Kazuhiko Onda

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Matrix switch device high in isolation between terminals thereof, s...
- Patent number 6,661,252
- Issue date Dec 9, 2003
- NEC Compound Semiconductor Devices, Ltd.
- Nobuo Nagano
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Field effect transistor and method of fabricating the same
- Patent number 6,448,119
- Issue date Sep 10, 2002
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing thereof
- Patent number 6,391,696
- Issue date May 21, 2002
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device with a recess profile
- Patent number 6,262,444
- Issue date Jul 17, 2001
- NEC Corporation
- Yasuko Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 6,194,747
- Issue date Feb 27, 2001
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of fabricating the same
- Patent number 6,184,547
- Issue date Feb 6, 2001
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 6,144,049
- Issue date Nov 7, 2000
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron-gun evaporation system having evaporation-source stream re...
- Patent number 5,785,763
- Issue date Jul 28, 1998
- NEC Corporation
- Kazuhiko Onda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making a compound semiconductor field-effect transistor
- Patent number 5,770,489
- Issue date Jun 23, 1998
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction field effect transistor having a InAlAs Schottky bar...
- Patent number 5,767,539
- Issue date Jun 16, 1998
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with an improved interface betwee...
- Patent number 5,760,427
- Issue date Jun 2, 1998
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with an improved Schottky gate structure
- Patent number 5,635,735
- Issue date Jun 3, 1997
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor with improved iso...
- Patent number 5,597,743
- Issue date Jan 28, 1997
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a graded bandgap InGaAsP channel for...
- Patent number 5,596,211
- Issue date Jan 21, 1997
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having an improved transistor characteristic
- Patent number 5,466,955
- Issue date Nov 14, 1995
- NEC Corporation
- Kenichi Maruhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a multi-layer channel
- Patent number 5,453,631
- Issue date Sep 26, 1995
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional electron gas field effect transistor including an i...
- Patent number 5,373,168
- Issue date Dec 13, 1994
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quasi-one-dimensional channel field effect transistor having gate e...
- Patent number 5,119,151
- Issue date Jun 2, 1992
- NEC Corporation
- Kazuhiko Onda
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Matrix switch device high in isolation between terminals thereof, s...
- Publication number 20030016071
- Publication date Jan 23, 2003
- Nobuo Nagano
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Kazuhiko Onda

Person

Patents Grantslast 30 patents

Matrix switch device high in isolation between terminals thereof, s...

Field effect transistor and method of fabricating the same

Field effect transistor and method of manufacturing thereof

Field-effect semiconductor device with a recess profile

Field effect transistor

Field effect transistor and method of fabricating the same

Field effect transistor

Electron-gun evaporation system having evaporation-source stream re...

Method of making a compound semiconductor field-effect transistor

Heterojunction field effect transistor having a InAlAs Schottky bar...

High electron mobility transistor with an improved interface betwee...

Field effect transistor with an improved Schottky gate structure

Method of manufacturing a field effect transistor with improved iso...

Field effect transistor having a graded bandgap InGaAsP channel for...

Field effect transistor having an improved transistor characteristic

Field effect transistor having a multi-layer channel

Two-dimensional electron gas field effect transistor including an i...

Quasi-one-dimensional channel field effect transistor having gate e...

Patents Applicationslast 30 patents

Matrix switch device high in isolation between terminals thereof, s...