Katrin Reiche

Person

Goltzscha, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device comprising contact structures with protection...
- Patent number 9,590,056
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming protection layers on sidewalls of contact etch...
- Patent number 9,269,809
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried sublevel metallizations for improved transistor density
- Patent number 8,941,182
- Issue date Jan 27, 2015
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K gate electrode structure formed after transistor fabrication...
- Patent number 8,883,582
- Issue date Nov 11, 2014
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective shrinkage of contact elements in a semiconductor device
- Patent number 8,536,050
- Issue date Sep 17, 2013
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising contact elements with silicided sid...
- Patent number 8,536,052
- Issue date Sep 17, 2013
- GLOBALFOUNDRIES Inc.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress reduction in chip packaging by a stress compensation region...
- Patent number 8,497,583
- Issue date Jul 30, 2013
- GLOBALFOUNDRIES Inc.
- Dmytro Chumakov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming conductive contacts with reduced dimensions
- Patent number 8,492,217
- Issue date Jul 23, 2013
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K gate electrode structure formed after transistor fabrication...
- Patent number 8,470,661
- Issue date Jun 25, 2013
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for MOS devices by adapting a spacer width pri...
- Patent number 8,440,534
- Issue date May 14, 2013
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for adjusting the height of a gate electrode in a semiconduc...
- Patent number 8,361,844
- Issue date Jan 29, 2013
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double deposition of a stress-inducing layer in an interlayer diele...
- Patent number 8,349,744
- Issue date Jan 8, 2013
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts and vias of a semiconductor device formed by a hard mask a...
- Patent number 8,318,598
- Issue date Nov 27, 2012
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION...
- Publication number 20160099321
- Publication date Apr 7, 2016
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION...
- Publication number 20140264641
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION...
- Publication number 20130252409
- Publication date Sep 26, 2013
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING INTEGRATED CIRCUITS WITH THE ELIMINATION OF...
- Publication number 20130189822
- Publication date Jul 25, 2013
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CONDUCTIVE CONTACTS WITH REDUCED DIMENSIONS
- Publication number 20130072016
- Publication date Mar 21, 2013
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Sublevel Metallizations for Improved Transistor Density
- Publication number 20120313176
- Publication date Dec 13, 2012
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Contact Elements with Silicided Sid...
- Publication number 20120161324
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Metal Silicide Regions
- Publication number 20120115326
- Publication date May 10, 2012
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Shrinkage of Contact Elements in a Semiconductor Device
- Publication number 20110291292
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress Reduction in Chip Packaging by a Stress Compensation Region...
- Publication number 20110291299
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Dmytro Chumakov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD ADJUSTMENT FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PRI...
- Publication number 20110223732
- Publication date Sep 15, 2011
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ADJUSTING THE HEIGHT OF A GATE ELECTRODE IN A SEMICONDUC...
- Publication number 20100190309
- Publication date Jul 29, 2010
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION...
- Publication number 20100133628
- Publication date Jun 3, 2010
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS AND VIAS OF A SEMICONDUCTOR DEVICE FORMED BY A HARD MASK A...
- Publication number 20100078823
- Publication date Apr 1, 2010
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold adjustment for MOS devices by adapting a spacer width pri...
- Publication number 20090321850
- Publication date Dec 31, 2009
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS FORMED IN THE SAME ACTIVE...
- Publication number 20090294868
- Publication date Dec 3, 2009
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE DEPOSITION OF A STRESS-INDUCING LAYER IN AN INTERLAYER DIELE...
- Publication number 20090243049
- Publication date Oct 1, 2009
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ADJUSTING THE HEIGHT OF A GATE ELECTRODE IN A SEMICONDUC...
- Publication number 20090108336
- Publication date Apr 30, 2009
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS

Katrin Reiche

Person

Patents Grantslast 30 patents

Semiconductor device comprising contact structures with protection...

Methods for forming protection layers on sidewalls of contact etch...

Buried sublevel metallizations for improved transistor density

High-K gate electrode structure formed after transistor fabrication...

Selective shrinkage of contact elements in a semiconductor device

Semiconductor device comprising contact elements with silicided sid...

Stress reduction in chip packaging by a stress compensation region...

Methods of forming conductive contacts with reduced dimensions

High-K gate electrode structure formed after transistor fabrication...

Threshold adjustment for MOS devices by adapting a spacer width pri...

Method for adjusting the height of a gate electrode in a semiconduc...

Double deposition of a stress-inducing layer in an interlayer diele...

Contacts and vias of a semiconductor device formed by a hard mask a...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION...

SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION...

HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION...

METHODS OF FABRICATING INTEGRATED CIRCUITS WITH THE ELIMINATION OF...

METHODS OF FORMING CONDUCTIVE CONTACTS WITH REDUCED DIMENSIONS

Buried Sublevel Metallizations for Improved Transistor Density

Semiconductor Device Comprising Contact Elements with Silicided Sid...

Method of Forming Metal Silicide Regions

Selective Shrinkage of Contact Elements in a Semiconductor Device

Stress Reduction in Chip Packaging by a Stress Compensation Region...

THRESHOLD ADJUSTMENT FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PRI...

METHOD FOR ADJUSTING THE HEIGHT OF A GATE ELECTRODE IN A SEMICONDUC...

HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION...

CONTACTS AND VIAS OF A SEMICONDUCTOR DEVICE FORMED BY A HARD MASK A...

Threshold adjustment for MOS devices by adapting a spacer width pri...

DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS FORMED IN THE SAME ACTIVE...

DOUBLE DEPOSITION OF A STRESS-INDUCING LAYER IN AN INTERLAYER DIELE...

METHOD FOR ADJUSTING THE HEIGHT OF A GATE ELECTRODE IN A SEMICONDUC...