Katsuyuki NAKADA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Tunnel barrier layer, magnetoresistance effect element, and method...
- Patent number 12,063,873
- Issue date Aug 13, 2024
- TDK Corporation
- Shinto Ichikawa
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,035,635
- Issue date Jul 9, 2024
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element containing Heusler alloy with addi...
- Patent number 11,967,348
- Issue date Apr 23, 2024
- TDK Corporation
- Katsuyuki Nakada
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,944,018
- Issue date Mar 26, 2024
- TDK Corporation
- Kazuumi Inubushi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,871,681
- Issue date Jan 9, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Film deposition system, factory system, and method of depositing fi...
- Patent number 11,840,757
- Issue date Dec 12, 2023
- TDK Corporation
- Tsuyoshi Suzuki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,769,523
- Issue date Sep 26, 2023
- TDK Corporation
- Kazuumi Inubushi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element including a Heusler alloy layer wit...
- Patent number 11,730,063
- Issue date Aug 15, 2023
- TDK Corporation
- Kazuumi Inubushi
Information Patent Grant
Magnetoresistive effect element
- Patent number 11,728,082
- Issue date Aug 15, 2023
- TDK Corporation
- Tsuyoshi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and method for manufacturing the same
- Patent number 11,696,513
- Issue date Jul 4, 2023
- TDK Corporation
- Katsuyuki Nakada
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,694,714
- Issue date Jul 4, 2023
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element including a crystallized co heusle...
- Patent number 11,621,392
- Issue date Apr 4, 2023
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,600,771
- Issue date Mar 7, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel barrier layer, magnetoresistance effect element, method for...
- Patent number 11,594,674
- Issue date Feb 28, 2023
- TDK Corporation
- Shinto Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element containing two non-magnetic layers...
- Patent number 11,585,873
- Issue date Feb 21, 2023
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,581,365
- Issue date Feb 14, 2023
- TDK Corporation
- Katsuyuki Nakada
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element including at least one Heusler all...
- Patent number 11,525,873
- Issue date Dec 13, 2022
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element including a Heusler alloy ferromag...
- Patent number 11,450,342
- Issue date Sep 20, 2022
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked structure, magnetoresistive effect element, magnetic head,...
- Patent number 11,422,211
- Issue date Aug 23, 2022
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,410,689
- Issue date Aug 9, 2022
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,367,834
- Issue date Jun 21, 2022
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,362,270
- Issue date Jun 14, 2022
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and heusler alloy
- Patent number 11,335,365
- Issue date May 17, 2022
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,309,115
- Issue date Apr 19, 2022
- TDK Corporation
- Katsuyuki Nakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element including a crystallized Heusler a...
- Patent number 11,158,785
- Issue date Oct 26, 2021
- TDK Corporation
- Shinto Ichikawa
- G01 - MEASURING TESTING
Information Patent Grant
Spin-orbit-torque magnetization rotating element, spin-orbit-torque...
- Patent number 11,127,894
- Issue date Sep 21, 2021
- TDK Corporation
- Katsuyuki Nakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,069,852
- Issue date Jul 20, 2021
- TDK Corporation
- Shinto Ichikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,056,639
- Issue date Jul 6, 2021
- TDK Corporation
- Katsuyuki Nakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,056,642
- Issue date Jul 6, 2021
- TDK Corporation
- Tomoyuki Sasaki
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistive effect element
- Patent number 11,005,035
- Issue date May 11, 2021
- TDK Corporation
- Tsuyoshi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPIN INDUCTOR
- Publication number 20240355521
- Publication date Oct 24, 2024
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN INDUCTOR
- Publication number 20240347252
- Publication date Oct 17, 2024
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20240334839
- Publication date Oct 3, 2024
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE CAPACITOR AND INTEGRATED CIRCUIT
- Publication number 20240290822
- Publication date Aug 29, 2024
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...
- Publication number 20240112695
- Publication date Apr 4, 2024
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE ELEMENT
- Publication number 20240099152
- Publication date Mar 21, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20240062777
- Publication date Feb 22, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM DEPOSITION SYSTEM, FACTORY SYSTEM, AND METHOD OF DEPOSITING FI...
- Publication number 20230416905
- Publication date Dec 28, 2023
- TDK Corporation
- Tsuyoshi SUZUKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FILM DEPOSITION SYSTEM, FACTORY SYSTEM, AND METHOD OF DEPOSITING FI...
- Publication number 20230392253
- Publication date Dec 7, 2023
- TDK Corporation
- Tsuyoshi SUZUKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20230337549
- Publication date Oct 19, 2023
- TDK Corporation
- Kazuumi INUBUSHI
Information Patent Application
MAGNETO RESISTIVE ELEMENT
- Publication number 20230309415
- Publication date Sep 28, 2023
- TDK Corporation
- Katsuyuki NAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230292625
- Publication date Sep 14, 2023
- TDK Corporation
- Katsuyuki NAKADA
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230225222
- Publication date Jul 13, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230210016
- Publication date Jun 29, 2023
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20230157183
- Publication date May 18, 2023
- TDK Corporation
- Shinto ICHIKAWA
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230144429
- Publication date May 11, 2023
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230025589
- Publication date Jan 26, 2023
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS...
- Publication number 20230009284
- Publication date Jan 12, 2023
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20220328067
- Publication date Oct 13, 2022
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20220278271
- Publication date Sep 1, 2022
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20220278272
- Publication date Sep 1, 2022
- TDK Corporation
- Shinto ICHIKAWA
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20220238136
- Publication date Jul 28, 2022
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
FILM DEPOSITION SYSTEM, FACTORY SYSTEM, AND METHOD OF DEPOSITING FI...
- Publication number 20220010423
- Publication date Jan 13, 2022
- TDK Corporation
- Tsuyoshi SUZUKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20220013140
- Publication date Jan 13, 2022
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20220006007
- Publication date Jan 6, 2022
- TDK Corporation
- Shinto ICHIKAWA
- G01 - MEASURING TESTING
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETIZATION ROTATING ELEMENT, SPIN-ORBIT-TORQUE...
- Publication number 20210384414
- Publication date Dec 9, 2021
- TDK Corporation
- Katsuyuki NAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20210328136
- Publication date Oct 21, 2021
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20210304940
- Publication date Sep 30, 2021
- TDK Corporation
- Tsuyoshi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20210286028
- Publication date Sep 16, 2021
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND CRYSTALLIZATION METHOD OF FERRO...
- Publication number 20210265562
- Publication date Aug 26, 2021
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS

Katsuyuki NAKADA

Person

Patents Grantslast 30 patents

Tunnel barrier layer, magnetoresistance effect element, and method...

Magnetoresistance effect element

Magnetoresistance effect element containing Heusler alloy with addi...

Magnetoresistance effect element

Magnetoresistance effect element

Film deposition system, factory system, and method of depositing fi...

Magnetoresistance effect element and Heusler alloy

Magnetoresistive effect element including a Heusler alloy layer wit...

Magnetoresistive effect element

Magnetoresistance effect element and method for manufacturing the same

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element including a crystallized co heusle...

Magnetoresistance effect element

Tunnel barrier layer, magnetoresistance effect element, method for...

Magnetoresistive effect element containing two non-magnetic layers...

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element including at least one Heusler all...

Magnetoresistance effect element including a Heusler alloy ferromag...

Stacked structure, magnetoresistive effect element, magnetic head,...

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element

Magnetoresistance effect element

Magnetoresistance effect element and heusler alloy

Magnetoresistance effect element

Magnetoresistance effect element including a crystallized Heusler a...

Spin-orbit-torque magnetization rotating element, spin-orbit-torque...

Magnetoresistance effect element

Magnetoresistance effect element

Magnetoresistance effect element

Magnetoresistive effect element

Patents Applicationslast 30 patents

SPIN INDUCTOR

SPIN INDUCTOR

MAGNETORESISTANCE EFFECT ELEMENT

VARIABLE CAPACITOR AND INTEGRATED CIRCUIT

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...

MAGNETO RESISTIVE ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

FILM DEPOSITION SYSTEM, FACTORY SYSTEM, AND METHOD OF DEPOSITING FI...

FILM DEPOSITION SYSTEM, FACTORY SYSTEM, AND METHOD OF DEPOSITING FI...

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETO RESISTIVE ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS...

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

FILM DEPOSITION SYSTEM, FACTORY SYSTEM, AND METHOD OF DEPOSITING FI...

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

SPIN-ORBIT-TORQUE MAGNETIZATION ROTATING ELEMENT, SPIN-ORBIT-TORQUE...

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT AND CRYSTALLIZATION METHOD OF FERRO...