Katsuo Yamada

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Multiple liner interconnects for three dimensional memory devices a...
- Patent number 10,115,459
- Issue date Oct 30, 2018
- SanDisk Technologies LLC
- Katsuo Yamada
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Buried etch stop layer for damascene bit line formation
- Patent number 9,847,249
- Issue date Dec 19, 2017
- SanDisk Technologies LLC
- Yuji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double trench isolation
- Patent number 9,799,527
- Issue date Oct 24, 2017
- SanDisk Technologies LLC
- Katsuo Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal line with increased inter-metal breakdown voltage
- Patent number 9,607,997
- Issue date Mar 28, 2017
- SanDisk Technologies Inc.
- Katsuo Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact hole collimation using etch-resistant walls
- Patent number 9,466,523
- Issue date Oct 11, 2016
- SanDisk Technologies LLC
- Tomoyasu Kakegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal indentation to increase inter-metal breakdown voltage
- Patent number 9,391,081
- Issue date Jul 12, 2016
- SanDisk Technologies LLC
- Kiyokazu Shishido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layer stack for bit line air gap formation
- Patent number 9,177,853
- Issue date Nov 3, 2015
- SanDisk Technologies Inc.
- Takuya Futase
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Metal Line with Increased Inter-Metal Breakdown Voltage
- Publication number 20170069638
- Publication date Mar 9, 2017
- SANDISK TECHNOLOGIES INC.
- Katsuo Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Lines with Protective Sidewalls
- Publication number 20160204059
- Publication date Jul 14, 2016
- SANDISK TECHNOLOGIES INC.
- Noritaka Fukuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Etch Stop Layer for Damascene Bit Line Formation
- Publication number 20160126179
- Publication date May 5, 2016
- SANDISK TECHNOLOGIES INC.
- Yuji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double Trench Isolation
- Publication number 20160111493
- Publication date Apr 21, 2016
- SANDISK TECHNOLOGIES INC.
- Katsuo Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Hole Collimation Using Etch-Resistant Walls
- Publication number 20160035738
- Publication date Feb 4, 2016
- SANDISK TECHNOLOGIES INC.
- Tomoyasu Kakegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYER STACK FOR BIT LINE AIR GAP FORMATION
- Publication number 20150332953
- Publication date Nov 19, 2015
- SANDISK TECHNOLOGIES INC.
- Takuya Futase
- H01 - BASIC ELECTRIC ELEMENTS

Katsuo Yamada

Person

Patents Grantslast 30 patents

Multiple liner interconnects for three dimensional memory devices a...

Buried etch stop layer for damascene bit line formation

Double trench isolation

Metal line with increased inter-metal breakdown voltage

Contact hole collimation using etch-resistant walls

Metal indentation to increase inter-metal breakdown voltage

Barrier layer stack for bit line air gap formation

Patents Applicationslast 30 patents

Metal Line with Increased Inter-Metal Breakdown Voltage

Conductive Lines with Protective Sidewalls

Buried Etch Stop Layer for Damascene Bit Line Formation

Double Trench Isolation

Contact Hole Collimation Using Etch-Resistant Walls

BARRIER LAYER STACK FOR BIT LINE AIR GAP FORMATION