Kazuhiko Yoshida

Person

Chikuma-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing bonded SOI wafer and bonded SOI wafer
- Patent number 11,495,488
- Issue date Nov 8, 2022
- Shin-Etsu Handotai Co., Ltd.
- Toshikazu Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal oxide film formation method for silicon single crystal wafer
- Patent number 9,171,737
- Issue date Oct 27, 2015
- SHIH-ETSU HANDOTAL CO., LTD.
- Hiroyuki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI (silicon on insulator) structure semiconductor device and metho...
- Patent number 8,410,573
- Issue date Apr 2, 2013
- Denso Corporation
- Hiroshi Ohtsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing SOI wafer
- Patent number 8,268,705
- Issue date Sep 18, 2012
- Shin-Etsu Handotai Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating SOI wafer
- Patent number 8,089,274
- Issue date Jan 3, 2012
- Shin-Etsu Handotai Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite integrated semiconductor device
- Patent number 7,948,725
- Issue date May 24, 2011
- Fuji Electric Systems Co., Ltd.
- Shin Kiuchi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for producing SOI wafer
- Patent number 7,910,455
- Issue date Mar 22, 2011
- Shin-Etsu Handotai Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power semiconductor device having a schottky barrier diode
- Patent number 7,476,935
- Issue date Jan 13, 2009
- Fuji Electric Co., Ltd.
- Naoki Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite integrated semiconductor device
- Patent number 7,352,548
- Issue date Apr 1, 2008
- Fuji Electric Co., Ltd.
- Shin Kiuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a lateral MOSFET and combined IC using...
- Patent number 7,247,923
- Issue date Jul 24, 2007
- Fuji Electric Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen sensor for use in battery overcharge/overdischarge detecto...
- Patent number 7,087,151
- Issue date Aug 8, 2006
- Denso Corporation
- Keigo Mizutani
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device having a lateral MOSFET and combined IC using...
- Patent number 6,977,425
- Issue date Dec 20, 2005
- Fuji Electric Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power semiconductor device having a Schottky barrier diode
- Patent number 6,870,223
- Issue date Mar 22, 2005
- Fuji Electric Co., Ltd.
- Naoki Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion type MOS semiconductor device and MOS power IC
- Patent number 6,528,826
- Issue date Mar 4, 2003
- Fuji Electric Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS type semiconductor apparatus
- Patent number 6,462,382
- Issue date Oct 8, 2002
- Fuji Electric Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion type MOS semiconductor device and MOS power IC
- Patent number 6,268,628
- Issue date Jul 31, 2001
- Fuji Electric Co., Ltd.
- Kazuhiko Yoshida
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
MOS type semiconductor apparatus
- Patent number 6,229,180
- Issue date May 8, 2001
- Fuji Electric Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device
- Patent number 5,828,081
- Issue date Oct 27, 1998
- Fuji Electric Co., Ltd.
- Kazuhiko Yoshida
- G01 - MEASURING TESTING
Information Patent Grant
Gate drive circuit having reduced current-consumption and rapid ind...
- Patent number 5,811,996
- Issue date Sep 22, 1998
- Fuji Electric Co., Ltd.
- Kazunori Oyabe
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Over-current protection apparatus for transistor
- Patent number 5,621,601
- Issue date Apr 15, 1997
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Constant current circuit
- Patent number 5,587,655
- Issue date Dec 24, 1996
- Fuji Electric Co., Ltd.
- Kazunori Oyabe
- G05 - CONTROLLING REGULATING

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR...
- Publication number 20230154748
- Publication date May 18, 2023
- Shin-Etsu Handotai Co., Ltd.
- Miho NIITANI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING BONDED SOI WAFER AND BONDED SOI WAFER
- Publication number 20210249301
- Publication date Aug 12, 2021
- Shin-Etsu Handotai Co., Ltd.
- Toshikazu IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER
- Publication number 20130178071
- Publication date Jul 11, 2013
- Shin-Etsu Handotai Co., Ltd.
- Hiroyuki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI (SILICON ON INSULATOR) STRUCTURE SEMICONDUCTOR DEVICE AND METHO...
- Publication number 20100264510
- Publication date Oct 21, 2010
- Denso Corporation
- Hiroshi Ohtsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for evaluating semiconductor wafer
- Publication number 20100022038
- Publication date Jan 28, 2010
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi Ohtsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Soi Wafer
- Publication number 20090280620
- Publication date Nov 12, 2009
- Shin-Etsu Handotai Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Evaluating Soi Wafer
- Publication number 20090251135
- Publication date Oct 8, 2009
- Shin-Etsu Handotai Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Soi Wafer
- Publication number 20090104752
- Publication date Apr 23, 2009
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite integrated semiconductor device
- Publication number 20080285188
- Publication date Nov 20, 2008
- Shin Kiuchi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Composite integrated semiconductor device
- Publication number 20070285855
- Publication date Dec 13, 2007
- FUJI ELECRIC CO., LTD.
- Shin Kiuchi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device having a lateral MOSFET and combined IC using...
- Publication number 20060022265
- Publication date Feb 2, 2006
- Fuji Electric Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High power semiconductor device having a schottky barrier diode
- Publication number 20050145975
- Publication date Jul 7, 2005
- Fuji Electric Co., Ltd.
- Naoki Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and combined IC using the same
- Publication number 20040026728
- Publication date Feb 12, 2004
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen sensor for use in battery overcharge/overdischarge detecto...
- Publication number 20030168337
- Publication date Sep 11, 2003
- DENSO Corporation
- Keigo Mizutani
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Semiconductor device
- Publication number 20030127687
- Publication date Jul 10, 2003
- Naoki Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite integrated semiconductor device
- Publication number 20030063503
- Publication date Apr 3, 2003
- Fuji Electric Co., Ltd.
- Shin Kiuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depletion type MOS semiconductor device and MOS power IC
- Publication number 20010042886
- Publication date Nov 22, 2001
- Fuji Electric, Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS type semiconductor apparatus
- Publication number 20010010379
- Publication date Aug 2, 2001
- Fuji Electric, Co., Ltd.
- Kazuhiko Yoshida
- H01 - BASIC ELECTRIC ELEMENTS

Kazuhiko Yoshida

Person

Patents Grantslast 30 patents

Method for manufacturing bonded SOI wafer and bonded SOI wafer

Thermal oxide film formation method for silicon single crystal wafer

SOI (silicon on insulator) structure semiconductor device and metho...

Method for producing SOI wafer

Method for evaluating SOI wafer

Composite integrated semiconductor device

Method for producing SOI wafer

High power semiconductor device having a schottky barrier diode

Composite integrated semiconductor device

Semiconductor device having a lateral MOSFET and combined IC using...

Hydrogen sensor for use in battery overcharge/overdischarge detecto...

Semiconductor device having a lateral MOSFET and combined IC using...

High power semiconductor device having a Schottky barrier diode

Depletion type MOS semiconductor device and MOS power IC

MOS type semiconductor apparatus

Depletion type MOS semiconductor device and MOS power IC

MOS type semiconductor apparatus

Integrated semiconductor device

Gate drive circuit having reduced current-consumption and rapid ind...

Over-current protection apparatus for transistor

Constant current circuit

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR...

METHOD FOR MANUFACTURING BONDED SOI WAFER AND BONDED SOI WAFER

THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER

SOI (SILICON ON INSULATOR) STRUCTURE SEMICONDUCTOR DEVICE AND METHO...

Method for evaluating semiconductor wafer

Method for Producing Soi Wafer

Method for Evaluating Soi Wafer

Method for Producing Soi Wafer

Composite integrated semiconductor device

Composite integrated semiconductor device

Semiconductor device having a lateral MOSFET and combined IC using...

High power semiconductor device having a schottky barrier diode

Semiconductor device and combined IC using the same

Hydrogen sensor for use in battery overcharge/overdischarge detecto...

Semiconductor device

Composite integrated semiconductor device

Depletion type MOS semiconductor device and MOS power IC

MOS type semiconductor apparatus