Katsujiro Tanzawa

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor wafer with ID mark, equipment for and method of manuf...
- Patent number 7,700,381
- Issue date Apr 20, 2010
- Kabushikia Kaisha Toshiba
- Tsunetoshi Arikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of inspecting semiconductor wafer
- Patent number 7,531,462
- Issue date May 12, 2009
- Kabushiki Kaisha Toshiba
- Katsujiro Tanzawa
- G01 - MEASURING TESTING
Information Patent Grant
Element formation substrate, method of manufacturing the same, and...
- Patent number 7,510,945
- Issue date Mar 31, 2009
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer treatment method, semiconductor wafer inspectio...
- Patent number 7,314,766
- Issue date Jan 1, 2008
- Kabushiki Kaisha Toshiba
- Junji Sugamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Element formation substrate for forming semiconductor device
- Patent number 7,285,825
- Issue date Oct 23, 2007
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer with ID mark, equipment for and method of manuf...
- Patent number 7,057,259
- Issue date Jun 6, 2006
- Kabushiki Kaisha Toshiba
- Tsunetoshi Arikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making a semiconductor device using a silicon-on-insulat...
- Patent number 5,688,702
- Issue date Nov 18, 1997
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectrically isolated high and low voltage substrate regions
- Patent number 5,332,920
- Issue date Jul 26, 1994
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectrically isolated substrate with isolated high and low breakd...
- Patent number 5,097,314
- Issue date Mar 17, 1992
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectrically isolated substrate and semiconductor device using th...
- Patent number 5,049,968
- Issue date Sep 17, 1991
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectrically isolated semiconductor substrate
- Patent number 4,878,957
- Issue date Nov 7, 1989
- Kabushiki Kaisha Toshiba
- Yoshihiro Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Element formation substrate, method of manufacturing the same, and...
- Publication number 20080044983
- Publication date Feb 21, 2008
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of inspecting semiconductor wafer
- Publication number 20060281281
- Publication date Dec 14, 2006
- Katsujiro Tanzawa
- G01 - MEASURING TESTING
Information Patent Application
Semiconductor wafer with ID mark, equipment for and method of manuf...
- Publication number 20060131696
- Publication date Jun 22, 2006
- Kabushiki Kaisha Toshiba
- Tsunetoshi Arikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Element formation substrate, method of manufacturing the same, and...
- Publication number 20040150044
- Publication date Aug 5, 2004
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer treatment method, semiconductor wafer inspectio...
- Publication number 20040137752
- Publication date Jul 15, 2004
- Junji Sugamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer with ID mark, equipment for and method of manuf...
- Publication number 20030003608
- Publication date Jan 2, 2003
- Tsunetoshi Arikado
- H01 - BASIC ELECTRIC ELEMENTS

Katsujiro Tanzawa

Person

Patents Grantslast 30 patents

Semiconductor wafer with ID mark, equipment for and method of manuf...

Method of inspecting semiconductor wafer

Element formation substrate, method of manufacturing the same, and...

Semiconductor wafer treatment method, semiconductor wafer inspectio...

Element formation substrate for forming semiconductor device

Semiconductor wafer with ID mark, equipment for and method of manuf...

Process of making a semiconductor device using a silicon-on-insulat...

Dielectrically isolated high and low voltage substrate regions

Dielectrically isolated substrate with isolated high and low breakd...

Dielectrically isolated substrate and semiconductor device using th...

Dielectrically isolated semiconductor substrate

Patents Applicationslast 30 patents

Element formation substrate, method of manufacturing the same, and...

Method of inspecting semiconductor wafer

Semiconductor wafer with ID mark, equipment for and method of manuf...

Element formation substrate, method of manufacturing the same, and...

Semiconductor wafer treatment method, semiconductor wafer inspectio...

Semiconductor wafer with ID mark, equipment for and method of manuf...