Katja Huy

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Spacer for a gate electrode having tensile stress and a method of f...
- Patent number 8,847,205
- Issue date Sep 30, 2014
- GLOBALFOUNDRIES Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer for a gate electrode having tensile stress and a method of f...
- Patent number 8,557,667
- Issue date Oct 15, 2013
- Globalfoundries Inc.
- Hartmut Rülke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving the wafer-to-wafer thickness uniformity of sili...
- Patent number 8,084,088
- Issue date Dec 27, 2011
- GLOBALFOUNDRIES Inc.
- Katja Huy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a TEOS cap layer at low temperature and reduced d...
- Patent number 7,807,233
- Issue date Oct 5, 2010
- GLOBALFOUNDRIES Inc.
- Hartmut Ruelke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a tungsten interconnect structure with enhanced...
- Patent number 7,442,638
- Issue date Oct 28, 2008
- Advanced Micro Devices, Inc.
- Kai Frohberg
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitrogen-free ARC layer and a method of manufacturing the same
- Patent number 7,326,646
- Issue date Feb 5, 2008
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a spacer for a line element by using an etch...
- Patent number 7,109,086
- Issue date Sep 19, 2006
- Advanced Micro Devices, Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming recessed sidewall spacers for a polysilicon line
- Patent number 7,005,358
- Issue date Feb 28, 2006
- Advanced Micro Devices, Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPACER FOR A GATE ELECTRODE HAVING TENSILE STRESS AND A METHOD OF F...
- Publication number 20140011302
- Publication date Jan 9, 2014
- GLOBALFOUNDRIES INC.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING COPPER-BASED CONTACT PLUG AND A MET...
- Publication number 20070096221
- Publication date May 3, 2007
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A TUNGSTEN INTERCONNECT STRUCTURE WITH ENHANCED...
- Publication number 20070077749
- Publication date Apr 5, 2007
- Kai Frohberg
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nitrogen-free ARC layer and a method of manufacturing the same
- Publication number 20050208755
- Publication date Sep 22, 2005
- Hartmut Ruelke
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Technique for forming a spacer for a line element by using an etch...
- Publication number 20050142828
- Publication date Jun 30, 2005
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer for a gate electrode having tensile stress and a method of f...
- Publication number 20050136606
- Publication date Jun 23, 2005
- Hartmut Rulke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a teos cap layer at low temperature and reduced d...
- Publication number 20050048222
- Publication date Mar 3, 2005
- Hartmut Ruelke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of improving the wafer-to-wafer thickness uniformity of sili...
- Publication number 20050026434
- Publication date Feb 3, 2005
- Katja Huy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Technique for forming recessed sidewall spacers for a polysilicon line
- Publication number 20050026380
- Publication date Feb 3, 2005
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Spacer for a gate electrode having tensile stress and a method of f...

Spacer for a gate electrode having tensile stress and a method of f...

Method of improving the wafer-to-wafer thickness uniformity of sili...

Method of forming a TEOS cap layer at low temperature and reduced d...

Method for forming a tungsten interconnect structure with enhanced...

Nitrogen-free ARC layer and a method of manufacturing the same

Technique for forming a spacer for a line element by using an etch...

Technique for forming recessed sidewall spacers for a polysilicon line

Patents Applicationslast 30 patents

SPACER FOR A GATE ELECTRODE HAVING TENSILE STRESS AND A METHOD OF F...

SEMICONDUCTOR DEVICE COMPRISING COPPER-BASED CONTACT PLUG AND A MET...

METHOD FOR FORMING A TUNGSTEN INTERCONNECT STRUCTURE WITH ENHANCED...

Nitrogen-free ARC layer and a method of manufacturing the same

Technique for forming a spacer for a line element by using an etch...

Spacer for a gate electrode having tensile stress and a method of f...

Method of forming a teos cap layer at low temperature and reduced d...

Method of improving the wafer-to-wafer thickness uniformity of sili...

Technique for forming recessed sidewall spacers for a polysilicon line