Katsushi Hashio

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Indium phosphide single-crystal body and indium phosphide single-cr...
- Patent number 12,091,773
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Takuya Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide single crystal and indium phosphide single crystal...
- Patent number 11,926,923
- Issue date Mar 12, 2024
- Sumitomo Electric Industries, Ltd.
- Katsushi Hashio
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium arsenide single crystal substrate
- Patent number 11,319,646
- Issue date May 3, 2022
- Sumitomo Electric Industries, Ltd.
- Hiroshi Fukunaga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide single-crystal body and indium phosphide single-cr...
- Patent number 11,313,050
- Issue date Apr 26, 2022
- Sumitomo Electric Industries, Ltd.
- Takuya Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-insulating gallium arsenide crystal substrate
- Patent number 11,024,705
- Issue date Jun 1, 2021
- Sumitomo Electric Industries, Ltd.
- Shinya Kawamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating compound semiconductor substrate and semi-insulatin...
- Patent number 10,971,374
- Issue date Apr 6, 2021
- Sumitomo Electric Industries, Ltd.
- Katsushi Hashio
- G01 - MEASURING TESTING
Information Patent Grant
Large size semiconductor crystal with low dislocation density
- Patent number 6,866,714
- Issue date Mar 15, 2005
- Sumitomo Electric Industries, Ltd.
- Tomohiro Kawase
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a semiconductor crystal
- Patent number 6,780,244
- Issue date Aug 24, 2004
- Sumitomo Electric Industries, Ltd.
- Tomohiro Kawase
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor crystal, and method and apparatus of production thereof
- Patent number 6,572,700
- Issue date Jun 3, 2003
- Sumitomo Electric Industries, Ltd.
- Tomohiro Kawase
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor crystal, and method and apparatus of production thereof
- Patent number 6,254,677
- Issue date Jul 3, 2001
- Sumitomo Electric Industries, Ltd.
- Katsushi Hashio
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for the growth of a single crystal
- Patent number 5,951,758
- Issue date Sep 14, 1999
- Sumitomo Electric Industries, Ltd.
- Katsushi Hashio
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing a single crystal
- Patent number 5,733,371
- Issue date Mar 31, 1998
- Sumitomo Electric Industries, Ltd.
- Katsushi Hashio
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
INDIUM PHOSPHIDE SINGLE-CRYSTAL BODY AND INDIUM PHOSPHIDE SINGLE-CR...
- Publication number 20220213618
- Publication date Jul 7, 2022
- Sumitomo Electric Industries, Ltd.
- Takuya Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20210310155
- Publication date Oct 7, 2021
- Sumitomo Electric Industries, Ltd.
- Hiroshi FUKUNAGA
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE SINGLE CRYSTAL AND INDIUM PHOSPHIDE SINGLE CRYSTAL...
- Publication number 20210040644
- Publication date Feb 11, 2021
- Sumitomo Electric Industries, Ltd.
- Katsushi HASHIO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMI-INSULATING GALLIUM ARSENIDE CRYSTAL SUBSTRATE
- Publication number 20200381509
- Publication date Dec 3, 2020
- Sumitomo Electric Industries, Ltd.
- Shinya KAWAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM PHOSPHIDE SINGLE-CRYSTAL BODY AND INDIUM PHOSPHIDE SINGLE-CR...
- Publication number 20200017992
- Publication date Jan 16, 2020
- Sumitomo Electric Industries, Ltd.
- Takuya YANAGISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMI-INSULATING COMPOUND SEMICONDUCTOR SUBSTRATE AND SEMI-INSULATIN...
- Publication number 20190371620
- Publication date Dec 5, 2019
- Sumitomo Electric Industries, Ltd.
- Katsushi HASHIO
- G01 - MEASURING TESTING
Information Patent Application
Large size semiconductor crystal with low dislocation density
- Publication number 20030200913
- Publication date Oct 30, 2003
- Sumitomo Electric Industries, Ltd.
- Tomohiro Kawase
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing a semiconductor crystal
- Publication number 20030145782
- Publication date Aug 7, 2003
- Sumitomo Electric Industries, Ltd.
- Tomohiro Kawase
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor crystal, and method and apparatus of production thereof
- Publication number 20010008115
- Publication date Jul 19, 2001
- Tomohiro Kawase
- C30 - CRYSTAL GROWTH

Katsushi Hashio

Person

Patents Grantslast 30 patents

Indium phosphide single-crystal body and indium phosphide single-cr...

Indium phosphide single crystal and indium phosphide single crystal...

Gallium arsenide single crystal substrate

Indium phosphide single-crystal body and indium phosphide single-cr...

Semi-insulating gallium arsenide crystal substrate

Semi-insulating compound semiconductor substrate and semi-insulatin...

Large size semiconductor crystal with low dislocation density

Method for producing a semiconductor crystal

Semiconductor crystal, and method and apparatus of production thereof

Semiconductor crystal, and method and apparatus of production thereof

Method and apparatus for the growth of a single crystal

Apparatus for growing a single crystal

Patents Applicationslast 30 patents

INDIUM PHOSPHIDE SINGLE-CRYSTAL BODY AND INDIUM PHOSPHIDE SINGLE-CR...

GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE

INDIUM PHOSPHIDE SINGLE CRYSTAL AND INDIUM PHOSPHIDE SINGLE CRYSTAL...

SEMI-INSULATING GALLIUM ARSENIDE CRYSTAL SUBSTRATE

INDIUM PHOSPHIDE SINGLE-CRYSTAL BODY AND INDIUM PHOSPHIDE SINGLE-CR...

SEMI-INSULATING COMPOUND SEMICONDUCTOR SUBSTRATE AND SEMI-INSULATIN...

Large size semiconductor crystal with low dislocation density

Method for producing a semiconductor crystal

Semiconductor crystal, and method and apparatus of production thereof