Katsumasa Hayashi

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Yokkaichi-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor memory device
- Patent number 8,835,241
- Issue date Sep 16, 2014
- Kabushiki Kaisha Toshiba
- Yutaka Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and storage layer semiconductor memory device
- Patent number 8,389,970
- Issue date Mar 5, 2013
- Kabushiki Kaisha Toshiba
- Yutaka Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,429,762
- Issue date Sep 30, 2008
- Kabushiki Kaisha Toshiba
- Katsumasa Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a shallow trench isolation struc...
- Patent number 7,078,774
- Issue date Jul 18, 2006
- Kabushiki Kaisha Toshiba
- Toshiyuki Kondo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130137237
- Publication date May 30, 2013
- KABUSHIKI KAISHA TOSHIBA
- Yutaka ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110068318
- Publication date Mar 24, 2011
- Yutaka ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20050180198
- Publication date Aug 18, 2005
- Kabushiki Kaisha Toshiba
- Katsumasa Hayashi
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor memory device having a shallow trench isolation struc...
- Publication number 20050161719
- Publication date Jul 28, 2005
- Toshiyuki Kondo
- H01 - BASIC ELECTRIC ELEMENTS