Kazuhide Kumakura

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,218,272
- Issue date Feb 4, 2025
- Nippon Telegraph and Telephone Corporation
- Kazuaki Ebata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure and method of preparing the same
- Patent number 9,219,111
- Issue date Dec 22, 2015
- Nippon Telegraph and Telephone Corporation
- Yasuyuki Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
P-type nitride semiconductor structure and bipolar transistor
- Patent number 7,804,106
- Issue date Sep 28, 2010
- Nippon Telegraph and Telephone Corporation
- Toshiki Makimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for nitride semiconductor growth
- Patent number 7,244,520
- Issue date Jul 17, 2007
- Nippon Telegraph and Telephone Corporation
- Kazuhide Kumakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor stack and its semiconductor device
- Patent number 6,667,498
- Issue date Dec 23, 2003
- Nippon Telegraph and Telephone Corporation
- Toshiki Makimoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Light-Emitting Element and Method for Manufacturing the Same
- Publication number 20230261138
- Publication date Aug 17, 2023
- Nippon Telegraph and Telephone Corporation
- Kazuyuki Hirama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacturing the Same
- Publication number 20230101293
- Publication date Mar 30, 2023
- Nippon Telegraph and Telephone Corporation
- Masanobu Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20220059723
- Publication date Feb 24, 2022
- Nippon Telegraph and Telephone Corporation
- Kazuaki Ebata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layered Material Laminate Structure and Method for Producing Same
- Publication number 20210272794
- Publication date Sep 2, 2021
- Nippon Telegraph and Telephone Corporation
- Koji Onomitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING SAME
- Publication number 20140145147
- Publication date May 29, 2014
- Yasuyuki Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate for nitride semiconductor growth
- Publication number 20060051554
- Publication date Mar 9, 2006
- Kazuhide Kumakura
- C30 - CRYSTAL GROWTH
Information Patent Application
P-type nitride semiconductor structure and bipolar transistor
- Publication number 20050224831
- Publication date Oct 13, 2005
- Toshiki Makimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor stack and its semiconductor device
- Publication number 20020195619
- Publication date Dec 26, 2002
- Nippon Telegraph and Telephone Corporation
- Toshiki Makimoto
- H01 - BASIC ELECTRIC ELEMENTS

Kazuhide Kumakura

Person

Patents Grantslast 30 patents

Semiconductor device

Nitride semiconductor structure and method of preparing the same

P-type nitride semiconductor structure and bipolar transistor

Substrate for nitride semiconductor growth

Nitride semiconductor stack and its semiconductor device

Patents Applicationslast 30 patents

Light-Emitting Element and Method for Manufacturing the Same

Semiconductor Device and Method for Manufacturing the Same

Semiconductor Device

Layered Material Laminate Structure and Method for Producing Same

NITRIDE SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING SAME

Substrate for nitride semiconductor growth

P-type nitride semiconductor structure and bipolar transistor

Nitride semiconductor stack and its semiconductor device