTOR MEMORY CELL STRUCTURE FOR NEUR...

MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

MEMORY DEVICE HAVING SHARED ACCESS LINE FOR 2-TRANSISTOR VERTICAL M...

Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...

IDENTIFY THE PROGRAMMING MODE OF MEMORY CELLS DURING READING OF THE...

VERTICAL 2-TRANSISTOR MEMORY CELL

EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...

MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR...

MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS

MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS AND CHARGE...

MEMORY DEVICE HAVING 2-TRANSISTOR MEMORY CELL AND ACCESS LINE PLATE

WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY

Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE...

DRIFT CORRECTION IN SLC AND MLC MEMORY DEVICES

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE...

MICROELECTRONIC DEVICES INCLUDING VERTICAL INVERTERS, AND ELECTRONI...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

INVERTERS, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS

Adaptively Programming Memory Cells in Different Modes to Optimize...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON...

Self-Selecting Memory Cells Configured to Store More Than One Bit p...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...

IDENTIFY THE PROGRAMMING MODE OF MEMORY CELLS DURING READING OF THE...