Katsuhide Manabe

Person

Nishikasugai, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,867,800
- Issue date Jan 11, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,332,366
- Issue date Feb 19, 2008
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contamination resistant fiber sheet
- Patent number 7,294,391
- Issue date Nov 13, 2007
- Kabushiki Kaisha Suzutora
- Masayuki Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,138,286
- Issue date Nov 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 7,001,790
- Issue date Feb 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,984,536
- Issue date Jan 10, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,830,992
- Issue date Dec 14, 2004
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a light-emitting semiconductor device
- Patent number 6,607,595
- Issue date Aug 19, 2003
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 6,593,599
- Issue date Jul 15, 2003
- Japan Science and Technology Corporation
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride group compound semiconductor
- Patent number 6,472,690
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device
- Patent number 6,472,689
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 6,362,017
- Issue date Mar 26, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 6,265,726
- Issue date Jul 24, 2001
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device using gallium nitride group com...
- Patent number 6,249,012
- Issue date Jun 19, 2001
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device of gallium nitride compound semiconductor
- Patent number RE36747
- Issue date Jun 27, 2000
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- 257 - Active solid-state devices
Information Patent Grant
Light-emitting semiconductor device using group III Nitrogen compou...
- Patent number 6,005,258
- Issue date Dec 21, 1999
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device using nitrogen-Group III compound
- Patent number 5,905,276
- Issue date May 18, 1999
- Akasaki; Isamu
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 5,733,796
- Issue date Mar 31, 1998
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having group III nitride compound and enabling...
- Patent number 5,650,641
- Issue date Jul 22, 1997
- Toyoda Gosei Co., Ltd.
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sapphireless group III nitride semiconductor and method for making...
- Patent number 5,620,557
- Issue date Apr 15, 1997
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallum nitride group compound semiconductor laser diode
- Patent number 5,583,879
- Issue date Dec 10, 1996
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a luminous element of III-group nitride
- Patent number 5,496,766
- Issue date Mar 5, 1996
- Pioneer Electronic Corporation
- Hiroshi Amano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device of gallium nitride compound semiconductor
- Patent number 5,408,120
- Issue date Apr 18, 1995
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride based semiconductor device...
- Patent number 5,389,571
- Issue date Feb 14, 1995
- Amano; Hiroshi
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 5,278,433
- Issue date Jan 11, 1994
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride group compound semiconductor laser diode
- Patent number 5,247,533
- Issue date Sep 21, 1993
- Toyoda Gosei Co., Ltd.
- Nobuo Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride base semiconductor device
- Patent number 5,239,188
- Issue date Aug 24, 1993
- Amano; Hiroshi
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride group semiconductor and light emitting diode compri...
- Patent number 5,218,216
- Issue date Jun 8, 1993
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching method for semiconductor
- Patent number 5,205,905
- Issue date Apr 27, 1993
- Toyoda Gosei Co., Ltd.
- Masahiro Kotaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for growing gallium nitride compound-semiconductor device...
- Patent number 5,122,845
- Issue date Jun 16, 1992
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20140239313
- Publication date Aug 28, 2014
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20120217510
- Publication date Aug 30, 2012
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20110101412
- Publication date May 5, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSPARENT CONDUCTIVE FILM AND DISPERSION-TYPE ELECTROLUMINESCENCE...
- Publication number 20090026926
- Publication date Jan 29, 2009
- FUJIFILM CORPORATION
- Masashi Shirata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20080173880
- Publication date Jul 24, 2008
- TOYODA GOSEI
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20060118821
- Publication date Jun 8, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contamination resistant fiber sheet
- Publication number 20060084335
- Publication date Apr 20, 2006
- KABUSHIKI KAISHA SUZUTORA
- Masayuki Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LIght-emitting semiconductor device using group III nitrogen compound
- Publication number 20050224834
- Publication date Oct 13, 2005
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contamination resistant fiber sheet
- Publication number 20040137812
- Publication date Jul 15, 2004
- Masayuki Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for manufacturing a gallium nitride group compound semicondu...
- Publication number 20020060326
- Publication date May 23, 2002
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Publication number 20010019849
- Publication date Sep 6, 2001
- TOTODA GOSEI CO. LTD.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS

Katsuhide Manabe

Person

Patents Grantslast 30 patents

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Contamination resistant fiber sheet

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting aluminum gallium indium nitride compound semiconduct...

Method for manufacturing a gallium nitride group compound semicondu...

Method for manufacturing a gallium nitride group compound semicondu...

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group com...

Gallium nitride group compound semiconductor

Light emitting device

Light-emitting semiconductor device using gallium nitride group com...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Light emitting semiconductor device using gallium nitride group com...

Light-emitting device of gallium nitride compound semiconductor

Light-emitting semiconductor device using group III Nitrogen compou...

Light emitting semiconductor device using nitrogen-Group III compound

Light-emitting semiconductor device using gallium nitride group com...

Semiconductor device having group III nitride compound and enabling...

Sapphireless group III nitride semiconductor and method for making...

Gallum nitride group compound semiconductor laser diode

Method for producing a luminous element of III-group nitride

Light-emitting device of gallium nitride compound semiconductor

Method of fabricating a gallium nitride based semiconductor device...

Light-emitting semiconductor device using gallium nitride group com...

Gallium nitride group compound semiconductor laser diode

Gallium nitride base semiconductor device

Gallium nitride group semiconductor and light emitting diode compri...

Dry etching method for semiconductor

Substrate for growing gallium nitride compound-semiconductor device...

Patents Applicationslast 30 patents

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

Light-emitting semiconductor device using group III nitrogen compound

TRANSPARENT CONDUCTIVE FILM AND DISPERSION-TYPE ELECTROLUMINESCENCE...

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Contamination resistant fiber sheet

LIght-emitting semiconductor device using group III nitrogen compound

Contamination resistant fiber sheet

Method for manufacturing a gallium nitride group compound semicondu...

Light-emitting aluminum gallium indium nitride compound semiconduct...