Kaveh Shakeri

Person

Campbell, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 10,262,747
- Issue date Apr 16, 2019
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 10,204,691
- Issue date Feb 12, 2019
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 9,847,137
- Issue date Dec 19, 2017
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 9,431,124
- Issue date Aug 30, 2016
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
- Patent number 9,378,821
- Issue date Jun 28, 2016
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 8,988,938
- Issue date Mar 24, 2015
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cells and methods of making such cells
- Patent number 8,897,067
- Issue date Nov 25, 2014
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
nvSRAM with inverted recall
- Patent number 8,724,386
- Issue date May 13, 2014
- Cypress Semiconductor Corporation
- Kaveh Shakeri
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 8,675,405
- Issue date Mar 18, 2014
- Cypress Semiconductor Corp.
- Bogdan Georgescu
- G11 - INFORMATION STORAGE
Information Patent Grant
nvSRAM with inverted recall
- Patent number 8,467,243
- Issue date Jun 18, 2013
- Cypress Semiconductor Corporation
- Kaveh Shakeri
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory and method of operating the same
- Patent number 7,859,899
- Issue date Dec 28, 2010
- Cypress Semiconductor Corporation
- Kaveh Shakeri
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Method to Reduce Program Disturbs in Non-Volatile Memory Cells
- Publication number 20180068735
- Publication date Mar 8, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Application
Method to Reduce Program Disturbs in Non-Volatile Memory Cells
- Publication number 20170011807
- Publication date Jan 12, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Application
Method to Reduce Program Disturbs in Non-Volatile Memory Cells
- Publication number 20150294731
- Publication date Oct 15, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Application
Method to Reduce Program Disturbs in Non-Volatile Memory Cells
- Publication number 20140301139
- Publication date Oct 9, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY CELLS AND METHODS OF MAKING SUCH CELLS
- Publication number 20140264552
- Publication date Sep 18, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Venkatraman Prabhakar
- G11 - INFORMATION STORAGE

Kaveh Shakeri

Person

Patents Grantslast 30 patents

Method to reduce program disturbs in non-volatile memory cells

Method to reduce program disturbs in non-volatile memory cells

Method to reduce program disturbs in non-volatile memory cells

Method to reduce program disturbs in non-volatile memory cells

Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells

Method to reduce program disturbs in non-volatile memory cells

Nonvolatile memory cells and methods of making such cells

nvSRAM with inverted recall

Method to reduce program disturbs in non-volatile memory cells

nvSRAM with inverted recall

Non-volatile memory and method of operating the same

Patents Applicationslast 30 patents

Method to Reduce Program Disturbs in Non-Volatile Memory Cells

Method to Reduce Program Disturbs in Non-Volatile Memory Cells

Method to Reduce Program Disturbs in Non-Volatile Memory Cells

Method to Reduce Program Disturbs in Non-Volatile Memory Cells

NONVOLATILE MEMORY CELLS AND METHODS OF MAKING SUCH CELLS