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last 30 patents
Information
Patent Grant
SiC single crystal production method and production apparatus
Patent number
10,968,535
Issue date
Apr 6, 2021
Toyota Jidosha Kabushiki Kaisha
Masayoshi Doi
C30 - CRYSTAL GROWTH
Information
Patent Grant
SiC single crystal production method and production apparatus
Patent number
10,640,885
Issue date
May 5, 2020
Toyota Jidosha Kabushiki Kaisha
Masayoshi Doi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing SiC single crystal
Patent number
10,145,025
Issue date
Dec 4, 2018
Toyota Jidosha Kabushiki Kaisha
Kazuaki Seki
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing SiC single crystal
Patent number
10,119,199
Issue date
Nov 6, 2018
Toyota Jidosha Kabushiki Kaisha
Kazuaki Seki
C30 - CRYSTAL GROWTH
Information
Patent Grant
SiC single crystal production method and production apparatus
Patent number
10,081,883
Issue date
Sep 25, 2018
Toyota Jidosha Kabushiki Kaisha
Motohisa Kado
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing silicon carbide single-crystal ingot and silic...
Patent number
10,066,316
Issue date
Sep 4, 2018
Showa Denko K.K.
Komomo Tani
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing SiC single crystal
Patent number
9,822,468
Issue date
Nov 21, 2017
Toyota Jidosha Kabushiki Kaisha
Hironori Daikoku
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
Publication number
20180312996
Publication date
Nov 1, 2018
Toyota Jidosha Kabushiki Kaisha
Masayoshi DOI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
Publication number
20180112328
Publication date
Apr 26, 2018
TOYOTA JIDOSHA KABUSHIKI KAISHA
Kazuaki SEKI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
Publication number
20180112329
Publication date
Apr 26, 2018
TOYOTA JIDOSHA KABUSHIKI KAISHA
Kazuaki SEKI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING SILICON CARBIDE SINGLE-CRYSTAL INGOT AND SILIC...
Publication number
20180066380
Publication date
Mar 8, 2018
NIPPON STEEL & SUMITOMO METAL CORPORATION
Komomo TANI
C30 - CRYSTAL GROWTH
Information
Patent Application
SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
Publication number
20170327968
Publication date
Nov 16, 2017
Toyota Jidosha Kabushiki Kaisha
Hironori DAIKOKU
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...
Publication number
20170298533
Publication date
Oct 19, 2017
NIPPON STEEL & SUMITOMO METAL CORPORATION
Kazuhiko KUSUNOKI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL
Publication number
20170283982
Publication date
Oct 5, 2017
NIPPON STEEL & SUMITOMO METAL CORPORATION
Kazuhiko KUSUNOKI
C30 - CRYSTAL GROWTH
Information
Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
Publication number
20170198408
Publication date
Jul 13, 2017
Toyota Jidosha Kabushiki Kaisha
Motohisa KADO
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
Publication number
20170067183
Publication date
Mar 9, 2017
NIPPON STEEL & SUMITOMO METAL CORPORATION
Kazuaki SEKI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
Publication number
20160340794
Publication date
Nov 24, 2016
Toyota Jidosha Kabushiki Kaisha
Hironori DAIKOKU
C30 - CRYSTAL GROWTH