Katsuya Miura

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing magnetic tunnel junction and magnetic tunne...
- Patent number 11,678,583
- Issue date Jun 13, 2023
- HITACHI HIGH-TECH CORPORATION
- Yu Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing magnetic tunnel junction and magnetic tunne...
- Patent number 11,276,816
- Issue date Mar 15, 2022
- HITACHI HIGH-TECH CORPORATION
- Yu Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction element, magnetic memory using the same, a...
- Patent number 11,164,906
- Issue date Nov 2, 2021
- HITACHI HIGH-TECH CORPORATION
- Katsuya Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device, magnetoresistive random access mem...
- Patent number 11,165,015
- Issue date Nov 2, 2021
- HITACHI HIGH-TECH CORPORATION
- Katsuya Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature sensor element
- Patent number 11,131,586
- Issue date Sep 28, 2021
- KOA Corporation
- Katsuya Miura
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,804,457
- Issue date Oct 13, 2020
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,651,369
- Issue date May 12, 2020
- Tohoku University
- Hideo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platinum temperature sensor element
- Patent number 10,488,270
- Issue date Nov 26, 2019
- Koa Corporation
- Ryusuke Suzuki
- G01 - MEASURING TESTING
Information Patent Grant
Spin wave device and logic circuit using spin wave device
- Patent number 9,602,103
- Issue date Mar 21, 2017
- Hitachi, Ltd.
- Katsuya Miura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,564,152
- Issue date Feb 7, 2017
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,450,177
- Issue date Sep 20, 2016
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magnetoresistive effect element and random access memory usi...
- Patent number 9,153,306
- Issue date Oct 6, 2015
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,135,973
- Issue date Sep 15, 2015
- TOHOKU UNIVERSITY
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junctions with perpendicular magnetization and magn...
- Patent number 9,070,457
- Issue date Jun 30, 2015
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 8,957,486
- Issue date Feb 17, 2015
- Hitachi, Ltd.
- Kenchi Ito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 8,917,541
- Issue date Dec 23, 2014
- Hitachi, Ltd.
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cell and magnetic random access memory
- Patent number 8,837,209
- Issue date Sep 16, 2014
- Hitachi, Ltd.
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Unidirectional-current magnetization-reversal magnetoresistance ele...
- Patent number 7,872,906
- Issue date Jan 18, 2011
- Hitachi, Ltd.
- Katsuya Miura
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque magnetic memory and offset magnetic field correcting me...
- Patent number 7,755,932
- Issue date Jul 13, 2010
- Hitachi, Ltd.
- Kenchi Ito
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element utilizing magnetization switching caused by spin acc...
- Patent number 7,613,036
- Issue date Nov 3, 2009
- Hitachi, Ltd.
- Katsuya Miura
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SENSOR ELEMENT
- Publication number 20240247960
- Publication date Jul 25, 2024
- KOA Corporation
- Satoshi KANEGAE
- G01 - MEASURING TESTING
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240196538
- Publication date Jun 13, 2024
- TDK Corporation
- Akihiro MASUDA
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
FLOW SENSOR ELEMENT
- Publication number 20230296418
- Publication date Sep 21, 2023
- KOA Corporation
- Masahiro SHIMODAIRA
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNE...
- Publication number 20220158088
- Publication date May 19, 2022
- HITACHI HIGH-TECH CORPORATION
- Yu Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC MEMORY USING THE SAME, A...
- Publication number 20200027920
- Publication date Jan 23, 2020
- Hitachi High-Technologies Corporation
- Katsuya MIURA
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNE...
- Publication number 20200006644
- Publication date Jan 2, 2020
- Hitachi High-Technologies Corporation
- Yu ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE, MAGNETORESISTIVE RANDOM ACCESS MEM...
- Publication number 20190051819
- Publication date Feb 14, 2019
- Hitachi High-Technologies Corporation
- Katsuya MIURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Temperature Sensor Element
- Publication number 20180335348
- Publication date Nov 22, 2018
- KOA CORPORATION
- Katsuya MIURA
- G01 - MEASURING TESTING
Information Patent Application
PLATINUM TEMPERATURE SENSOR ELEMENT
- Publication number 20180106687
- Publication date Apr 19, 2018
- KOA Corporation
- Ryusuke SUZUKI
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20170110654
- Publication date Apr 20, 2017
- TOHOKU UNIVERSITY
- Hideo OHNO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20170025600
- Publication date Jan 26, 2017
- TOHOKU UNIVERSITY
- Hideo OHNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC SENSOR ELEMENT
- Publication number 20160202330
- Publication date Jul 14, 2016
- Hitachi, Ltd
- Hiroyuki YAMAMOTO
- G01 - MEASURING TESTING
Information Patent Application
SPIN WAVE DEVICE AND LOGIC CIRCUIT USING SPIN WAVE DEVICE
- Publication number 20160105176
- Publication date Apr 14, 2016
- Hitachi, Ltd
- Katsuya MIURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USI...
- Publication number 20140340961
- Publication date Nov 20, 2014
- Hitachi, Ltd
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistance Effect Element and Magnetic Memory
- Publication number 20140205862
- Publication date Jul 24, 2014
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20130141966
- Publication date Jun 6, 2013
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20130094284
- Publication date Apr 18, 2013
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20130058156
- Publication date Mar 7, 2013
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Element and Magnetic Memory
- Publication number 20120320666
- Publication date Dec 20, 2012
- TOHOKU UNIVERSITY
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS WITH PERPENDICULAR MAGNETIZATION AND MAGN...
- Publication number 20120300543
- Publication date Nov 29, 2012
- TOHOKU UNIVERSITY
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20120012955
- Publication date Jan 19, 2012
- Hitachi, Ltd
- Kenchi Ito
- G11 - INFORMATION STORAGE
Information Patent Application
Unidirectional-Current Magnetization-Reversal Magnetoresistance Ele...
- Publication number 20090180312
- Publication date Jul 16, 2009
- Katsuya MIURA
- G11 - INFORMATION STORAGE
Information Patent Application
Spin Torque Magnetic Memory and Offset Magnetic Field Correcting Me...
- Publication number 20090161414
- Publication date Jun 25, 2009
- Kenchi ITO
- G11 - INFORMATION STORAGE
Information Patent Application
Memory element utilizing magnetization switching caused by spin acc...
- Publication number 20080310216
- Publication date Dec 18, 2008
- Hitachi, Ltd.
- Katsuya Miura
- G11 - INFORMATION STORAGE

Katsuya Miura

Person

Patents Grantslast 30 patents

Method of manufacturing magnetic tunnel junction and magnetic tunne...

Method of manufacturing magnetic tunnel junction and magnetic tunne...

Magnetic tunnel junction element, magnetic memory using the same, a...

Magnetic tunnel junction device, magnetoresistive random access mem...

Temperature sensor element

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Platinum temperature sensor element

Spin wave device and logic circuit using spin wave device

Magnetoresistance effect element and magnetic memory

Magnetoresistive element and magnetic memory

Tunnel magnetoresistive effect element and random access memory usi...

Magnetoresistance effect element and magnetic memory

Magnetic tunnel junctions with perpendicular magnetization and magn...

Magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetic memory cell and magnetic random access memory

Unidirectional-current magnetization-reversal magnetoresistance ele...

Spin torque magnetic memory and offset magnetic field correcting me...

Memory element utilizing magnetization switching caused by spin acc...

Patents Applicationslast 30 patents

SENSOR ELEMENT

ELECTRONIC DEVICE

FLOW SENSOR ELEMENT

METHOD OF MANUFACTURING MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNE...

MAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC MEMORY USING THE SAME, A...

METHOD OF MANUFACTURING MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNE...

MAGNETIC TUNNEL JUNCTION DEVICE, MAGNETORESISTIVE RANDOM ACCESS MEM...

Temperature Sensor Element

PLATINUM TEMPERATURE SENSOR ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC SENSOR ELEMENT

SPIN WAVE DEVICE AND LOGIC CIRCUIT USING SPIN WAVE DEVICE

TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USI...

Magnetoresistance Effect Element and Magnetic Memory

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY

Magnetoresistive Element and Magnetic Memory

MAGNETIC TUNNEL JUNCTIONS WITH PERPENDICULAR MAGNETIZATION AND MAGN...

MAGNETIC MEMORY

Unidirectional-Current Magnetization-Reversal Magnetoresistance Ele...

Spin Torque Magnetic Memory and Offset Magnetic Field Correcting Me...

Memory element utilizing magnetization switching caused by spin acc...