Katsushi Boku

Person

Tsuchiura, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating an open can-type stacked capacitor on an une...
- Patent number 6,580,112
- Issue date Jun 17, 2003
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an open can-type stacked capacitor on an une...
- Patent number 6,291,293
- Issue date Sep 18, 2001
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication an open can-type stacked capacitor on local...
- Patent number 6,204,118
- Issue date Mar 20, 2001
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM COB bit line and moat arrangement
- Patent number 5,734,184
- Issue date Mar 31, 1998
- Texas Instruments Incorporated
- Katsuyoshi Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall formation process for a top lead fuse
- Patent number 5,521,116
- Issue date May 28, 1996
- Texas Instruments Incorporated
- Katsushi Boku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,470,778
- Issue date Nov 28, 1995
- Texas Instruments Incorporated
- Toshiyuki Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,317,177
- Issue date May 31, 1994
- Texas Instruments Incorporated
- Toshiyuki Nagata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for fabricating an open can-type stacked capacitor on an une...
- Publication number 20010031530
- Publication date Oct 18, 2001
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS

Katsushi Boku

Person

Patents Grantslast 30 patents

Method for fabricating an open can-type stacked capacitor on an une...

Method for fabricating an open can-type stacked capacitor on an une...

Method for fabrication an open can-type stacked capacitor on local...

DRAM COB bit line and moat arrangement

Sidewall formation process for a top lead fuse

Method of manufacturing a semiconductor device

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

Method for fabricating an open can-type stacked capacitor on an une...