Katsuhiko Nakai

Person

Chiba, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon single crystal substrate and method of manufacturing the same
- Patent number 9,303,332
- Issue date Apr 5, 2016
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon single crystal, silicon single crys...
- Patent number 8,961,685
- Issue date Feb 24, 2015
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method of manufacturing the same
- Patent number RE45238
- Issue date Nov 11, 2014
- Siltronic AG
- Masayuki Fukuda
- 428 - Stock material or miscellaneous articles
Information Patent Grant
P-type silicon single crystal and method of manufacturing the same
- Patent number 8,872,307
- Issue date Oct 28, 2014
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing annealed wafer
- Patent number 8,835,284
- Issue date Sep 16, 2014
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Annealed wafer and manufacturing method of annealed wafer
- Patent number 8,545,622
- Issue date Oct 1, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 8,524,001
- Issue date Sep 3, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 8,524,002
- Issue date Sep 3, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the preparation of silicon wafer with reduced slip and...
- Patent number 8,382,894
- Issue date Feb 26, 2013
- Siltronic AG
- Katsuhiko Nakai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and production method therefor
- Patent number 8,357,939
- Issue date Jan 22, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method of manufacturing the same
- Patent number 8,343,618
- Issue date Jan 1, 2013
- Siltronic AG
- Masayuki Fukuda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial wafer and production method thereof
- Patent number 8,241,421
- Issue date Aug 14, 2012
- Siltronic AG
- Katsuhiko Nakai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer for semiconductor and manufacturing method thereof
- Patent number 8,197,594
- Issue date Jun 12, 2012
- Siltronic AG
- Katsuhiko Nakai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and method for manufacturing the same
- Patent number 8,142,885
- Issue date Mar 27, 2012
- Siltronic AG
- Katsuhiko Nakai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial wafer and method for producing epitaxial wafers
- Patent number 7,875,115
- Issue date Jan 25, 2011
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing p-doped and epitaxially coated semiconductor...
- Patent number 7,470,323
- Issue date Dec 30, 2008
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon semiconductor wafer and method for producing the same
- Patent number 6,548,886
- Issue date Apr 15, 2003
- Wacker NSCE Corporation
- Atsushi Ikari
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYS...
- Publication number 20130277809
- Publication date Oct 24, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING ANNEALED WAFER
- Publication number 20130273719
- Publication date Oct 17, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Single Crystal Substrate and Method Of Manufacturing The Same
- Publication number 20130161793
- Publication date Jun 27, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
P-Type Silicon Single Crystal and Method Of Manufacturing The Same
- Publication number 20130093058
- Publication date Apr 18, 2013
- SILTRONIC AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Wafer and Method For Producing The Same
- Publication number 20110156216
- Publication date Jun 30, 2011
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicone Wafer and Production Method Therefor
- Publication number 20110156215
- Publication date Jun 30, 2011
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Wafer and Production Method Thereof
- Publication number 20110084366
- Publication date Apr 14, 2011
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer and method for producing the same
- Publication number 20100164071
- Publication date Jul 1, 2010
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Wafer and Method Of Manufacturing The Same
- Publication number 20100163807
- Publication date Jul 1, 2010
- Siltronic AG
- Masayuki Fukuda
- C30 - CRYSTAL GROWTH
Information Patent Application
Annealed wafer and method for producing annealed wafer
- Publication number 20100155903
- Publication date Jun 24, 2010
- Siltronic AG
- Kazunori Ishisaka
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100047563
- Publication date Feb 25, 2010
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Wafer And Method For Manufacturing The Same
- Publication number 20080131679
- Publication date Jun 5, 2008
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Wafer For Semiconductor And Manufacturing Method Thereof
- Publication number 20080113171
- Publication date May 15, 2008
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Process For Producing P-Doped and Epitaxially Coated Semiconductor...
- Publication number 20080096371
- Publication date Apr 24, 2008
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial wafer and method for producing epitaxial wafers
- Publication number 20070178668
- Publication date Aug 2, 2007
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Annealed wafer and manufacturing method of annealed wafer
- Publication number 20070155134
- Publication date Jul 5, 2007
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH

Katsuhiko Nakai

Person

Patents Grantslast 30 patents

Silicon single crystal substrate and method of manufacturing the same

Method of manufacturing silicon single crystal, silicon single crys...

Silicon wafer and method of manufacturing the same

P-type silicon single crystal and method of manufacturing the same

Method of manufacturing annealed wafer

Annealed wafer and manufacturing method of annealed wafer

Silicon wafer and method for producing the same

Silicon wafer and method for producing the same

Process for the preparation of silicon wafer with reduced slip and...

Silicon wafer and production method therefor

Silicon wafer and method of manufacturing the same

Epitaxial wafer and production method thereof

Silicon wafer for semiconductor and manufacturing method thereof

Silicon wafer and method for manufacturing the same

Epitaxial wafer and method for producing epitaxial wafers

Process for producing p-doped and epitaxially coated semiconductor...

Silicon semiconductor wafer and method for producing the same

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYS...

METHOD OF MANUFACTURING ANNEALED WAFER

Silicon Single Crystal Substrate and Method Of Manufacturing The Same

P-Type Silicon Single Crystal and Method Of Manufacturing The Same

Silicon Wafer and Method For Producing The Same

Silicone Wafer and Production Method Therefor

Epitaxial Wafer and Production Method Thereof

Silicon wafer and method for producing the same

Silicon Wafer and Method Of Manufacturing The Same

Annealed wafer and method for producing annealed wafer

SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME

Silicon Wafer And Method For Manufacturing The Same

Silicon Wafer For Semiconductor And Manufacturing Method Thereof

Process For Producing P-Doped and Epitaxially Coated Semiconductor...

Epitaxial wafer and method for producing epitaxial wafers

Annealed wafer and manufacturing method of annealed wafer