Kazuhiko Kashima

Person

Shinagawa-ku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Calibration curve formation method, impurity concentration measurem...
- Patent number 9,541,452
- Issue date Jan 10, 2017
- GlobalWafers Japan Co., Ltd.
- Satoko Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer and method for heat-treating silicon wafer
- Patent number 8,999,864
- Issue date Apr 7, 2015
- Global Wafers Japan Co., Ltd.
- Takeshi Senda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing single crystal silicon wafer from ingot gro...
- Patent number 8,476,149
- Issue date Jul 2, 2013
- Global Wafers Japan Co., Ltd.
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treating a silicon wafer
- Patent number 8,399,341
- Issue date Mar 19, 2013
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of heat treating silicon wafer
- Patent number 8,252,700
- Issue date Aug 28, 2012
- Covalent Materials Corporation
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for silicon wafer
- Patent number 7,977,219
- Issue date Jul 12, 2011
- Covalent Materials Corporation
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fiber Bragg grating element
- Patent number 7,835,604
- Issue date Nov 16, 2010
- The Furukawa Electric Co., Ltd.
- Yasuo Uemura
- G02 - OPTICS
Information Patent Grant
Semiconductor substrate comprising a support substrate which compri...
- Patent number 7,193,294
- Issue date Mar 20, 2007
- Toshiba Ceramics Co., Ltd.
- Reiko Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer fabricating method and silicon single...
- Patent number 7,048,796
- Issue date May 23, 2006
- Toshiba Ceramics Co., Ltd.
- Masayuki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer manufacturing method eliminating final mirror-polishi...
- Patent number 5,744,401
- Issue date Apr 28, 1998
- Toshiba Ceramics Co., Ltd.
- Hiroshi Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neutron transmutation doping of a silicon wafer
- Patent number 4,910,156
- Issue date Mar 20, 1990
- Toshiba Ceramics Co., Ltd.
- Shin'ichiro Takasu
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
CALIBRATION CURVE FORMATION METHOD, IMPURITY CONCENTRATION MEASUREM...
- Publication number 20150338276
- Publication date Nov 26, 2015
- GLOBALWAFERS JAPAN CO., LTD.
- Satoko NAKAGAWA
- G01 - MEASURING TESTING
Information Patent Application
SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURE THEREOF
- Publication number 20150017086
- Publication date Jan 15, 2015
- GlobalWafers Japan Co., Ltd.
- Yuta NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON WAFER
- Publication number 20130175726
- Publication date Jul 11, 2013
- GlobalWafers Japan Co., Ltd.
- Toshiro MINAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HEAT TREATING A SILICON WAFER
- Publication number 20120184091
- Publication date Jul 19, 2012
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER
- Publication number 20120139088
- Publication date Jun 7, 2012
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of heat treating silicon wafer
- Publication number 20100197146
- Publication date Aug 5, 2010
- COVALENT MATERIALS CORPORATION
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD FOR SILICON WAFER
- Publication number 20100055884
- Publication date Mar 4, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...
- Publication number 20100038757
- Publication date Feb 18, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
FIBER BRAGG GRATING ELEMENT
- Publication number 20090052828
- Publication date Feb 26, 2009
- The Furukawa Electric CO., LTD
- Yasuo Uemura
- G02 - OPTICS
Information Patent Application
SILICON MEMBER AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080277768
- Publication date Nov 13, 2008
- COVALENT MATERIALS CORPORATION
- Masataka MORIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIBER BRAGG GRATING AND MANUFACTURING METHOD THEREFOR
- Publication number 20080212925
- Publication date Sep 4, 2008
- THE FURUKAWA ELECTRIC CO., LTD.
- Yoshihiro ARASHITANI
- G02 - OPTICS
Information Patent Application
SILICON WAFER
- Publication number 20070240628
- Publication date Oct 18, 2007
- Toshiba Ceramics Co., Ltd
- Takashi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Application
ARSENIC DOPANTS FOR PULLING OF SILICON SINGLE CRYSTAL, PROCESS FOR...
- Publication number 20070227440
- Publication date Oct 4, 2007
- TOSHIBA CERAMICS CO., LTD.
- Kazuhiko Kashima
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing silicon wafer
- Publication number 20070068447
- Publication date Mar 29, 2007
- TOSHIBA CERAMICS CO., LTD.
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon member and method of manufacturing the same
- Publication number 20060170078
- Publication date Aug 3, 2006
- TOSHIBA CERAMICS CO., LTD.
- Masataka Moriya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A semiconductor substrate comprising a support substrate which comp...
- Publication number 20060118868
- Publication date Jun 8, 2006
- TOSHIBA CERAMICS CO., LTD.
- Reiko Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Arsenic dopants for pulling of silicon single crystal, process for...
- Publication number 20050215057
- Publication date Sep 29, 2005
- TOSHIBA CERAMICS CO., LTD.
- Kazuhiko Kashima
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer fabricating method and silicon single...
- Publication number 20050039671
- Publication date Feb 24, 2005
- TOSHIBA CERAMICS CO., LTD.
- Masayuki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer fabricating method and silicon single...
- Publication number 20030029375
- Publication date Feb 13, 2003
- TOSHIBA CERAMICS CO., LTD.
- Masayuki Watanabe
- C30 - CRYSTAL GROWTH

Kazuhiko Kashima

Person

Patents Grantslast 30 patents

Calibration curve formation method, impurity concentration measurem...

Silicon wafer and method for heat-treating silicon wafer

Method of manufacturing single crystal silicon wafer from ingot gro...

Method for heat treating a silicon wafer

Method of heat treating silicon wafer

Manufacturing method for silicon wafer

Fiber Bragg grating element

Semiconductor substrate comprising a support substrate which compri...

Silicon single crystal wafer fabricating method and silicon single...

Silicon wafer manufacturing method eliminating final mirror-polishi...

Neutron transmutation doping of a silicon wafer

Patents Applicationslast 30 patents

CALIBRATION CURVE FORMATION METHOD, IMPURITY CONCENTRATION MEASUREM...

SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURE THEREOF

METHOD FOR MANUFACTURING SILICON WAFER

METHOD FOR HEAT TREATING A SILICON WAFER

SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER

Method of heat treating silicon wafer

MANUFACTURING METHOD FOR SILICON WAFER

SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...

FIBER BRAGG GRATING ELEMENT

SILICON MEMBER AND METHOD OF MANUFACTURING THE SAME

FIBER BRAGG GRATING AND MANUFACTURING METHOD THEREFOR

SILICON WAFER

ARSENIC DOPANTS FOR PULLING OF SILICON SINGLE CRYSTAL, PROCESS FOR...

Method of manufacturing silicon wafer

Silicon member and method of manufacturing the same

A semiconductor substrate comprising a support substrate which comp...

Arsenic dopants for pulling of silicon single crystal, process for...

Silicon single crystal wafer fabricating method and silicon single...

Silicon single crystal wafer fabricating method and silicon single...